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用于单片集成真空传感器的SAR型ADC设计
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作者 李金凤 唐祯安 汪家奇 《大连理工大学学报》 EI CAS CSCD 北大核心 2009年第6期958-963,共6页
设计了一款适用于单芯片集成真空传感器的10位SAR型A/D转换器.轨至轨比较器通过并联两个互补的子比较器实现.信号采样时,比较器进行失调消除,提高电路的转换精度.电路采用0.5μm2P3M标准CMOS工艺制作.系统时钟频率为20MHz,输入电压范围... 设计了一款适用于单芯片集成真空传感器的10位SAR型A/D转换器.轨至轨比较器通过并联两个互补的子比较器实现.信号采样时,比较器进行失调消除,提高电路的转换精度.电路采用0.5μm2P3M标准CMOS工艺制作.系统时钟频率为20MHz,输入电压范围为0~3V.在1.25MS/s采样率和4.6kHz信号输入频率下,电路的信噪比为56.4dB,无杂散动态范围为69.2dB.芯片面积为2mm2.3V电源电压供电时,功耗为3.1mW.其性能已达到高线性度和低功耗的设计要求. 展开更多
关键词 逐次逼近 A/D转换器 低功耗 CMOS 单片集成真空传感器
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A Monolithic Integrated CMOS Thermal Vacuum Sensor 被引量:2
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作者 张凤田 唐祯安 +1 位作者 汪家奇 余隽 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第6期1103-1107,共5页
The monolithic integrated micro sensor is an important direction in the fields of integrated circuits and micro sensors. In this paper,a monolithic thermal vacuum sensor based on a micro-hotplate (MHP) and operating... The monolithic integrated micro sensor is an important direction in the fields of integrated circuits and micro sensors. In this paper,a monolithic thermal vacuum sensor based on a micro-hotplate (MHP) and operating under constant bias voltage conditions was designed. A new monolithic integrating mode was proposed,in which the dielectric and passiva- tion layers in standard CMOS processes were used as sensor structure layers,gate polysilicon as the sacrificial layer,and the second polysilicon layer as the sensor heating resistor. Then, the fabricating processes were designed and the monolithic thermal vacuum sensor was fabricated with a 0. 6μm mixed signal CMOS process followed by sacrificial layer etching technology. The measurement results show that the fabricated monolithic vacuum sensor can measure the pressure range of 2- 10^5 Pa and the output voltage is adjustable. 展开更多
关键词 thermal vacuum sensor monolithic integration CMOS micro hotplate
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