The failure of a bipolar static induction transistor （BSIT） often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the swi...The failure of a bipolar static induction transistor （BSIT） often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices. The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper. The influences of material, structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth. The technological approaches are developed to improve the dynamical characteristics of BSITs.展开更多
Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,enc...Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,encompassing materials and device technology,have enabled the fabrication of circuits with over 1000 gates,marking carbon-based integrated circuit design as a burgeoning field of research.A critical challenge in the realm of carbon-based very-large-scale integration(VLSI)is the lack of suitable automated design methodologies and infrastructure platforms.In this study,we present the development of a waferscale 3μm carbon-based complementary metal-oxide-semiconductor(CMOS)process design kit(PDK)(3μm-CNTFETs-PDK)compatible with silicon-based Electronic Design Automation(EDA)tools and VLSI circuit design flow.The proposed 3μm-CNTFETs-PDK features a contacted gate pitch(CGP)of 21μm,a gate density of 128 gates/mm^(2),and a transistor density of 554 transistors/mm^(2),with an intrinsic gate delay around 134 ns.Validation of the 3μm-CNTFETs-PDK was achieved through the successful design and tape-out of 153 standard cells and 333-stage ring oscillator circuits.Leveraging the carbon-based PDK and a silicon-based design platform,we successfully implemented a complete 64-bit static random-access memory(SRAM)circuit system for the first time,which exhibited timing,power,and area characteristics of clock@10 kHz,122.1μW,3795μm×2810μm.This research confirms that carbon-based IC design can be compatible with existing EDA tools and silicon-based VLSI design flow,thereby laying the groundwork for future carbon-based VLSI advancements.展开更多
基金supported by the Scientific and Technological Supporting Program of Gansu Province,China(No.097GKCA052)the Foundamental Research Funds for the Central Universities(No.lzujbky-2009-14)
文摘The failure of a bipolar static induction transistor （BSIT） often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices. The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper. The influences of material, structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth. The technological approaches are developed to improve the dynamical characteristics of BSITs.
基金The authors gratefully acknowledge fundings from the Strategic Priority Research Program of Chinese Academy of Sciences(CAS)(No.XDA0330401)CAS Youth Interdisciplinary Team(No.JCTD-2022-07).
文摘Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,encompassing materials and device technology,have enabled the fabrication of circuits with over 1000 gates,marking carbon-based integrated circuit design as a burgeoning field of research.A critical challenge in the realm of carbon-based very-large-scale integration(VLSI)is the lack of suitable automated design methodologies and infrastructure platforms.In this study,we present the development of a waferscale 3μm carbon-based complementary metal-oxide-semiconductor(CMOS)process design kit(PDK)(3μm-CNTFETs-PDK)compatible with silicon-based Electronic Design Automation(EDA)tools and VLSI circuit design flow.The proposed 3μm-CNTFETs-PDK features a contacted gate pitch(CGP)of 21μm,a gate density of 128 gates/mm^(2),and a transistor density of 554 transistors/mm^(2),with an intrinsic gate delay around 134 ns.Validation of the 3μm-CNTFETs-PDK was achieved through the successful design and tape-out of 153 standard cells and 333-stage ring oscillator circuits.Leveraging the carbon-based PDK and a silicon-based design platform,we successfully implemented a complete 64-bit static random-access memory(SRAM)circuit system for the first time,which exhibited timing,power,and area characteristics of clock@10 kHz,122.1μW,3795μm×2810μm.This research confirms that carbon-based IC design can be compatible with existing EDA tools and silicon-based VLSI design flow,thereby laying the groundwork for future carbon-based VLSI advancements.
