The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non...The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N＋-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N＋-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.展开更多
Isothermal decomposition process of chemically transforming indium tin oxide（ITO） powders into indium（III） hydroxide powders was investigated. Two types of powders were analyzed, i.e., non-activated and mechanical...Isothermal decomposition process of chemically transforming indium tin oxide（ITO） powders into indium（III） hydroxide powders was investigated. Two types of powders were analyzed, i.e., non-activated and mechanically activated. It has been found that in the case of activated sample, shorter induction periods appear, which permits growth of smaller crystals, while in the case of non-activated sample, long induction periods appear, characterized by the growth of larger crystals. DAEM approach has shown that decomposition processes of non-activated and mechanically activated samples can be described by contracting volume model with a linear combination of two different density distribution functions of apparent activation energies（Ea）, and with first-order model, with a single symmetrical density distribution function of Ea, respectively. It was established that specific characteristics of particles not only affect the mechanism of decomposition processes, but also have the significant impact on thermodynamic properties.展开更多
Tin-doped Indium Oxide （ITO） has been successfully prepared via solvothermal method with a mixture of Indium（Ill） acetylacetonate and Tin（IV） bis（acetylacetonate）dichioride in oleyamine solvent under the condi...Tin-doped Indium Oxide （ITO） has been successfully prepared via solvothermal method with a mixture of Indium（Ill） acetylacetonate and Tin（IV） bis（acetylacetonate）dichioride in oleyamine solvent under the condition of the different reaction time from 12 h to 48 h for the first time. The morphology, phase composition and particle size of the ITO powder were characterized by TEM and XRD. Two significant properties required for ITO samples to become noncarbon support for Pt in PEMFCs including specific surface area and electrical conductivity were studied.展开更多
The present work mainly describes the technology for preparing indium-tin oxide （ITO） targets by cold isostatic pressing （CIP） and normal pressure sintering process. ITO powders were produced by chemical co-precip...The present work mainly describes the technology for preparing indium-tin oxide （ITO） targets by cold isostatic pressing （CIP） and normal pressure sintering process. ITO powders were produced by chemical co-precipitation and shaped into an ITO green compact with a relative density of 60% by CIP under 300 MPa. Then, an ITO target with a relative density larger than 99.6% was obtained by sintering this green compact at 1550℃ for 8 h. The effects of forming pressure, sintering temperature and sintering time on the density of the target were inves- tigated. Also, a discussion was made on the sintering atmosphere.展开更多
Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1...Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.展开更多
Microbial cellulose （MC） membranes produced by Acetobacter xylinum NUST4.1,were used as flexible substrates for the fabrication of transparent indium tin oxide （ITO） electrodes.Transparent and conductive ITO thin ...Microbial cellulose （MC） membranes produced by Acetobacter xylinum NUST4.1,were used as flexible substrates for the fabrication of transparent indium tin oxide （ITO） electrodes.Transparent and conductive ITO thin films were deposited on MC membrane at room temperature using radio frequency （RF） magnetron sputtering.The optimum ITO deposition conditions were achieved by examining crystalline structure,surface morphology and op-toelectrical characteristics with X-ray diffraction （XRD）,scanning electron microscopy （SEM）,atomic force mi-croscopy （AFM）,and UV spectroscopy.The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated.The results reveal that the preferred orientation of the deposited ITO crystals is strongly dependent upon with oxygen content （O2/Ar,volume ratio） in the sputtering chamber.And the ITO crystalline structure directly determines the conductivity of ITO-deposited films.High conductive [sheet resis-tance ～120 Ω·square-1 （Ω·sq-1）] and transparent （above 76%） ITO thin films （240 nm thick） were obtained with a moderate sputtering power （about 60 W） and with an oxygen flow rate of 0.25 ml·min-1 （sccm） during the deposi-tion.These results show that the ITO-MC electrodes can find their potential application in optoelectrical devices.展开更多
