Y2000-62027-12 0005483利用亚0.2μm 过程的适用于高密度 DRAM 的23μC/μm<sup>2</sup>TA<sub>2</sub>O<sub>5</sub>/固化硅电容器研究=A study of Ta<sub>2</sub>O<sub>5<...Y2000-62027-12 0005483利用亚0.2μm 过程的适用于高密度 DRAM 的23μC/μm<sup>2</sup>TA<sub>2</sub>O<sub>5</sub>/固化硅电容器研究=A study of Ta<sub>2</sub>O<sub>5</sub>/rugged Si Capacitor of 23μC/μm<sup>2</sup> applied to high-densityDRAMs using sub-0.2μm process[会,英]/Ohji,Y.&展开更多
Y2000-62135-245 0019861采用 PECVD 氮化物用于混合信号和射频电路的高密度金属绝缘体金属电容器=High density metal insula-tor metal capacitors using PECVD Nitride for mixed sig-nal and RF circuits[会,英]/Kar-Roy,A.& Hu...Y2000-62135-245 0019861采用 PECVD 氮化物用于混合信号和射频电路的高密度金属绝缘体金属电容器=High density metal insula-tor metal capacitors using PECVD Nitride for mixed sig-nal and RF circuits[会,英]/Kar-Roy,A.& Hu,C.//1999 IEEE Proceedings of InternationaI InterconnectTechnology Conference.-245～247(EC)展开更多
Y2000-62028-853 0100093电容器电感:某些应用的关键特性=A capacitor’s in-ductance:critical property for certain applications[会,英]/Stevenson.B.& Ewell,G.//1999 IEEE 49thElectronic Components and Technology Conferen...Y2000-62028-853 0100093电容器电感:某些应用的关键特性=A capacitor’s in-ductance:critical property for certain applications[会,英]/Stevenson.B.& Ewell,G.//1999 IEEE 49thElectronic Components and Technology Conference.—853～858(PC)Y2000-62028-859 0100094薄膜解耦电容器:高频性能分析=Thin film decouplingcapacitors:a high frequency performance analysis[展开更多
文摘Y2000-62027-12 0005483利用亚0.2μm 过程的适用于高密度 DRAM 的23μC/μm<sup>2</sup>TA<sub>2</sub>O<sub>5</sub>/固化硅电容器研究=A study of Ta<sub>2</sub>O<sub>5</sub>/rugged Si Capacitor of 23μC/μm<sup>2</sup> applied to high-densityDRAMs using sub-0.2μm process[会,英]/Ohji,Y.&
文摘Y2000-62135-245 0019861采用 PECVD 氮化物用于混合信号和射频电路的高密度金属绝缘体金属电容器=High density metal insula-tor metal capacitors using PECVD Nitride for mixed sig-nal and RF circuits[会,英]/Kar-Roy,A.& Hu,C.//1999 IEEE Proceedings of InternationaI InterconnectTechnology Conference.-245～247(EC)
文摘Y2000-62028-853 0100093电容器电感:某些应用的关键特性=A capacitor’s in-ductance:critical property for certain applications[会,英]/Stevenson.B.& Ewell,G.//1999 IEEE 49thElectronic Components and Technology Conference.—853～858(PC)Y2000-62028-859 0100094薄膜解耦电容器:高频性能分析=Thin film decouplingcapacitors:a high frequency performance analysis[
