High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achiev...High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achieving an extremely low energy threshold.In this study,first-principles simulations,passivation film preparation,and metal oxide semiconductor(MOS)capacitor characterization were combined to study surface passivation.Theoretical calculations of the energy band structure of the -H,-OH,and -NH_(2) passivation groups on the surface of Ge were performed,and the interface state density and potential with five different passivation groups with N/O atomic ratios were accurately analyzed to obtain a stable surface state.Based on the theoretical calculation results,the surface passivation layers of the Ge_(2)ON_(2) film were prepared via magnetron sputtering in accordance with the optimum atomic ratio structure.The microstructure,C-V,and I-V electrical properties of the layers,and the passivation effect of the Al/Ge_(2)ON_(2)/Ge MOS were characterized to test the interface state density.The mean interface state density obtained by the Terman method was 8.4×10^(11) cm^(-2) eV^(-1).The processing of germanium oxynitrogen passivation films is expected to be used in direct dark matter detection of the HPGe detector surface passivation technology to reduce the detector leakage currents.展开更多
提出了一种无监督的两阶段聚类算法TPC(Two-Phase Clustering Algorithm)用于识别DoS(denial of service)/DDoS(distributed denial of service)攻击流数据,算法第一阶段根据样本的距离相似性计算密度区域和稀疏区域,利用密度连接的概...提出了一种无监督的两阶段聚类算法TPC(Two-Phase Clustering Algorithm)用于识别DoS(denial of service)/DDoS(distributed denial of service)攻击流数据,算法第一阶段根据样本的距离相似性计算密度区域和稀疏区域,利用密度连接的概念对样本集进行初步聚合,第二阶段利用聚类内部的散布程度和样本平均距离来表示计算聚类之间的相似性,对性质相似的聚类进一步递归聚合.算法不仅够识别不规则形状的聚类,还能识别对不同密度的聚类,解决了密度聚类算法需要设置合适的全局参数的弊端.展开更多
无线网络由于其传输介质及通信规程的特殊性,除了要面对有线网络中存在的各种拒绝服务(denial of service,DoS)攻击之外,还面临着一些在无线环境下特有的DoS攻击。针对由伪造协议会话中使用的管理帧和EAP帧发起的DoS攻击,提出了一种基...无线网络由于其传输介质及通信规程的特殊性,除了要面对有线网络中存在的各种拒绝服务(denial of service,DoS)攻击之外,还面临着一些在无线环境下特有的DoS攻击。针对由伪造协议会话中使用的管理帧和EAP帧发起的DoS攻击,提出了一种基于规范的自适应检测方法(WSBA),为无线局域网所执行的安全协议建立在正常运行时的状态转移模型连同网络安全策略约束定义作为检测规范,作为检测此类DoS攻击的依据。给出了检测阈值的自适应调整算法,分析了算法参数设置对检测性能的影响。实验测试结果表明该方法是正确而有效的。展开更多
This review article commences with a comprehensive historical review of the evolution and application of various density surfaces in atmospheric and oceanic studies. The background provides a basis for the birth of th...This review article commences with a comprehensive historical review of the evolution and application of various density surfaces in atmospheric and oceanic studies. The background provides a basis for the birth of the neutral density idea. Attention is paid to the development of the neutral density surface concept from the nonlinearity of the equation of state of seawater. The definition and properties of neutral density surface are described in detail as developed from the equations of state of seawater and the buoyancy frequency when the squared buoyancy frequency N2 is zero, a neutral state of stability. In order to apply the neutral density surface to intermediate water-mass analysis, this review also describes in detail its practical oceanographic application. The mapping technique is focused for the first time on applying regularly gridded data in this review. It is reviewed how a backbone and ribs framework was designed to flesh out from a reference cast and first mapped the global neutral surfaces in the world’s oceans. Several mapped neutral density surfaces are presented as examples for each world ocean. The water-mass property is analyzed in each ocean at mid-depth. The characteristics of neutral density surfaces are compared with those of potential density surfaces.展开更多
Condense matter methods and mathematical models used in solving problems in solid state physics are transformed to high energy quantum cosmology in order to estimate the magnitude of the missing dark energy of the uni...Condense matter methods and mathematical models used in solving problems in solid state physics are transformed to high energy quantum cosmology in order to estimate the magnitude of the missing dark energy of the universe. Looking at the problem from this novel viewpoint was rewarded by a rather unexpected result, namely that the gap labelling method of integrated density of states for three dimensional icosahedral quasicrystals is identical to the previously measured and theoretically concluded ordinary energy density of the universe, namely a mere 4.5 percent of Einstein’s energy density, i.e. E(O) = mc2/22 where E is the energy, m is the mass and c is the speed of light. Consequently we conclude that the missing dark energy density must be E(D) = 1 - E(O) = mc2(21/22) in agreement with all known cosmological measurements and observations. This result could also be interpreted as a strong evidence for the self similarity of the geometry of spacetime, which is an expression of its basic fractal nature.展开更多
