The use of Internet of Things(IoT)applications become dominant in many systems.Its on-chip data processing and computations are also increasing consistently.The battery enabled and low leakage memory system at subthre...The use of Internet of Things(IoT)applications become dominant in many systems.Its on-chip data processing and computations are also increasing consistently.The battery enabled and low leakage memory system at subthreshold regime is a critical requirement for these IoT applications.The cache memory designed on Static Random-Access Memory(SRAM)cell with features such as low power,high speed,and process tolerance are highly important for the IoT memory system.Therefore,a process tolerant SRAM cell with low power,improved delay and better stability is presented in this research paper.The proposed cell comprises 11 transistors designed with symmetric approach for write operations and single ended circuit for read operations that exhibits an average dynamic power saving of 43.55%and 47.75%for write and 35.59%and 36.56%for read operations compared to 6 T and 8 T SRAM cells.The cell shows an improved write delay of 26.46%and 37.16%over 6 T and 8T and read delay is lowered by 50.64%and 72.90%against 6 T and 10 T cells.The symmetric design used in core latch to improve the write noise margin(WNM)by 17.78%and 6.67%whereas the single ended separate read circuit improves the Read Static Noise Margin(RSNM)by 1.88x and 0.33x compared to 6 T and 8T cells.The read power delay product and write power delay product are lower by 1.94x,1.39x and 0.17x,2.02x than 6 T and 8 T cells respectively.The lower variability from 5000 samples validates the robustness of the proposed cell.The simulations are carried out in Cadence virtuoso simulator tool with Generic Process Design Kit(GPDK)45 nm technology file in this work.展开更多
以大学英语6级和4级考试的成绩以及平时的写作成绩为依据来筛选优秀语言学习者(Good Lan guage Learners,简称GLL)和语言学习欠成功者(Unsuccessful Language Learners,简称ULL,)。按照Oxford 学习策略的分类,把写作策略分为6大类,用一...以大学英语6级和4级考试的成绩以及平时的写作成绩为依据来筛选优秀语言学习者(Good Lan guage Learners,简称GLL)和语言学习欠成功者(Unsuccessful Language Learners,简称ULL,)。按照Oxford 学习策略的分类,把写作策略分为6大类,用一般描述性统计分析来检测两组学生在这6 类写作策略运用上的差异,并用此统计方法分析大学英语学习者有哪些策略喜好;也用多元回归方法分析写作策略对写作成绩的预测能力,旨在发现写作策略与写作成效的关系。展开更多
文摘The use of Internet of Things(IoT)applications become dominant in many systems.Its on-chip data processing and computations are also increasing consistently.The battery enabled and low leakage memory system at subthreshold regime is a critical requirement for these IoT applications.The cache memory designed on Static Random-Access Memory(SRAM)cell with features such as low power,high speed,and process tolerance are highly important for the IoT memory system.Therefore,a process tolerant SRAM cell with low power,improved delay and better stability is presented in this research paper.The proposed cell comprises 11 transistors designed with symmetric approach for write operations and single ended circuit for read operations that exhibits an average dynamic power saving of 43.55%and 47.75%for write and 35.59%and 36.56%for read operations compared to 6 T and 8 T SRAM cells.The cell shows an improved write delay of 26.46%and 37.16%over 6 T and 8T and read delay is lowered by 50.64%and 72.90%against 6 T and 10 T cells.The symmetric design used in core latch to improve the write noise margin(WNM)by 17.78%and 6.67%whereas the single ended separate read circuit improves the Read Static Noise Margin(RSNM)by 1.88x and 0.33x compared to 6 T and 8T cells.The read power delay product and write power delay product are lower by 1.94x,1.39x and 0.17x,2.02x than 6 T and 8 T cells respectively.The lower variability from 5000 samples validates the robustness of the proposed cell.The simulations are carried out in Cadence virtuoso simulator tool with Generic Process Design Kit(GPDK)45 nm technology file in this work.
文摘以大学英语6级和4级考试的成绩以及平时的写作成绩为依据来筛选优秀语言学习者(Good Lan guage Learners,简称GLL)和语言学习欠成功者(Unsuccessful Language Learners,简称ULL,)。按照Oxford 学习策略的分类,把写作策略分为6大类,用一般描述性统计分析来检测两组学生在这6 类写作策略运用上的差异,并用此统计方法分析大学英语学习者有哪些策略喜好;也用多元回归方法分析写作策略对写作成绩的预测能力,旨在发现写作策略与写作成效的关系。
