Using H 2 diluted silane,series of μc Si∶H films are fabricated at low temperature with VHF PECVD.The thickness measurements reveal that the deposition rates are obviously enhanced with higher plasma excitation ...Using H 2 diluted silane,series of μc Si∶H films are fabricated at low temperature with VHF PECVD.The thickness measurements reveal that the deposition rates are obviously enhanced with higher plasma excitation frequency or working pressure,but increase firstly and then decrease with the increase of plasma power density.Raman spectra show that the crystallinity and the average grain sizes of the films strongly depend on the temperature of substrate and the concentration of silane.However,the plasma excitation frequency only has effect on the crystallinity,and a maximum occurs during the further increase of plasma excitation frequency.From XRD and TEM experiments,three preferential crystalline orientations (111),(220) and (311) are observed,and the average grain sizes are different for every crystalline orientation.展开更多
Continuous noise resistance calculation(CNRC)technique was used for online determination of the electroless nickel deposition rate on zirconium pretreated magnesium alloy.For this purpose,the noise resistance(R_n) var...Continuous noise resistance calculation(CNRC)technique was used for online determination of the electroless nickel deposition rate on zirconium pretreated magnesium alloy.For this purpose,the noise resistance(R_n) variation with time was calculated for the pretreated alloy surface in the electroless plating solution.The CNRC results were described by energy dispersive X-ray spectroscopy(EDS)and scanning electron microscopy(SEM)techniques.Also,potentiodynamic polarization and gravimetric measurements were used for determination of the electroless deposition rate at the same time period and the results were compared with the CNRC results.The Rn variation with plating time shows that the electroless plating consists of different stages with various deposition rates.The results of the CNRC and polarization methods were not in acceptable agreement due to the limitations of the polarization method for online monitoring of the deposition rate.However,the results of the gravimetric measurements were in complete agreement with the CNRC technique and so,the CNRC can be considered as suitable tool for online evaluation of the electroless deposition rate.展开更多
Graphene growth by low-pressure chemical vapor deposition on low cost copper foils shows great promise for large scale applications. It is known that the local crystallography of the foil influences the graphene growt...Graphene growth by low-pressure chemical vapor deposition on low cost copper foils shows great promise for large scale applications. It is known that the local crystallography of the foil influences the graphene growth rate. Here we find an epitaxial relationship between graphene and copper foil. Interfacial restructuring between graphene and copper drives the formation of （nl0） facets on what is otherwise a mostly Cu（100） surface, and the facets in turn influence the graphene orientations from the onset of growth. Angle resolved photoemission shows that the electronic structure of the graphene is decoupled from the copper indicating a weak interaction between them. Despite this, two preferred orientations of graphene are found, ±8° from the Cu[010] direction, creating a non-uniform distribution of graphene grain boundary misorientation angles. Comparison with the model system of graphene growth on single crystal Cu（110） indicates that this orientational alignment is due to mismatch epitaxy. Despite the differences in symmetry the orientation of the graphene is defined by that of the copper. We expect these observations to not only have importance for controlling and understanding the growth process for graphene on copper, but also to have wider implications for the growth of two-dimensional materials on low cost metal substrates.展开更多
文摘Using H 2 diluted silane,series of μc Si∶H films are fabricated at low temperature with VHF PECVD.The thickness measurements reveal that the deposition rates are obviously enhanced with higher plasma excitation frequency or working pressure,but increase firstly and then decrease with the increase of plasma power density.Raman spectra show that the crystallinity and the average grain sizes of the films strongly depend on the temperature of substrate and the concentration of silane.However,the plasma excitation frequency only has effect on the crystallinity,and a maximum occurs during the further increase of plasma excitation frequency.From XRD and TEM experiments,three preferential crystalline orientations (111),(220) and (311) are observed,and the average grain sizes are different for every crystalline orientation.
文摘Continuous noise resistance calculation(CNRC)technique was used for online determination of the electroless nickel deposition rate on zirconium pretreated magnesium alloy.For this purpose,the noise resistance(R_n) variation with time was calculated for the pretreated alloy surface in the electroless plating solution.The CNRC results were described by energy dispersive X-ray spectroscopy(EDS)and scanning electron microscopy(SEM)techniques.Also,potentiodynamic polarization and gravimetric measurements were used for determination of the electroless deposition rate at the same time period and the results were compared with the CNRC results.The Rn variation with plating time shows that the electroless plating consists of different stages with various deposition rates.The results of the CNRC and polarization methods were not in acceptable agreement due to the limitations of the polarization method for online monitoring of the deposition rate.However,the results of the gravimetric measurements were in complete agreement with the CNRC technique and so,the CNRC can be considered as suitable tool for online evaluation of the electroless deposition rate.
文摘Graphene growth by low-pressure chemical vapor deposition on low cost copper foils shows great promise for large scale applications. It is known that the local crystallography of the foil influences the graphene growth rate. Here we find an epitaxial relationship between graphene and copper foil. Interfacial restructuring between graphene and copper drives the formation of （nl0） facets on what is otherwise a mostly Cu（100） surface, and the facets in turn influence the graphene orientations from the onset of growth. Angle resolved photoemission shows that the electronic structure of the graphene is decoupled from the copper indicating a weak interaction between them. Despite this, two preferred orientations of graphene are found, ±8° from the Cu[010] direction, creating a non-uniform distribution of graphene grain boundary misorientation angles. Comparison with the model system of graphene growth on single crystal Cu（110） indicates that this orientational alignment is due to mismatch epitaxy. Despite the differences in symmetry the orientation of the graphene is defined by that of the copper. We expect these observations to not only have importance for controlling and understanding the growth process for graphene on copper, but also to have wider implications for the growth of two-dimensional materials on low cost metal substrates.
