The (60 - x) Bi2O3-xGeO2-30B2O3-10ZnO (x = 5, 10, 20, 30 molar percent) glasses doped with Er^3+ and Er^3+/Yb^3+ were fabricated by melting method. The thermal stability of the glasses was studied by their DTA ...The (60 - x) Bi2O3-xGeO2-30B2O3-10ZnO (x = 5, 10, 20, 30 molar percent) glasses doped with Er^3+ and Er^3+/Yb^3+ were fabricated by melting method. The thermal stability of the glasses was studied by their DTA curves. The results indicate that the difference between the glass transition temperature and the crystallization onset temperature increase as increase of GeO2 content, indicating that the thermal stability of the glass becomes better. The absorption spectra were recorded. The stimulated emission cross sections were calculated by McCumber theory. The Ω2, Ω4, and Ω6 parameters, transition probability, radiative lifetime, fluorescence branch ratio of Er^3+ for optical transition were calculated from their absorption spectra in terms of reduced matrix U^(1)(λ = 2, 4, 6) character for optical transitions. The infrared emission was measured by excitation with 970 nm light and the FWHM was estimated from their emission spectra. The pumping efficiency and the intensity of emission at the band of 1.54 μm are enhanced greatly by addition of Y2O3.展开更多
采用磁控溅射法制备不同含量Er掺杂Sb_(2)Te_(3)硫系相变存储薄膜,并利用原子力显微镜、X射线衍射仪、X射线光电子能谱仪、分光光度计、红外椭圆偏振仪等对其形貌、结构、电学性能、光学性能等进行表征分析.结果表明:Er掺杂可以有效抑制...采用磁控溅射法制备不同含量Er掺杂Sb_(2)Te_(3)硫系相变存储薄膜,并利用原子力显微镜、X射线衍射仪、X射线光电子能谱仪、分光光度计、红外椭圆偏振仪等对其形貌、结构、电学性能、光学性能等进行表征分析.结果表明:Er掺杂可以有效抑制Sb_(2)Te_(3)结晶生长、减小晶粒尺寸,从而显著增加结晶温度、降低电阻漂移系数(从0.01590降至0.00241),提升该相变存储薄膜整体的非晶态热稳定性.此外,随着Er掺杂含量的增加,Sb_(2)Te_(3)薄膜的短波截止吸收边出现蓝移,其光学带隙从1.40 e V分别提升至1.76 e V和1.94 e V,同时其红外波段的折射率明显降低.X射线衍射数据证实:Er掺杂会细化晶粒,引起Sb_(2)Te_(3)结晶相发生晶格畸变;X射线光电子能谱分析发现:相变性能提升的内在原因是高含量Er掺杂引起高结合能的Er-Te成键,表明Er掺杂有助于提高Sb_(2)Te_(3)相变材料在光电存储器件中的数据存储可靠性.这可为相变存储器用于大规模神经形态计算的下一代存算一体技术提供材料支撑.展开更多
文摘The (60 - x) Bi2O3-xGeO2-30B2O3-10ZnO (x = 5, 10, 20, 30 molar percent) glasses doped with Er^3+ and Er^3+/Yb^3+ were fabricated by melting method. The thermal stability of the glasses was studied by their DTA curves. The results indicate that the difference between the glass transition temperature and the crystallization onset temperature increase as increase of GeO2 content, indicating that the thermal stability of the glass becomes better. The absorption spectra were recorded. The stimulated emission cross sections were calculated by McCumber theory. The Ω2, Ω4, and Ω6 parameters, transition probability, radiative lifetime, fluorescence branch ratio of Er^3+ for optical transition were calculated from their absorption spectra in terms of reduced matrix U^(1)(λ = 2, 4, 6) character for optical transitions. The infrared emission was measured by excitation with 970 nm light and the FWHM was estimated from their emission spectra. The pumping efficiency and the intensity of emission at the band of 1.54 μm are enhanced greatly by addition of Y2O3.
文摘采用磁控溅射法制备不同含量Er掺杂Sb_(2)Te_(3)硫系相变存储薄膜,并利用原子力显微镜、X射线衍射仪、X射线光电子能谱仪、分光光度计、红外椭圆偏振仪等对其形貌、结构、电学性能、光学性能等进行表征分析.结果表明:Er掺杂可以有效抑制Sb_(2)Te_(3)结晶生长、减小晶粒尺寸,从而显著增加结晶温度、降低电阻漂移系数(从0.01590降至0.00241),提升该相变存储薄膜整体的非晶态热稳定性.此外,随着Er掺杂含量的增加,Sb_(2)Te_(3)薄膜的短波截止吸收边出现蓝移,其光学带隙从1.40 e V分别提升至1.76 e V和1.94 e V,同时其红外波段的折射率明显降低.X射线衍射数据证实:Er掺杂会细化晶粒,引起Sb_(2)Te_(3)结晶相发生晶格畸变;X射线光电子能谱分析发现:相变性能提升的内在原因是高含量Er掺杂引起高结合能的Er-Te成键,表明Er掺杂有助于提高Sb_(2)Te_(3)相变材料在光电存储器件中的数据存储可靠性.这可为相变存储器用于大规模神经形态计算的下一代存算一体技术提供材料支撑.