The dependences of Fermi-level pinning on interface state densities for the metal-dielectric, ploycrystalline silicon-dielectric, and metal silicide-dielectric interfaces are investigated by calculating their effectiv...The dependences of Fermi-level pinning on interface state densities for the metal-dielectric, ploycrystalline silicon-dielectric, and metal silicide-dielectric interfaces are investigated by calculating their effective work functions and their pinning factors. The Fermi-level pinning factors and effective work functions of the metal-dielectric interface are observed to be more susceptible to the increasing interface state densities, differing significantly from that of the ploycrystalline silicon-dielectric interface and the metal silicide-dielectric interface. The calculation results indicate that metal silicide gates with high-temperature resistance and low resistivity are a more promising choice for the design of gate materials in metal-oxide semiconductor（MOS） technology.展开更多
The local density of photonic states （LDPS） of an infinite two-dimensional （2D） photonic crystal （PC） composed of rotated square-pillars in a 2D square lattice is calculated in terms of the plane-wave expansion ...The local density of photonic states （LDPS） of an infinite two-dimensional （2D） photonic crystal （PC） composed of rotated square-pillars in a 2D square lattice is calculated in terms of the plane-wave expansion method in a combination with the point group theory. The calculation results show that the LDPS strongly depends on the spatial positions. The variations of the LDPS as functions of the radial coordinate and frequency exhibit “mountain chain” structures with sharp peaks. The LDPS with large value spans a finite area and falls abruptly down to small value at the position corresponding to the interfaces between two different refractive index materials. The larger/lower LDPS occurs inward the lower/larger dielectric-constant medium. This feature can be well interpreted by the continuity of electricdisplacement vector at the interface. In the frequency range of the pseudo-PBG （photonic band gap）, the LDPS keeps very low value over the whole Wiger-Seitz cell. It indicates that the spontaneous emission in 2D PCs cannot be prohibited completely, but it can be inhibited intensively when the resonate frequency falls into the pseudo-PBG.展开更多
The analytical expression of the electronic density of states (DOS) for single-walled carbon nanotubes (SWNTs) has been derived on the basis of graphene approximation of the energy E(k) near the Fermi level EF. The di...The analytical expression of the electronic density of states (DOS) for single-walled carbon nanotubes (SWNTs) has been derived on the basis of graphene approximation of the energy E(k) near the Fermi level EF. The distinctive properties of the DOS, the normalized differential conductivity and the current us bias for SWNTs are deduced and analyzed theoretically. The singularities in the DOS (or in the normalized differential conductivity) predict that the jump structure of current (or conductance)-bias of SWNTs exists. All conclusions from the theoretical analysis are in well agreement with the experimental results of SWNT's electronic structure and electronic transport. In other words, the simple theoretical model in this paper can be applied to understand a range of spectroscopic and other measurement data related to the DOS of SWNTs.展开更多
