Using native CMOS technology,EDA tool,and adopting full-custom design methodology,a laser diode driver for the use of STM-1 and STM-4 optical access network,is realized by CSMC-HJ 0.6μm CMOS technology to modulate la...Using native CMOS technology,EDA tool,and adopting full-custom design methodology,a laser diode driver for the use of STM-1 and STM-4 optical access network,is realized by CSMC-HJ 0.6μm CMOS technology to modulate laser diodes at 155Mb/s (STM-1),622Mb/s (STM-4) with adjustable modulation current from 0 to 50mA for an equivalent 50Ω load.The maximum modulation voltage is over 2.5V pp corresponding to a 3V DC bias for output stage.The time range of rise and fall from 360ps to 471ps is measured from the output voltage pulse.The RMS jitter is no more than 30ps for four bit rates.The power consumption is less than 410mW under a power supply voltage of 5V.According to the experimental results,the laser diode driver achieves the same level as their counterparts worldwide.展开更多
A DC-10Mb/s laser diode driver,compatible with TTL and CMOS levels,is presented. The optical power corresponding to‘1＇ and ‘0＇ can be set independently with resistors off-chip and stabilized with a closed loop. A ...A DC-10Mb/s laser diode driver,compatible with TTL and CMOS levels,is presented. The optical power corresponding to‘1＇ and ‘0＇ can be set independently with resistors off-chip and stabilized with a closed loop. A novel peak-to- peak optical power monitor and stabilization mechanism is introduced. The circuit, fabricated in a CSMC 0. 5μm mixed signal CMOS process, can provide 120mA maximum drive current and 0. 6dB extinction ration fluctuation over - 20 ＋ 80℃ ,which is independent of input pattern.展开更多
This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. Wit...This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. With the current mode logic （CML） structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data. By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate. The core circuit is operated under a 3. 3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode. The chip occupies a die area of 600 μm × 800μm. Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethemet eye mask. Under a 5. 5 V supply voltage, the maximum output swing is 3.0 V with a 50 12 load （the corresponding modulation current is 60 mA）, and the total power dissipation is 660 mW.展开更多
This paper presents the design and testing of a 15 Gbps non-return-to-zero(NRZ),30 Gbps 4-level pulse amplitude modulation(PAM4)configurable laser diode driver(LDD)implemented in 0.15-μm GaAs E-mode pHEMT technology....This paper presents the design and testing of a 15 Gbps non-return-to-zero(NRZ),30 Gbps 4-level pulse amplitude modulation(PAM4)configurable laser diode driver(LDD)implemented in 0.15-μm GaAs E-mode pHEMT technology.The driver bandwidth is enhanced by utilizing cross-coupled neutralization capacitors across the output stage.The output transmission-line back-termination,which absorbs signal reflections from the imperfectly matched load,is performed passively with on-chip 50-Ωresistors.The proposed 30 Gbps PAM4 LDD is implemented by combining two 15 Gbps-NRZ LDDs,as the high and low amplification paths,to generate PAM4 output current signal with levels of 0,40,80,and 120 mA when driving 25-Ωlasers.The high and low amplification paths can be used separately or simultaneously as a 15 Gbps-NRZ LDD.The measurement results show clear output eye diagrams at speeds of up to 15 and 30 Gbps for the NRZ and PAM4 drivers,respectively.At a maximum output current of 120 mA,the driver consumes 1.228 W from a single supply voltage of-5.2 V.The proposed driver shows a high current driving capability with a better output power to power dissipation ratio,which makes it suitable for driving high current distributed feedback(DFB)lasers.The chip occupies a total area of 0.7×1.3 mm^(2).展开更多
An integrated laser diode driver(LDD) driving an edge-emitting laser diode was designed and fabricated by 0.35 μm BiCMOS technology. This paper proposes a scheme which combines the automatic power control loop and te...An integrated laser diode driver(LDD) driving an edge-emitting laser diode was designed and fabricated by 0.35 μm BiCMOS technology. This paper proposes a scheme which combines the automatic power control loop and temperature com-pensation for modulation current in order to maintain constant extinction ratio and average optical power. To implement tem-perature compensation for modulation current,a novel circuit which generates a PTAT current by using the injecting base current of a bipolar transistor in saturation region,and alternates the amplifier feedback loop(closed or not) to control the state of the current path is presented. Simulation results showed that programmed by choice of external resistors,the IC can provide modu-lation current from 5 mA to 85 mA with temperature compensation adjustments and independent bias current from 4 mA to 100 mA. Optical test results showed that clear eye-diagrams can be obtained at 155 Mbps,with the output optical power being nearly constant,and the variation of extinction ratio being lower than 0.7 dB.展开更多
