随着大数据应用的涌现,计算机系统需要更大容量的内存以满足大数据处理的高时效性需求.新型非易失性存储器(non-volatile memory,NVM)结合传统动态随机存储器(dynamic random access memory,DRAM)组成的混合内存系统具有内存容量大、功...随着大数据应用的涌现,计算机系统需要更大容量的内存以满足大数据处理的高时效性需求.新型非易失性存储器(non-volatile memory,NVM)结合传统动态随机存储器(dynamic random access memory,DRAM)组成的混合内存系统具有内存容量大、功耗低的优势,因而得到了广泛关注.大数据应用同时也面临着旁路转换缓冲器(translation lookaside buffer,TLB)缺失率过高的性能瓶颈.大页可以有效降低TLB缺失率,然而,在混合内存中支持大页面临着大页迁移开销过大的问题.因此,设计了一种支持大页和大容量缓存的层次化混合内存系统:DRAM和NVM分别使用4KB和2MB粒度的页面分别进行管理,同时在DRAM和NVM之间实现直接映射.设计了基于访存频率的DRAM缓存数据过滤机制,减轻了带宽压力.提出了基于内存实时信息的动态热度阈值调整策略,灵活适应应用访存特征的变化.实验显示:与使用大页的全NVM内存系统和缓存热页(caching hot page,CHOP)系统相比平均有69.9%和15.2%的性能提升,而与使用大页的全DRAM内存系统相比平均只有8.8%的性能差距.展开更多
Based on the idea of optimization design of pile type, the two kinds of the typical pile type are selected, which containing flexibility pile (e.g. rammed cement-soil pile is for short RCSP), and rigid pile (e.g. ceme...Based on the idea of optimization design of pile type, the two kinds of the typical pile type are selected, which containing flexibility pile (e.g. rammed cement-soil pile is for short RCSP), and rigid pile (e.g. cement-flyash-gravel pile is for short CFGP). The three kinds of the composite foundation are designed, which are CFGP, CFG long pile and CFG short pile (for short CFGLP-CFGSP), CFG long-short pile and rammed cement-soil short pile (for short CFGLP-RCSSP). Natural earthquake is simulated by using the engineering blasting;the dynamic characteristics and dynamic response of the composite foundation are studied through field test. CFGLP-RCSSP is closed to linear relation. The bearing capacity of the four composite foundation of the CFGP, CFGLP-CFGSP, and CFGLP-RCSSP in the site are 225 kPa, 179 kPa, and 197 kPa, separately increases 150%, 98.8% and 119% compared to the natural foundation. The vibration main frequency is mainly depended on properties of foundation soil and piles between vibration source and measuring point, pilling load value. Horizontal vibration main frequency greater than the vertical vibration main frequency and the vertical vibration main frequency close to the first-order natural frequency of composite foundation. With the pilling load increasing, the CFGLP-RCSSP pile composite foundation combined frequency decreased. Under the same blast energy, the acceleration peak on the CFG pile composite foundation is less than CFGLP-CFGSP the corresponding values, as the load increases, the peak acceleration gently. CFG pile composite foundation is favorable on seismic. The distribution of peak acceleration is consistent within 4 m from pile top in the CFGLP_RCSSP composite foundation. The maximum of the horizontal acceleration peak along the pile body occurs at a distance of pile top 4 m or the pile top, and that of vertical acceleration peak occurred at a pile top.展开更多
Opening the silicon oxide mask of a capacitor in dynamic random access memory is a critical process on a capacitive coupled plasma(CCP)etch tool.Three steps,dielectric anti-reflective coating(DARC)etch back,silicon ox...Opening the silicon oxide mask of a capacitor in dynamic random access memory is a critical process on a capacitive coupled plasma(CCP)etch tool.Three steps,dielectric anti-reflective coating(DARC)etch back,silicon oxide etch and strip,are contained.To acquire good performance,such as low leakage current and high capacitance,for further fabricating capacitors,we should firstly optimize DARC etch back.We developed some experiments,focusing on etch time and chemistry,to evalu-ate the profile of a silicon oxide mask,DARC remain and critical dimension.The result shows that etch back time should be con-trolled in the range from 50 to 60 s,based on the current equipment and condition.It will make B/T ratio higher than 70%mean-while resolve the DARC remain issue.We also found that CH_(2)F_(2) flow should be~15 sccm to avoid reversed CD trend and keep in-line CD.展开更多