The particle Probability Hypotheses Density (particle-PHD) filter is a tractable approach for Random Finite Set (RFS) Bayes estimation, but the particle-PHD filter can not directly derive the target track. Most existi...The particle Probability Hypotheses Density (particle-PHD) filter is a tractable approach for Random Finite Set (RFS) Bayes estimation, but the particle-PHD filter can not directly derive the target track. Most existing approaches combine the data association step to solve this problem. This paper proposes an algorithm which does not need the association step. Our basic ideal is based on the clustering algorithm of Finite Mixture Models (FMM). The intensity distribution is first derived by the particle-PHD filter, and then the clustering algorithm is applied to estimate the multitarget states and tracks jointly. The clustering process includes two steps: the prediction and update. The key to the proposed algorithm is to use the prediction as the initial points and the convergent points as the es- timates. Besides, Expectation-Maximization (EM) and Markov Chain Monte Carlo (MCMC) ap- proaches are used for the FMM parameter estimation.展开更多
We show that the Wigner function (an ensemble average of the density operator ρ, Δ is the Wigner operator) can be expressed as a matrix element of ρ in the entangled pure states. In doing so, converting from quant...We show that the Wigner function (an ensemble average of the density operator ρ, Δ is the Wigner operator) can be expressed as a matrix element of ρ in the entangled pure states. In doing so, converting from quantum master equations to time-evolution equation of the Wigner functions seems direct and concise. The entangled states are defined in the enlarged Fock space with a fictitious freedom.展开更多
The recently reported quasi-nonvolatile memory based on semi-floating gate architecture has attracted extensive attention thanks to its potential to bridge the large gap between volatile and nonvolatile memory.However...The recently reported quasi-nonvolatile memory based on semi-floating gate architecture has attracted extensive attention thanks to its potential to bridge the large gap between volatile and nonvolatile memory.However,the further extension of the refresh time in quasi-nonvolatile memory is limited by the charge leakage through the p-n junction.Here,based on the density of states engineered van der Waals heterostructures,the leakage of electrons from the floating gate to the channel is greatly suppressed.As a result,the refresh time is effectively extended to more than 100 s,which is the longest among all previously reported quasi-nonvolatile memories.This work provides a new idea to enhance the refresh time of quasi-nonvolatile memory by the density of states engineering and demonstrates great application potential for high-speed and low-power memory technology.展开更多
The structural features and three-dimensional nature of the charge density wave （CDW） state of the layered chalcogenide 1T-TaSe2-xTex （0≤x≤2.0） are characterized by Cs-corrected transmission electron microscopy ...The structural features and three-dimensional nature of the charge density wave （CDW） state of the layered chalcogenide 1T-TaSe2-xTex （0≤x≤2.0） are characterized by Cs-corrected transmission electron microscopy measurements. Notable changes of both average structure and the CDW state arising from Te substitution for Se are clearly demonstrated in samples with x〉0.3. The commensurate CDW state characterized by the known star-of-David clustering in the 1T-TaSe2 crystal becomes visibly unstable with Te substitution and vanishes when x=0.3. The 1T-TaSe2-xTex （0.3≤x≤1.3） samples generally adopt a remarkable incommensurate CDW state with monoclinic distortion, which could be fundamentally in correlation with the strong qq-dependent electron-phonon coupling-induced period-lattice-distortion as identified in TaTe22. Systematic analysis demonstrates that the occurrence of superconductivity is related to the suppression of the commensurate CDW phase and the presence of discommensuration is an evident structural feature observed in the superconducting samples.展开更多
The electronic band structures, densities of states （DOSs）, and projected densities of states （PDOSs） of the wurtzite In1-xGaxN with x=0, 0.0625, 0.125 are studied using the generalized-gradient approximation （GG...The electronic band structures, densities of states （DOSs）, and projected densities of states （PDOSs） of the wurtzite In1-xGaxN with x=0, 0.0625, 0.125 are studied using the generalized-gradient approximation （GGA） and GGA＋U in density functional theory. Our calculations suggest that in the case of wurtzite InN it is important to apply an on-site Hubbard correction to both the d states of indium and the p states of nitrogen in order to recover the correct energy level symmetry and obtain a reliable description of the InN band structure. The method is used to study the electronic properties of the wurtzite In1-xGaxN. The conduction band minimum （CBM） energy increases, while the valence band maximum （VBM） energy decreases with the increase of the gallium concentration. The effect leads to broadening the band gap （BG） and the valence band width （VBW）. Furthermore, the compressive strain in the crystal can cause the BG and the VBW to increase with the increase of gallium concentrations.展开更多