Indium tin oxide（ITO）thin films（100±10nm）were deposited on PC（polycarbonate）and glass substrates by rf（radio-frequency）mannetron spuutering.The oxygen content of the ITO films was changed by variation of ...Indium tin oxide（ITO）thin films（100±10nm）were deposited on PC（polycarbonate）and glass substrates by rf（radio-frequency）mannetron spuutering.The oxygen content of the ITO films was changed by variation of the sputtering gas composition.All the other deposition parameters were kept constant.The sheet resistance.optical transmittance and microstructure of ITO films were investigated using a four-point probe.spectrophotometer,X-ray diffractometer（XRD）and atomic force microscope（AFM）.Sheet resistances for the ITO films with optical transmittance more than 75% on PC substrates varied from 40Ω/cm^2 to more than 104 Ω/cm^2 with increasing oxygen partial pressure from O to about 2%.The same tendeney of sheet resistances increasing with increasing oxygen partial pressure was observed on glass substrates.The X-ray diffraction data indicated polycrystalline filns with grain orientations predominantly along（440）and （422）directions.The intensities of （440）and （422）peaks increased slightly with the increase of oxygen partial pressure both on PC and glass substrates.The AFM images show that the ITO films on PC substrates were dense and uniform.The average grain size of the films was about 40nm.展开更多
The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the v...The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.展开更多
Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide （ITO） films were prepared on polyethylene terephthalate （PET） substrates by ion assisted deposition （IAD） at room temperat...Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide （ITO） films were prepared on polyethylene terephthalate （PET） substrates by ion assisted deposition （IAD） at room temperature, and the effects of SiO2 and TiOzon the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO2 or TiO2 buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. 1TO films with SiO2 buffer layer have better resistance sta- bilities compared to ones with TiO2 buffer layer after the ITO fdms are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO2 is stronger than that of TiO2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO2 and TiO2 buffer layers can effectively improve the crystallinity of ITO films in （400）, （440） directions.展开更多
The dependence of the performance of organic light-emitting devices（OLEDs） on the sheet resistance of indiumtin-oxide（ITO） anodes was investigated by measuring the steady state current density brightness voltage c...The dependence of the performance of organic light-emitting devices（OLEDs） on the sheet resistance of indiumtin-oxide（ITO） anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence（EL） efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.展开更多
Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties...Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.展开更多
Indium tin oxide(ITO)nanopowders were prepared by a modified chemical co-precipitation process.The influence of different SnO2 contents on the decomposition behavior of ITO precursors,and on the phase and morphology o...Indium tin oxide(ITO)nanopowders were prepared by a modified chemical co-precipitation process.The influence of different SnO2 contents on the decomposition behavior of ITO precursors,and on the phase and morphology of ITO precursors and ITO nanopowders were studied by X-ray diffractometry,transmission electron microscopy and differential thermal and thermogravimetry analysis methods.The TG-DSC curves show that the decomposition process of precursor precipitation is completed when the temperature is close to 600 ℃and the end temperature of decompositionis somewhat lower when the doping amount of SnO2 is increased.The XRD patterns indicate that the solubility limit of Sn4+ relates directly to the calcining temperature. When being calcined at 700℃,a single phase ITO powder with 15%SnO2(mass fraction)can be obtained.But,when the calcining temperature is higher than 800℃,the phase of SnO2 will appear in ITO nanopowders which contain more than 10%SnO2.The particle size of the ITO nanopowders is 15-25 nm.The ITO nanoparticles without Sn have a spherical shape,but their morphology moves towards an irregular shape when being doped with Sn4+.展开更多
Spherical indium tin oxide （ITO） nanoparticles were synthesized by combustion method using citric acid as fuel and nitrates as oxidizer. The obtained ITO nanoparticles were characterized by TG-DSC, FT-IR, XRD, BET, ...Spherical indium tin oxide （ITO） nanoparticles were synthesized by combustion method using citric acid as fuel and nitrates as oxidizer. The obtained ITO nanoparticles were characterized by TG-DSC, FT-IR, XRD, BET, TEM, and SEM. The ITO nanoparticles grew steadily with the increase of heat treatment temperature, and the 700~C calcined particles had a crystallite size of 25.3 nm and a specific surface area of 26.1 m2.g i The avoidance of chlorine ions in the synthesis process decreases particle agglomeration and promotes powder densification. The 900~C sintered pellet had a density of 67.6% of theoretical density （TD） and increased steadily to 97.3% for the 1400℃ sintered ceramics, respectively.展开更多