文摘随着大数据应用的涌现,计算机系统需要更大容量的内存以满足大数据处理的高时效性需求.新型非易失性存储器(non-volatile memory,NVM)结合传统动态随机存储器(dynamic random access memory,DRAM)组成的混合内存系统具有内存容量大、功耗低的优势,因而得到了广泛关注.大数据应用同时也面临着旁路转换缓冲器(translation lookaside buffer,TLB)缺失率过高的性能瓶颈.大页可以有效降低TLB缺失率,然而,在混合内存中支持大页面临着大页迁移开销过大的问题.因此,设计了一种支持大页和大容量缓存的层次化混合内存系统:DRAM和NVM分别使用4KB和2MB粒度的页面分别进行管理,同时在DRAM和NVM之间实现直接映射.设计了基于访存频率的DRAM缓存数据过滤机制,减轻了带宽压力.提出了基于内存实时信息的动态热度阈值调整策略,灵活适应应用访存特征的变化.实验显示:与使用大页的全NVM内存系统和缓存热页(caching hot page,CHOP)系统相比平均有69.9%和15.2%的性能提升,而与使用大页的全DRAM内存系统相比平均只有8.8%的性能差距.
文摘Based on the idea of optimization design of pile type, the two kinds of the typical pile type are selected, which containing flexibility pile (e.g. rammed cement-soil pile is for short RCSP), and rigid pile (e.g. cement-flyash-gravel pile is for short CFGP). The three kinds of the composite foundation are designed, which are CFGP, CFG long pile and CFG short pile (for short CFGLP-CFGSP), CFG long-short pile and rammed cement-soil short pile (for short CFGLP-RCSSP). Natural earthquake is simulated by using the engineering blasting;the dynamic characteristics and dynamic response of the composite foundation are studied through field test. CFGLP-RCSSP is closed to linear relation. The bearing capacity of the four composite foundation of the CFGP, CFGLP-CFGSP, and CFGLP-RCSSP in the site are 225 kPa, 179 kPa, and 197 kPa, separately increases 150%, 98.8% and 119% compared to the natural foundation. The vibration main frequency is mainly depended on properties of foundation soil and piles between vibration source and measuring point, pilling load value. Horizontal vibration main frequency greater than the vertical vibration main frequency and the vertical vibration main frequency close to the first-order natural frequency of composite foundation. With the pilling load increasing, the CFGLP-RCSSP pile composite foundation combined frequency decreased. Under the same blast energy, the acceleration peak on the CFG pile composite foundation is less than CFGLP-CFGSP the corresponding values, as the load increases, the peak acceleration gently. CFG pile composite foundation is favorable on seismic. The distribution of peak acceleration is consistent within 4 m from pile top in the CFGLP_RCSSP composite foundation. The maximum of the horizontal acceleration peak along the pile body occurs at a distance of pile top 4 m or the pile top, and that of vertical acceleration peak occurred at a pile top.
文摘Opening the silicon oxide mask of a capacitor in dynamic random access memory is a critical process on a capacitive coupled plasma(CCP)etch tool.Three steps,dielectric anti-reflective coating(DARC)etch back,silicon oxide etch and strip,are contained.To acquire good performance,such as low leakage current and high capacitance,for further fabricating capacitors,we should firstly optimize DARC etch back.We developed some experiments,focusing on etch time and chemistry,to evalu-ate the profile of a silicon oxide mask,DARC remain and critical dimension.The result shows that etch back time should be con-trolled in the range from 50 to 60 s,based on the current equipment and condition.It will make B/T ratio higher than 70%mean-while resolve the DARC remain issue.We also found that CH_(2)F_(2) flow should be~15 sccm to avoid reversed CD trend and keep in-line CD.
