为探讨分形基底结构对生长表面标度行为的影响,本文采用Kinetic Monte Carlo(KMC)方法模拟了刻蚀模型(etching model)在谢尔宾斯基箭头和蟹状分形基底上刻蚀表面的动力学行为.研究表明,在两种分形基底上的刻蚀模型都表现出很好的动力学...为探讨分形基底结构对生长表面标度行为的影响,本文采用Kinetic Monte Carlo(KMC)方法模拟了刻蚀模型(etching model)在谢尔宾斯基箭头和蟹状分形基底上刻蚀表面的动力学行为.研究表明,在两种分形基底上的刻蚀模型都表现出很好的动力学标度行为,并且满足Family-Vicsek标度规律.虽然谢尔宾斯基箭头和蟹状分形基底的分形维数相同,但模拟得到的标度指数却不同,并且粗糙度指数α与动力学指数z也不满足在欧几里得基底上成立的标度关系α+z=2.由此可以看出,标度指数不仅与基底的分形维数有关,而且和分形基底的具体结构有关.展开更多
表面界面动力学粗化过程是凝聚态物理领域重要的研究内容,为研究基底不完整性对刻蚀模型动力学标度行为的影响,本文采用Kinetic Monte Carlo(KMC)方法,分析研究了在随机稀释基底上刻蚀模型(Etching model)生长表面的动力学标度行为.研...表面界面动力学粗化过程是凝聚态物理领域重要的研究内容,为研究基底不完整性对刻蚀模型动力学标度行为的影响,本文采用Kinetic Monte Carlo(KMC)方法,分析研究了在随机稀释基底上刻蚀模型(Etching model)生长表面的动力学标度行为.研究发现:尽管随机稀释基底的不完整性会对刻蚀表面的动力学行为产生显著的影响,导致刻蚀表面粗糙度指数和生长指数有明显的增加,但其仍基本满足原有的动力学标度规律.此外,本文还对刻蚀表面动力学标度指数的有限尺寸效应进行了分析讨论.展开更多
By means of the pore-level simulation, the characteristics of gas-water flow and gas-water distribution during the alternative displacement of gas and water were observed directly from etched-glass micromodel. The res...By means of the pore-level simulation, the characteristics of gas-water flow and gas-water distribution during the alternative displacement of gas and water were observed directly from etched-glass micromodel. The results show that gas-water distribution styles are divided into continuous phase type and separate phase type. The water lock exists in pore and throat during the process of gas-water displacement, and it reduces the gas flow-rate and has some effects on the recovery efficiency during the operation of gas storage. According to the experimental results of aquifer gas storage in X area, the differences in available extent among reservoirs are significant, and the availability of pore space is 33% 45%.展开更多
To improve overall equipment efficiency(OEE) of a semiconductor wafer wet-etching system,a heuristic tabu search scheduling algorithm is proposed for the wet-etching process in the paper,with material handling robot c...To improve overall equipment efficiency(OEE) of a semiconductor wafer wet-etching system,a heuristic tabu search scheduling algorithm is proposed for the wet-etching process in the paper,with material handling robot capacity and wafer processing time constraints of the process modules considered.Firstly,scheduling problem domains of the wet-etching system(WES) are assumed and defined,and a non-linear programming model is built to maximize the throughput with no defective wafers.On the basis of the model,a scheduling algorithm based on tabu search is presented in this paper.An improved Nawaz,Enscore,and Ham(NEH) heuristic algorithm is used as the initial feasible solution of the proposed heuristic algorithm.Finally,performances of the proposed algorithm are analyzed and evaluated by simulation experiments.The results indicate that the proposed algorithm is valid and practical to generate satisfied scheduling solutions.展开更多
文摘为探讨分形基底结构对生长表面标度行为的影响,本文采用Kinetic Monte Carlo(KMC)方法模拟了刻蚀模型(etching model)在谢尔宾斯基箭头和蟹状分形基底上刻蚀表面的动力学行为.研究表明,在两种分形基底上的刻蚀模型都表现出很好的动力学标度行为,并且满足Family-Vicsek标度规律.虽然谢尔宾斯基箭头和蟹状分形基底的分形维数相同,但模拟得到的标度指数却不同,并且粗糙度指数α与动力学指数z也不满足在欧几里得基底上成立的标度关系α+z=2.由此可以看出,标度指数不仅与基底的分形维数有关,而且和分形基底的具体结构有关.
文摘表面界面动力学粗化过程是凝聚态物理领域重要的研究内容,为研究基底不完整性对刻蚀模型动力学标度行为的影响,本文采用Kinetic Monte Carlo(KMC)方法,分析研究了在随机稀释基底上刻蚀模型(Etching model)生长表面的动力学标度行为.研究发现:尽管随机稀释基底的不完整性会对刻蚀表面的动力学行为产生显著的影响,导致刻蚀表面粗糙度指数和生长指数有明显的增加,但其仍基本满足原有的动力学标度规律.此外,本文还对刻蚀表面动力学标度指数的有限尺寸效应进行了分析讨论.
基金Project(2011ZX05013-002)supported by National Science and Technology Major Projects of China
文摘By means of the pore-level simulation, the characteristics of gas-water flow and gas-water distribution during the alternative displacement of gas and water were observed directly from etched-glass micromodel. The results show that gas-water distribution styles are divided into continuous phase type and separate phase type. The water lock exists in pore and throat during the process of gas-water displacement, and it reduces the gas flow-rate and has some effects on the recovery efficiency during the operation of gas storage. According to the experimental results of aquifer gas storage in X area, the differences in available extent among reservoirs are significant, and the availability of pore space is 33% 45%.
基金Supported by the National Natural Science Foundation of China(No.71071115,61273035)
文摘To improve overall equipment efficiency(OEE) of a semiconductor wafer wet-etching system,a heuristic tabu search scheduling algorithm is proposed for the wet-etching process in the paper,with material handling robot capacity and wafer processing time constraints of the process modules considered.Firstly,scheduling problem domains of the wet-etching system(WES) are assumed and defined,and a non-linear programming model is built to maximize the throughput with no defective wafers.On the basis of the model,a scheduling algorithm based on tabu search is presented in this paper.An improved Nawaz,Enscore,and Ham(NEH) heuristic algorithm is used as the initial feasible solution of the proposed heuristic algorithm.Finally,performances of the proposed algorithm are analyzed and evaluated by simulation experiments.The results indicate that the proposed algorithm is valid and practical to generate satisfied scheduling solutions.