This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ...This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $／sim 5.65／times 10^{ - 5}$$／Omega ／cdot$cm$^{2}$ and show the transmittance of $／sim $98% at a wavelength of 440nm when annealed at 500／du. Blue light emitting diodes （LEDs） fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21V at an injection current of 20mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20mA in comparison with that of LEDs with conventional Ni/Au contacts展开更多
The properties of poly（3-hexylthiophene）：（6,6）-phenyl C61 butyric acid methyl ester （P3HT：PCBM） organic pho- tovoltaic devices （OPVs） with an indium tin oxide （ITO） anode treated by a KMnO4 solution are in...The properties of poly（3-hexylthiophene）：（6,6）-phenyl C61 butyric acid methyl ester （P3HT：PCBM） organic pho- tovoltaic devices （OPVs） with an indium tin oxide （ITO） anode treated by a KMnO4 solution are investigated. The optimized KMnO4 solution has a concentration of 50 rag/L, and ITO is treated for 15 min. The modification of ITO anode results in an enhancement of the power conversion efficiency （PCE） of the device, which is responsible for the increase of the photocurrent. The performance enhancement is attributed to the work function modification of the ITO substrate through the strong oxygenation of KMnO4, and then the charge collection efficiency is improved.展开更多
hemical co-precipitation method was used to prepare indium tin hydroxide. Indium tin hydroxide has the structure of cubic crystal. The cubic crystal structure transformed to amorphous after heat treatment at 250℃ for...hemical co-precipitation method was used to prepare indium tin hydroxide. Indium tin hydroxide has the structure of cubic crystal. The cubic crystal structure transformed to amorphous after heat treatment at 250℃ for 1 h. When the heat treatment temperature was higher than 280℃, the amorphous transformed to cubic crystal structure. After heat treatment at 600℃ for 1 h, the particle size of indium tin oxide is 8～20 nm. The weight ratio of In∶Sn is near 9∶1. Its granule has spherical shape. The dispersity is good.展开更多
Indium tin oxide （ITO） transparent conducting film was treated with oxygen plasma immersion ion implantation （PIII）. X-ray photoelectron spectroscopy （XPS） was employed to characterize the effect. The results su...Indium tin oxide （ITO） transparent conducting film was treated with oxygen plasma immersion ion implantation （PIII）. X-ray photoelectron spectroscopy （XPS） was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61534008,61376081,and 61404157)the Application Foundation of Suzhou,China(Grant No.SYG201437)
文摘The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N＋-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N＋-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.
基金partially supported by the Ministry of Science and Environmental Protection of Serbia under the Project 172015
文摘Isothermal decomposition process of chemically transforming indium tin oxide（ITO） powders into indium（III） hydroxide powders was investigated. Two types of powders were analyzed, i.e., non-activated and mechanically activated. It has been found that in the case of activated sample, shorter induction periods appear, which permits growth of smaller crystals, while in the case of non-activated sample, long induction periods appear, characterized by the growth of larger crystals. DAEM approach has shown that decomposition processes of non-activated and mechanically activated samples can be described by contracting volume model with a linear combination of two different density distribution functions of apparent activation energies（Ea）, and with first-order model, with a single symmetrical density distribution function of Ea, respectively. It was established that specific characteristics of particles not only affect the mechanism of decomposition processes, but also have the significant impact on thermodynamic properties.
文摘Tin-doped Indium Oxide （ITO） has been successfully prepared via solvothermal method with a mixture of Indium（Ill） acetylacetonate and Tin（IV） bis（acetylacetonate）dichioride in oleyamine solvent under the condition of the different reaction time from 12 h to 48 h for the first time. The morphology, phase composition and particle size of the ITO powder were characterized by TEM and XRD. Two significant properties required for ITO samples to become noncarbon support for Pt in PEMFCs including specific surface area and electrical conductivity were studied.
基金supported by the National High-Tech Research and Development Program of China(No. 2004AA303542)
文摘The present work mainly describes the technology for preparing indium-tin oxide （ITO） targets by cold isostatic pressing （CIP） and normal pressure sintering process. ITO powders were produced by chemical co-precipitation and shaped into an ITO green compact with a relative density of 60% by CIP under 300 MPa. Then, an ITO target with a relative density larger than 99.6% was obtained by sintering this green compact at 1550℃ for 8 h. The effects of forming pressure, sintering temperature and sintering time on the density of the target were inves- tigated. Also, a discussion was made on the sintering atmosphere.