For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To...For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.展开更多
On the basis of vapor pressures, volumes of saturated vapor and liquid, both parameters "a" and "b" in Soave equation of state are treated as temperature dependent and an extended Soave equation is...On the basis of vapor pressures, volumes of saturated vapor and liquid, both parameters "a" and "b" in Soave equation of state are treated as temperature dependent and an extended Soave equation is proposed in this work. The VLE for 38 pure components including polar substances have been calculated. The comparison of calculated results with experimental data shows the prediction of liquid density is improved over Soave equation without losing the accuracy of prediction in vapor pressure and vapor density.展开更多
Electrode material based on a novel core–shell structure consisting of NiCoS（NCS） solid fiber core and Mn S（MS） sheet shell（NCS@MS） in situ grown on carbon cloth（CC） has been successfully prepared by a simple...Electrode material based on a novel core–shell structure consisting of NiCoS（NCS） solid fiber core and Mn S（MS） sheet shell（NCS@MS） in situ grown on carbon cloth（CC） has been successfully prepared by a simple sulfurization-assisted hydrothermal method for high performance supercapacitor. The synthesized NiCoS@Mn S/CC electrode shows high capacitance of 1908.3 F gat a current density of 0.5 A gwhich is higher than those of NiCoSand Mn S at the same current density. A flexible all-solid-state asymmetric supercapacitor（ASC） is constructed by using NiCoS@Mn S/CC as positive electrode, active carbon/CC as negative electrode and KOH/poly（vinyl alcohol）(PVA) as electrolyte. The optimized ASC shows a maximum energy density of 23.3 Wh kgat 1 A g, a maximum power density of about7.5 kw kgat 10 A gand remarkable cycling stability. After 9000 cycles, the ASC still exhibited67.8% retention rate and largely unchanged charge/discharge curves. The excellent electrochemical properties are resulted from the novel core–shell structure of the NiCoS@Mn S/CC electrode, which possesses both high surface area for Faraday redox reaction and superior kinetics of charge transport. The NiCoS@Mn S/CC electrode shows a promising potential for energy storage applications in the future.展开更多
基金supported by the National Natural Science Foundation of China(No.12005017).
文摘High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achieving an extremely low energy threshold.In this study,first-principles simulations,passivation film preparation,and metal oxide semiconductor(MOS)capacitor characterization were combined to study surface passivation.Theoretical calculations of the energy band structure of the -H,-OH,and -NH_(2) passivation groups on the surface of Ge were performed,and the interface state density and potential with five different passivation groups with N/O atomic ratios were accurately analyzed to obtain a stable surface state.Based on the theoretical calculation results,the surface passivation layers of the Ge_(2)ON_(2) film were prepared via magnetron sputtering in accordance with the optimum atomic ratio structure.The microstructure,C-V,and I-V electrical properties of the layers,and the passivation effect of the Al/Ge_(2)ON_(2)/Ge MOS were characterized to test the interface state density.The mean interface state density obtained by the Terman method was 8.4×10^(11) cm^(-2) eV^(-1).The processing of germanium oxynitrogen passivation films is expected to be used in direct dark matter detection of the HPGe detector surface passivation technology to reduce the detector leakage currents.
文摘提出了一种无监督的两阶段聚类算法TPC(Two-Phase Clustering Algorithm)用于识别DoS(denial of service)/DDoS(distributed denial of service)攻击流数据,算法第一阶段根据样本的距离相似性计算密度区域和稀疏区域,利用密度连接的概念对样本集进行初步聚合,第二阶段利用聚类内部的散布程度和样本平均距离来表示计算聚类之间的相似性,对性质相似的聚类进一步递归聚合.算法不仅够识别不规则形状的聚类,还能识别对不同密度的聚类,解决了密度聚类算法需要设置合适的全局参数的弊端.
