As one of the important components of high-effi-ciency perovskite/silicon series devices,wide-bandgap(WBG)perovskite solar cells(PSCs)have been suffering from serious carrier transport barriers and huge open-circuit v...As one of the important components of high-effi-ciency perovskite/silicon series devices,wide-bandgap(WBG)perovskite solar cells(PSCs)have been suffering from serious carrier transport barriers and huge open-circuit voltage deficit de-rived from non-radiative recombination,especial-ly at the buried interface that are often overlooked.Herein,we combined cationic and anion passiva-tion strategies via ammonium tetra-n-butyl tetrafluoroborate(TBABF_(4))pre-treating the buried interface.Theoretical calculation predicts that the tetrabutylammonium(TBA^(+))organic cations and(tetrafluoroborate)BF_(4)^(−)anions can easily interact with charged interfacial defect.Characterizations further confirm the enhance-ment of carrier transport performance and decrease in defect density upon TBABF4 pre-treat-ment.Consequently,a power conversion efficiency of 21.35%with an ultrahigh filling factor of 84.12%is obtained for 1.68 eV-WBG inverted PSCs.In addition,the device with TBABF4 pre-treatment demonstrates excellent shelf,thermal,and operational stability.展开更多
文摘As one of the important components of high-effi-ciency perovskite/silicon series devices,wide-bandgap(WBG)perovskite solar cells(PSCs)have been suffering from serious carrier transport barriers and huge open-circuit voltage deficit de-rived from non-radiative recombination,especial-ly at the buried interface that are often overlooked.Herein,we combined cationic and anion passiva-tion strategies via ammonium tetra-n-butyl tetrafluoroborate(TBABF_(4))pre-treating the buried interface.Theoretical calculation predicts that the tetrabutylammonium(TBA^(+))organic cations and(tetrafluoroborate)BF_(4)^(−)anions can easily interact with charged interfacial defect.Characterizations further confirm the enhance-ment of carrier transport performance and decrease in defect density upon TBABF4 pre-treat-ment.Consequently,a power conversion efficiency of 21.35%with an ultrahigh filling factor of 84.12%is obtained for 1.68 eV-WBG inverted PSCs.In addition,the device with TBABF4 pre-treatment demonstrates excellent shelf,thermal,and operational stability.