基金This work was financially supported by the National Defence Science Council of China (NO. 5141002040JW0504) and the Excellent Ph.D Thesis Foundation of Huazhong University of Science and Technology (No. HUST2004-39).
文摘Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.
基金Supported by the National Natural Science Foundation of China （10776014） Nanjing University of Science and Technology （NUST） Research Funding
文摘Microbial cellulose （MC） membranes produced by Acetobacter xylinum NUST4.1,were used as flexible substrates for the fabrication of transparent indium tin oxide （ITO） electrodes.Transparent and conductive ITO thin films were deposited on MC membrane at room temperature using radio frequency （RF） magnetron sputtering.The optimum ITO deposition conditions were achieved by examining crystalline structure,surface morphology and op-toelectrical characteristics with X-ray diffraction （XRD）,scanning electron microscopy （SEM）,atomic force mi-croscopy （AFM）,and UV spectroscopy.The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated.The results reveal that the preferred orientation of the deposited ITO crystals is strongly dependent upon with oxygen content （O2/Ar,volume ratio） in the sputtering chamber.And the ITO crystalline structure directly determines the conductivity of ITO-deposited films.High conductive [sheet resis-tance ～120 Ω·square-1 （Ω·sq-1）] and transparent （above 76%） ITO thin films （240 nm thick） were obtained with a moderate sputtering power （about 60 W） and with an oxygen flow rate of 0.25 ml·min-1 （sccm） during the deposi-tion.These results show that the ITO-MC electrodes can find their potential application in optoelectrical devices.
文摘Indium tin oxide（ITO）thin films（100±10nm）were deposited on PC（polycarbonate）and glass substrates by rf（radio-frequency）mannetron spuutering.The oxygen content of the ITO films was changed by variation of the sputtering gas composition.All the other deposition parameters were kept constant.The sheet resistance.optical transmittance and microstructure of ITO films were investigated using a four-point probe.spectrophotometer,X-ray diffractometer（XRD）and atomic force microscope（AFM）.Sheet resistances for the ITO films with optical transmittance more than 75% on PC substrates varied from 40Ω/cm^2 to more than 104 Ω/cm^2 with increasing oxygen partial pressure from O to about 2%.The same tendeney of sheet resistances increasing with increasing oxygen partial pressure was observed on glass substrates.The X-ray diffraction data indicated polycrystalline filns with grain orientations predominantly along（440）and （422）directions.The intensities of （440）and （422）peaks increased slightly with the increase of oxygen partial pressure both on PC and glass substrates.The AFM images show that the ITO films on PC substrates were dense and uniform.The average grain size of the films was about 40nm.
基金supported by the National Natural Science Foundation of China(Grant Nos.61222501 and 61335004)
文摘The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.
基金supported by the National Eleventh Five-Year Pre-research Project of China (No.51302060203)
文摘Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide （ITO） films were prepared on polyethylene terephthalate （PET） substrates by ion assisted deposition （IAD） at room temperature, and the effects of SiO2 and TiOzon the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO2 or TiO2 buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. 1TO films with SiO2 buffer layer have better resistance sta- bilities compared to ones with TiO2 buffer layer after the ITO fdms are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO2 is stronger than that of TiO2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO2 and TiO2 buffer layers can effectively improve the crystallinity of ITO films in （400）, （440） directions.
基金Supported by the National Natural Science Foundation of China(No. 20372060), the Key National Natural Science Foundationof China(No. 20131010), the Important National Natural Science Foundation of China(No. 20490210), the"863"Program(Nos.2002AA302105 and 2002AA324080) and Foreign Communion &Cooperation of National Natural Science Foundation of China(No.20340420326).
文摘The dependence of the performance of organic light-emitting devices（OLEDs） on the sheet resistance of indiumtin-oxide（ITO） anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence（EL） efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.
基金supported by the National Natural Science Foundation of China under Grants No.60425101Young Excellence Project of University of Electronic Science and Technology of China(UESTC-060206)project.
文摘Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.
