In intracavitary radiotherapy (ICRT) for cancer cervix, applicator geometry has the potential to impact the doses to organs at risk (OARs) and the coverage of the target volume. At our centre two Varian made Fletcher-...In intracavitary radiotherapy (ICRT) for cancer cervix, applicator geometry has the potential to impact the doses to organs at risk (OARs) and the coverage of the target volume. At our centre two Varian made Fletcher-style applicator sets, namely defined (fixed) geometry and flexible geometry, are used for ICRT. In the present work, the two types of applicators were compared dosimetrically as per the recommendations of the International Commission on Radiation Units and Measurements (ICRU-38) while delivering high dose rate brachytherapy. Twenty four patients who underwent ICRT were considered for this study. Radiographic method was used for treatment planning on Abacus planning system. ICRU-38 recommended parameters were estimated and compared. Flexible geometry applicator showed 8.8% and 16% higher bladder and rectum point doses as compared to the fixed geometry one but the difference was statistically not significant. The thickness of the pear-shaped isodose volume was larger for the flexible geometry implant also indicating towards higher doses to OARs. The higher bladder and rectum point doses in the case of flexible applicator will need to be validated by a larger data set.展开更多
The use of Internet of Things(IoT)applications become dominant in many systems.Its on-chip data processing and computations are also increasing consistently.The battery enabled and low leakage memory system at subthre...The use of Internet of Things(IoT)applications become dominant in many systems.Its on-chip data processing and computations are also increasing consistently.The battery enabled and low leakage memory system at subthreshold regime is a critical requirement for these IoT applications.The cache memory designed on Static Random-Access Memory(SRAM)cell with features such as low power,high speed,and process tolerance are highly important for the IoT memory system.Therefore,a process tolerant SRAM cell with low power,improved delay and better stability is presented in this research paper.The proposed cell comprises 11 transistors designed with symmetric approach for write operations and single ended circuit for read operations that exhibits an average dynamic power saving of 43.55%and 47.75%for write and 35.59%and 36.56%for read operations compared to 6 T and 8 T SRAM cells.The cell shows an improved write delay of 26.46%and 37.16%over 6 T and 8T and read delay is lowered by 50.64%and 72.90%against 6 T and 10 T cells.The symmetric design used in core latch to improve the write noise margin(WNM)by 17.78%and 6.67%whereas the single ended separate read circuit improves the Read Static Noise Margin(RSNM)by 1.88x and 0.33x compared to 6 T and 8T cells.The read power delay product and write power delay product are lower by 1.94x,1.39x and 0.17x,2.02x than 6 T and 8 T cells respectively.The lower variability from 5000 samples validates the robustness of the proposed cell.The simulations are carried out in Cadence virtuoso simulator tool with Generic Process Design Kit(GPDK)45 nm technology file in this work.展开更多
文摘In intracavitary radiotherapy (ICRT) for cancer cervix, applicator geometry has the potential to impact the doses to organs at risk (OARs) and the coverage of the target volume. At our centre two Varian made Fletcher-style applicator sets, namely defined (fixed) geometry and flexible geometry, are used for ICRT. In the present work, the two types of applicators were compared dosimetrically as per the recommendations of the International Commission on Radiation Units and Measurements (ICRU-38) while delivering high dose rate brachytherapy. Twenty four patients who underwent ICRT were considered for this study. Radiographic method was used for treatment planning on Abacus planning system. ICRU-38 recommended parameters were estimated and compared. Flexible geometry applicator showed 8.8% and 16% higher bladder and rectum point doses as compared to the fixed geometry one but the difference was statistically not significant. The thickness of the pear-shaped isodose volume was larger for the flexible geometry implant also indicating towards higher doses to OARs. The higher bladder and rectum point doses in the case of flexible applicator will need to be validated by a larger data set.
文摘The use of Internet of Things(IoT)applications become dominant in many systems.Its on-chip data processing and computations are also increasing consistently.The battery enabled and low leakage memory system at subthreshold regime is a critical requirement for these IoT applications.The cache memory designed on Static Random-Access Memory(SRAM)cell with features such as low power,high speed,and process tolerance are highly important for the IoT memory system.Therefore,a process tolerant SRAM cell with low power,improved delay and better stability is presented in this research paper.The proposed cell comprises 11 transistors designed with symmetric approach for write operations and single ended circuit for read operations that exhibits an average dynamic power saving of 43.55%and 47.75%for write and 35.59%and 36.56%for read operations compared to 6 T and 8 T SRAM cells.The cell shows an improved write delay of 26.46%and 37.16%over 6 T and 8T and read delay is lowered by 50.64%and 72.90%against 6 T and 10 T cells.The symmetric design used in core latch to improve the write noise margin(WNM)by 17.78%and 6.67%whereas the single ended separate read circuit improves the Read Static Noise Margin(RSNM)by 1.88x and 0.33x compared to 6 T and 8T cells.The read power delay product and write power delay product are lower by 1.94x,1.39x and 0.17x,2.02x than 6 T and 8 T cells respectively.The lower variability from 5000 samples validates the robustness of the proposed cell.The simulations are carried out in Cadence virtuoso simulator tool with Generic Process Design Kit(GPDK)45 nm technology file in this work.