During the last year the high power laser diodes jumped over the 1 kW level of CW power for a stack, and the commercial 1 cm bars reached 100 W output optical power at the standard wavelengths around 800 nm and 980 nm...During the last year the high power laser diodes jumped over the 1 kW level of CW power for a stack, and the commercial 1 cm bars reached 100 W output optical power at the standard wavelengths around 800 nm and 980 nm. The prices are reaching the industry acceptable levels. All Nd∶YAG and fiber industrial lasers manufacturers have developed kW prototypes. Those achievements have set new requirements for the power supplies manufactuers-high and stable output current, and possibilities for fast control of the driving current, keeping safe the expensive laser diode. The fast switching frequencies also allow long range free space communications and optical range finding. The high frequencies allow the design of a 3D laser radar with high resolution and other military applications. The prospects for direct laser diode micro machining are also attractive.展开更多
Light detection and ranging (LIDAR) based on time of flight (TOF) method is widely used in many fields related to distance measurement. LIDAR generally uses laser diode (LD) to emit the pulsed laser with high peak pow...Light detection and ranging (LIDAR) based on time of flight (TOF) method is widely used in many fields related to distance measurement. LIDAR generally uses laser diode (LD) to emit the pulsed laser with high peak power and short duration to ensure a large distance measurement range and eye safety. To achieve this goal, we propose a pulsed LD drive method producing the drive current with high peak and narrow pulse width. We analyze the key issues and related theories of the drive current generation based on this method and design an LD driver. A model of drive current generation is established and the influence of operating frequency on drive current is discussed. The LD driver is simulated by software and verified by experiments. The working frequency of the driver changes from 20 kHz to 100 kHz and the charging voltage is set at 130 V. The current produced by this driver has a duration of 8.8 ns and a peak of about 35 A, and the peak output optical power of the LD exceeds 75 W.展开更多
文摘Using native CMOS technology,EDA tool,and adopting full-custom design methodology,a laser diode driver for the use of STM-1 and STM-4 optical access network,is realized by CSMC-HJ 0.6μm CMOS technology to modulate laser diodes at 155Mb/s (STM-1),622Mb/s (STM-4) with adjustable modulation current from 0 to 50mA for an equivalent 50Ω load.The maximum modulation voltage is over 2.5V pp corresponding to a 3V DC bias for output stage.The time range of rise and fall from 360ps to 471ps is measured from the output voltage pulse.The RMS jitter is no more than 30ps for four bit rates.The power consumption is less than 410mW under a power supply voltage of 5V.According to the experimental results,the laser diode driver achieves the same level as their counterparts worldwide.
文摘A DC-10Mb/s laser diode driver,compatible with TTL and CMOS levels,is presented. The optical power corresponding to‘1＇ and ‘0＇ can be set independently with resistors off-chip and stabilized with a closed loop. A novel peak-to- peak optical power monitor and stabilization mechanism is introduced. The circuit, fabricated in a CSMC 0. 5μm mixed signal CMOS process, can provide 120mA maximum drive current and 0. 6dB extinction ration fluctuation over - 20 ＋ 80℃ ,which is independent of input pattern.
基金The National High Technology Research and Development Program of China(863 Program)(No.2006AA01Z284)
文摘This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. With the current mode logic （CML） structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data. By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate. The core circuit is operated under a 3. 3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode. The chip occupies a die area of 600 μm × 800μm. Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethemet eye mask. Under a 5. 5 V supply voltage, the maximum output swing is 3.0 V with a 50 12 load （the corresponding modulation current is 60 mA）, and the total power dissipation is 660 mW.