基金Project(U0837604)supported by the Natural Science Foundation of Yunnan Province,ChinaProject(07C40291)supported by Research Fund of Yunnan Education Department,ChinaProject(2007003)supported by Research Fund of Kunming University of Science and Technology,China
文摘Indium tin oxide(ITO)nanopowders were prepared by a modified chemical co-precipitation process.The influence of different SnO2 contents on the decomposition behavior of ITO precursors,and on the phase and morphology of ITO precursors and ITO nanopowders were studied by X-ray diffractometry,transmission electron microscopy and differential thermal and thermogravimetry analysis methods.The TG-DSC curves show that the decomposition process of precursor precipitation is completed when the temperature is close to 600 ℃and the end temperature of decompositionis somewhat lower when the doping amount of SnO2 is increased.The XRD patterns indicate that the solubility limit of Sn4+ relates directly to the calcining temperature. When being calcined at 700℃,a single phase ITO powder with 15%SnO2(mass fraction)can be obtained.But,when the calcining temperature is higher than 800℃,the phase of SnO2 will appear in ITO nanopowders which contain more than 10%SnO2.The particle size of the ITO nanopowders is 15-25 nm.The ITO nanoparticles without Sn have a spherical shape,but their morphology moves towards an irregular shape when being doped with Sn4+.
文摘Spherical indium tin oxide （ITO） nanoparticles were synthesized by combustion method using citric acid as fuel and nitrates as oxidizer. The obtained ITO nanoparticles were characterized by TG-DSC, FT-IR, XRD, BET, TEM, and SEM. The ITO nanoparticles grew steadily with the increase of heat treatment temperature, and the 700~C calcined particles had a crystallite size of 25.3 nm and a specific surface area of 26.1 m2.g i The avoidance of chlorine ions in the synthesis process decreases particle agglomeration and promotes powder densification. The 900~C sintered pellet had a density of 67.6% of theoretical density （TD） and increased steadily to 97.3% for the 1400℃ sintered ceramics, respectively.
基金Project supported by Science and Technology Planning Project of Guangdong Province (Grant No. 2007A010501008)the Production and Research Project of Guangdong Province and the Ministry of Education (Grant No. 2009B090300338)
文摘This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $／sim 5.65／times 10^{ - 5}$$／Omega ／cdot$cm$^{2}$ and show the transmittance of $／sim $98% at a wavelength of 440nm when annealed at 500／du. Blue light emitting diodes （LEDs） fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21V at an injection current of 20mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20mA in comparison with that of LEDs with conventional Ni/Au contacts
基金Project supported by the National Natural Science Foundation of China(Grant Nos.10974013 and 60978060)the Research Fund for the Doctoral Program of Higher Education,China(Grant No.20090009110027)+3 种基金the Beijing Municipal Natural Science Foundation,China(Grant No.1102028)the New Century Excellent Talents in University,China(Grant No.NCET-10-0220)the Fundamental Research Funds for the Central Universities,China(Grant No.2012JBZ001)the Technology Innovation Fund for Outstanding Ph.D.Students of Beijing Jiaotong University,China(Grant No.48034)
文摘The properties of poly（3-hexylthiophene）：（6,6）-phenyl C61 butyric acid methyl ester （P3HT：PCBM） organic pho- tovoltaic devices （OPVs） with an indium tin oxide （ITO） anode treated by a KMnO4 solution are investigated. The optimized KMnO4 solution has a concentration of 50 rag/L, and ITO is treated for 15 min. The modification of ITO anode results in an enhancement of the power conversion efficiency （PCE） of the device, which is responsible for the increase of the photocurrent. The performance enhancement is attributed to the work function modification of the ITO substrate through the strong oxygenation of KMnO4, and then the charge collection efficiency is improved.
文摘hemical co-precipitation method was used to prepare indium tin hydroxide. Indium tin hydroxide has the structure of cubic crystal. The cubic crystal structure transformed to amorphous after heat treatment at 250℃ for 1 h. When the heat treatment temperature was higher than 280℃, the amorphous transformed to cubic crystal structure. After heat treatment at 600℃ for 1 h, the particle size of indium tin oxide is 8～20 nm. The weight ratio of In∶Sn is near 9∶1. Its granule has spherical shape. The dispersity is good.
基金supported by National Natural Science Foundation of China(Nos.11005021,51177017 and 11175049)
文摘Indium tin oxide （ITO） transparent conducting film was treated with oxygen plasma immersion ion implantation （PIII）. X-ray photoelectron spectroscopy （XPS） was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.