文摘无线网络由于其传输介质及通信规程的特殊性,除了要面对有线网络中存在的各种拒绝服务(denial of service,DoS)攻击之外,还面临着一些在无线环境下特有的DoS攻击。针对由伪造协议会话中使用的管理帧和EAP帧发起的DoS攻击,提出了一种基于规范的自适应检测方法(WSBA),为无线局域网所执行的安全协议建立在正常运行时的状态转移模型连同网络安全策略约束定义作为检测规范,作为检测此类DoS攻击的依据。给出了检测阈值的自适应调整算法,分析了算法参数设置对检测性能的影响。实验测试结果表明该方法是正确而有效的。
文摘This review article commences with a comprehensive historical review of the evolution and application of various density surfaces in atmospheric and oceanic studies. The background provides a basis for the birth of the neutral density idea. Attention is paid to the development of the neutral density surface concept from the nonlinearity of the equation of state of seawater. The definition and properties of neutral density surface are described in detail as developed from the equations of state of seawater and the buoyancy frequency when the squared buoyancy frequency N2 is zero, a neutral state of stability. In order to apply the neutral density surface to intermediate water-mass analysis, this review also describes in detail its practical oceanographic application. The mapping technique is focused for the first time on applying regularly gridded data in this review. It is reviewed how a backbone and ribs framework was designed to flesh out from a reference cast and first mapped the global neutral surfaces in the world’s oceans. Several mapped neutral density surfaces are presented as examples for each world ocean. The water-mass property is analyzed in each ocean at mid-depth. The characteristics of neutral density surfaces are compared with those of potential density surfaces.
文摘Condense matter methods and mathematical models used in solving problems in solid state physics are transformed to high energy quantum cosmology in order to estimate the magnitude of the missing dark energy of the universe. Looking at the problem from this novel viewpoint was rewarded by a rather unexpected result, namely that the gap labelling method of integrated density of states for three dimensional icosahedral quasicrystals is identical to the previously measured and theoretically concluded ordinary energy density of the universe, namely a mere 4.5 percent of Einstein’s energy density, i.e. E(O) = mc2/22 where E is the energy, m is the mass and c is the speed of light. Consequently we conclude that the missing dark energy density must be E(D) = 1 - E(O) = mc2(21/22) in agreement with all known cosmological measurements and observations. This result could also be interpreted as a strong evidence for the self similarity of the geometry of spacetime, which is an expression of its basic fractal nature.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61376096,61327813,and 11234007)
文摘The dependences of Fermi-level pinning on interface state densities for the metal-dielectric, ploycrystalline silicon-dielectric, and metal silicide-dielectric interfaces are investigated by calculating their effective work functions and their pinning factors. The Fermi-level pinning factors and effective work functions of the metal-dielectric interface are observed to be more susceptible to the increasing interface state densities, differing significantly from that of the ploycrystalline silicon-dielectric interface and the metal silicide-dielectric interface. The calculation results indicate that metal silicide gates with high-temperature resistance and low resistivity are a more promising choice for the design of gate materials in metal-oxide semiconductor（MOS） technology.
基金Project supported by National Key Basic Research Special Fund of China and by Natural Science Foundation of Beijing, China.
文摘The local density of photonic states （LDPS） of an infinite two-dimensional （2D） photonic crystal （PC） composed of rotated square-pillars in a 2D square lattice is calculated in terms of the plane-wave expansion method in a combination with the point group theory. The calculation results show that the LDPS strongly depends on the spatial positions. The variations of the LDPS as functions of the radial coordinate and frequency exhibit “mountain chain” structures with sharp peaks. The LDPS with large value spans a finite area and falls abruptly down to small value at the position corresponding to the interfaces between two different refractive index materials. The larger/lower LDPS occurs inward the lower/larger dielectric-constant medium. This feature can be well interpreted by the continuity of electricdisplacement vector at the interface. In the frequency range of the pseudo-PBG （photonic band gap）, the LDPS keeps very low value over the whole Wiger-Seitz cell. It indicates that the spontaneous emission in 2D PCs cannot be prohibited completely, but it can be inhibited intensively when the resonate frequency falls into the pseudo-PBG.