文摘This paper presents the design and testing of a 15 Gbps non-return-to-zero(NRZ),30 Gbps 4-level pulse amplitude modulation(PAM4)configurable laser diode driver(LDD)implemented in 0.15-μm GaAs E-mode pHEMT technology.The driver bandwidth is enhanced by utilizing cross-coupled neutralization capacitors across the output stage.The output transmission-line back-termination,which absorbs signal reflections from the imperfectly matched load,is performed passively with on-chip 50-Ωresistors.The proposed 30 Gbps PAM4 LDD is implemented by combining two 15 Gbps-NRZ LDDs,as the high and low amplification paths,to generate PAM4 output current signal with levels of 0,40,80,and 120 mA when driving 25-Ωlasers.The high and low amplification paths can be used separately or simultaneously as a 15 Gbps-NRZ LDD.The measurement results show clear output eye diagrams at speeds of up to 15 and 30 Gbps for the NRZ and PAM4 drivers,respectively.At a maximum output current of 120 mA,the driver consumes 1.228 W from a single supply voltage of-5.2 V.The proposed driver shows a high current driving capability with a better output power to power dissipation ratio,which makes it suitable for driving high current distributed feedback(DFB)lasers.The chip occupies a total area of 0.7×1.3 mm^(2).
基金Project (No. 2006AA01Z226) supported by the Hi-Tech Researchand Development Program (863) of China
文摘An integrated laser diode driver(LDD) driving an edge-emitting laser diode was designed and fabricated by 0.35 μm BiCMOS technology. This paper proposes a scheme which combines the automatic power control loop and temperature com-pensation for modulation current in order to maintain constant extinction ratio and average optical power. To implement tem-perature compensation for modulation current,a novel circuit which generates a PTAT current by using the injecting base current of a bipolar transistor in saturation region,and alternates the amplifier feedback loop(closed or not) to control the state of the current path is presented. Simulation results showed that programmed by choice of external resistors,the IC can provide modu-lation current from 5 mA to 85 mA with temperature compensation adjustments and independent bias current from 4 mA to 100 mA. Optical test results showed that clear eye-diagrams can be obtained at 155 Mbps,with the output optical power being nearly constant,and the variation of extinction ratio being lower than 0.7 dB.
文摘During the last year the high power laser diodes jumped over the 1 kW level of CW power for a stack, and the commercial 1 cm bars reached 100 W output optical power at the standard wavelengths around 800 nm and 980 nm. The prices are reaching the industry acceptable levels. All Nd∶YAG and fiber industrial lasers manufacturers have developed kW prototypes. Those achievements have set new requirements for the power supplies manufactuers-high and stable output current, and possibilities for fast control of the driving current, keeping safe the expensive laser diode. The fast switching frequencies also allow long range free space communications and optical range finding. The high frequencies allow the design of a 3D laser radar with high resolution and other military applications. The prospects for direct laser diode micro machining are also attractive.
基金National Key Research and Development Plan(No.2017YFF0204800)Natural Science Foundation of Tianjin(No.17JCQNJC01100)+3 种基金National Natural Science Foundation of China(Nos.61501319,51775377,61505140)Young Elite Scientists Sponsorship Program by Cast of China(No.2016QNRC001)Open Project of Key Laboratory of Micro Opto-electro Mechanical System Technology(No.MOMST2015-7)Open Project from Photoelectric Information and Instrument-Engineering Research Center of Beijing,Tianjin University,Ministry of Education(No.GD2015007)
文摘Light detection and ranging (LIDAR) based on time of flight (TOF) method is widely used in many fields related to distance measurement. LIDAR generally uses laser diode (LD) to emit the pulsed laser with high peak power and short duration to ensure a large distance measurement range and eye safety. To achieve this goal, we propose a pulsed LD drive method producing the drive current with high peak and narrow pulse width. We analyze the key issues and related theories of the drive current generation based on this method and design an LD driver. A model of drive current generation is established and the influence of operating frequency on drive current is discussed. The LD driver is simulated by software and verified by experiments. The working frequency of the driver changes from 20 kHz to 100 kHz and the charging voltage is set at 130 V. The current produced by this driver has a duration of 8.8 ns and a peak of about 35 A, and the peak output optical power of the LD exceeds 75 W.
