The title compound {4-[2-（9-hexyl-9H-carbazol-3-yl）vinyl]phenyl} dimethylamine has been synthesized by the well known Wittig reaction, and its crystal structure was determined by single-crystal X-ray diffraction ana...The title compound {4-[2-（9-hexyl-9H-carbazol-3-yl）vinyl]phenyl} dimethylamine has been synthesized by the well known Wittig reaction, and its crystal structure was determined by single-crystal X-ray diffraction analysis. It crystallizes in monoclinic, space group P21/c with a = 47.87（2）, b = 10.222（4）, c = 9.612（4）A, β = 92.401（9）°, V = 4699（3）A^3, Z = 8, C28H32N2, Mr = 396.56, Dc = 1.121 g/cm^3, F（000） = 1712 and μ（MoKa） = 0.065 mm^-1. The final R and wR are 0.0793 and 0.1983, respectively for 3524 observed reflections with Ⅰ〉 2σ（Ⅰ）. In the title compound, the bond lengths are normal, and the crystal is stabilized by Van der Waals＇ forces.展开更多
We demonstrate a ridge waveguide sampled-grating distributed-feedback laser with quasi-continuous wavelength coverage over a 35nm range. The design is based on a 320nm-thick butt jointed passive waveguide optimized fo...We demonstrate a ridge waveguide sampled-grating distributed-feedback laser with quasi-continuous wavelength coverage over a 35nm range. The design is based on a 320nm-thick butt jointed passive waveguide optimized for carrier injection tuning. The butt-joint technology enable optimize the passive waveguide as well as active section. By tuning mirror sections,the laser provides 35nm tuning while maintaining 〉30dB sidemode suppression ratio.展开更多
In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well （MQW） ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of...In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well （MQW） ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide （RM-RWG） structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80℃, respectively.展开更多
文摘The title compound {4-[2-（9-hexyl-9H-carbazol-3-yl）vinyl]phenyl} dimethylamine has been synthesized by the well known Wittig reaction, and its crystal structure was determined by single-crystal X-ray diffraction analysis. It crystallizes in monoclinic, space group P21/c with a = 47.87（2）, b = 10.222（4）, c = 9.612（4）A, β = 92.401（9）°, V = 4699（3）A^3, Z = 8, C28H32N2, Mr = 396.56, Dc = 1.121 g/cm^3, F（000） = 1712 and μ（MoKa） = 0.065 mm^-1. The final R and wR are 0.0793 and 0.1983, respectively for 3524 observed reflections with Ⅰ〉 2σ（Ⅰ）. In the title compound, the bond lengths are normal, and the crystal is stabilized by Van der Waals＇ forces.
基金supported by the National High Technology Research and Development Programof China(No.2006AA03Z427)the State Key Development Programfor Basic Research of China(No.2003CB314903)the National Natural Science Foundation of China(No.60677024)~~
文摘We demonstrate a ridge waveguide sampled-grating distributed-feedback laser with quasi-continuous wavelength coverage over a 35nm range. The design is based on a 320nm-thick butt jointed passive waveguide optimized for carrier injection tuning. The butt-joint technology enable optimize the passive waveguide as well as active section. By tuning mirror sections,the laser provides 35nm tuning while maintaining 〉30dB sidemode suppression ratio.
基金This work was supported by the National "863" Pro-gram of China (No. 2002AA312171) and the National"973" Program of China (No. 2003CB314903)
文摘In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well （MQW） ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide （RM-RWG） structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80℃, respectively.