基金The work is financially supported by the National Natural Science Foundation of China (No.59972031)and the Scientific Research Fund of Hunan Provincial Education Department (No.01C248). Authors wish to express their sincere appreciation to these sponsors
文摘The analytical expression of the electronic density of states (DOS) for single-walled carbon nanotubes (SWNTs) has been derived on the basis of graphene approximation of the energy E(k) near the Fermi level EF. The distinctive properties of the DOS, the normalized differential conductivity and the current us bias for SWNTs are deduced and analyzed theoretically. The singularities in the DOS (or in the normalized differential conductivity) predict that the jump structure of current (or conductance)-bias of SWNTs exists. All conclusions from the theoretical analysis are in well agreement with the experimental results of SWNT's electronic structure and electronic transport. In other words, the simple theoretical model in this paper can be applied to understand a range of spectroscopic and other measurement data related to the DOS of SWNTs.
基金Supported by the National Key Fundamental Research & Development Program of China (2007CB11006)the Zhejiang Natural Science Foundation (R106745, Y1080422)
文摘The particle Probability Hypotheses Density (particle-PHD) filter is a tractable approach for Random Finite Set (RFS) Bayes estimation, but the particle-PHD filter can not directly derive the target track. Most existing approaches combine the data association step to solve this problem. This paper proposes an algorithm which does not need the association step. Our basic ideal is based on the clustering algorithm of Finite Mixture Models (FMM). The intensity distribution is first derived by the particle-PHD filter, and then the clustering algorithm is applied to estimate the multitarget states and tracks jointly. The clustering process includes two steps: the prediction and update. The key to the proposed algorithm is to use the prediction as the initial points and the convergent points as the es- timates. Besides, Expectation-Maximization (EM) and Markov Chain Monte Carlo (MCMC) ap- proaches are used for the FMM parameter estimation.
文摘We show that the Wigner function (an ensemble average of the density operator ρ, Δ is the Wigner operator) can be expressed as a matrix element of ρ in the entangled pure states. In doing so, converting from quantum master equations to time-evolution equation of the Wigner functions seems direct and concise. The entangled states are defined in the enlarged Fock space with a fictitious freedom.
基金This work was supported by the National Natural Science Foundation of China(61925402,61851402 and 61734003)Science and Technology Commission of Shanghai Municipality(19JC1416600)+2 种基金National Key Research and Development Program(2017YFB0405600)Shanghai Education Development Foundation and Shanghai Municipal Education Commission Shuguang Program(18SG01)China Postdoctoral Science Foundation(2019M661358,2019TQ0065).
文摘The recently reported quasi-nonvolatile memory based on semi-floating gate architecture has attracted extensive attention thanks to its potential to bridge the large gap between volatile and nonvolatile memory.However,the further extension of the refresh time in quasi-nonvolatile memory is limited by the charge leakage through the p-n junction.Here,based on the density of states engineered van der Waals heterostructures,the leakage of electrons from the floating gate to the channel is greatly suppressed.As a result,the refresh time is effectively extended to more than 100 s,which is the longest among all previously reported quasi-nonvolatile memories.This work provides a new idea to enhance the refresh time of quasi-nonvolatile memory by the density of states engineering and demonstrates great application potential for high-speed and low-power memory technology.
基金Supported by the National Basic Research Program of China under Grant Nos 2015CB921300 and 2012CB821404the National Key Research and Development Program of China under Grant Nos 2016YFA0300300 and 2016YFA0300404+1 种基金the National Natural Science Foundation of China under Grant Nos 11474323,11604372,11274368,91221102,11190022,11674326 and 91422303the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB07020000
文摘The structural features and three-dimensional nature of the charge density wave （CDW） state of the layered chalcogenide 1T-TaSe2-xTex （0≤x≤2.0） are characterized by Cs-corrected transmission electron microscopy measurements. Notable changes of both average structure and the CDW state arising from Te substitution for Se are clearly demonstrated in samples with x〉0.3. The commensurate CDW state characterized by the known star-of-David clustering in the 1T-TaSe2 crystal becomes visibly unstable with Te substitution and vanishes when x=0.3. The 1T-TaSe2-xTex （0.3≤x≤1.3） samples generally adopt a remarkable incommensurate CDW state with monoclinic distortion, which could be fundamentally in correlation with the strong qq-dependent electron-phonon coupling-induced period-lattice-distortion as identified in TaTe22. Systematic analysis demonstrates that the occurrence of superconductivity is related to the suppression of the commensurate CDW phase and the presence of discommensuration is an evident structural feature observed in the superconducting samples.
基金Project supported by the National Natural Science Foundation of China(Grant No.50971094)the Natural Science Foundation of Beijing,China(Grant Nos.KZ201310028032 and 1092007)the Domestic Visiting Program for the Graduate Students of Inner Mongolia University,China
文摘The electronic band structures, densities of states （DOSs）, and projected densities of states （PDOSs） of the wurtzite In1-xGaxN with x=0, 0.0625, 0.125 are studied using the generalized-gradient approximation （GGA） and GGA＋U in density functional theory. Our calculations suggest that in the case of wurtzite InN it is important to apply an on-site Hubbard correction to both the d states of indium and the p states of nitrogen in order to recover the correct energy level symmetry and obtain a reliable description of the InN band structure. The method is used to study the electronic properties of the wurtzite In1-xGaxN. The conduction band minimum （CBM） energy increases, while the valence band maximum （VBM） energy decreases with the increase of the gallium concentration. The effect leads to broadening the band gap （BG） and the valence band width （VBW）. Furthermore, the compressive strain in the crystal can cause the BG and the VBW to increase with the increase of gallium concentrations.
基金Supported by the Natural Science Foundation of Jiangxi Province under Grant No 20133ACB20005the Key Program of National Natural Science Foundation of China under Grant No 41330318+3 种基金the Key Program of Science and Technology Research of Ministry of Education under Grant No NRE1515the Foundation of Training Academic and Technical Leaders for Main Majors of Jiangxi Province under Grant No 20142BCB22006the Research Foundation of Education Bureau of Jiangxi Province under Grant No GJJ14501the Engineering Research Center of Nuclear Technology Application(East China Institute of Technology)Ministry of Education under Grant NoHJSJYB2016-1
文摘For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.
文摘On the basis of vapor pressures, volumes of saturated vapor and liquid, both parameters "a" and "b" in Soave equation of state are treated as temperature dependent and an extended Soave equation is proposed in this work. The VLE for 38 pure components including polar substances have been calculated. The comparison of calculated results with experimental data shows the prediction of liquid density is improved over Soave equation without losing the accuracy of prediction in vapor pressure and vapor density.
基金supported by the Grant-in-Aid for Scientific Research (KAKENHI) program, Japan (C, Grant Number 15K05597)Takahashi Industrial and Economic Research Foundation (Takahashi Grant Number 06-003-154)
文摘Electrode material based on a novel core–shell structure consisting of NiCoS（NCS） solid fiber core and Mn S（MS） sheet shell（NCS@MS） in situ grown on carbon cloth（CC） has been successfully prepared by a simple sulfurization-assisted hydrothermal method for high performance supercapacitor. The synthesized NiCoS@Mn S/CC electrode shows high capacitance of 1908.3 F gat a current density of 0.5 A gwhich is higher than those of NiCoSand Mn S at the same current density. A flexible all-solid-state asymmetric supercapacitor（ASC） is constructed by using NiCoS@Mn S/CC as positive electrode, active carbon/CC as negative electrode and KOH/poly（vinyl alcohol）(PVA) as electrolyte. The optimized ASC shows a maximum energy density of 23.3 Wh kgat 1 A g, a maximum power density of about7.5 kw kgat 10 A gand remarkable cycling stability. After 9000 cycles, the ASC still exhibited67.8% retention rate and largely unchanged charge/discharge curves. The excellent electrochemical properties are resulted from the novel core–shell structure of the NiCoS@Mn S/CC electrode, which possesses both high surface area for Faraday redox reaction and superior kinetics of charge transport. The NiCoS@Mn S/CC electrode shows a promising potential for energy storage applications in the future.
