设计、构建了用于扫描电化学显微镜原位检测Li^+/Na^+电池及室温液态金属电池反应过程的电解池,成功用于电池正极界面反应动力学检测。测得氧化还原电介质二茂铁在LiFePO4、Li Co O2和Na3V2(PO4)3三种不同正极界面反应电子转移速率常数(...设计、构建了用于扫描电化学显微镜原位检测Li^+/Na^+电池及室温液态金属电池反应过程的电解池,成功用于电池正极界面反应动力学检测。测得氧化还原电介质二茂铁在LiFePO4、Li Co O2和Na3V2(PO4)3三种不同正极界面反应电子转移速率常数(kf)分别为1.06×10^-3cm/s、1.47×10^-3cm/s和9.09×10^-4cm/s。实时监测了三种不同碳含量Na3V2(PO4)3正极界面微区(80×80μm2)储钠活性位点分布,探索了室温Li||Ga电池液态金属正极界面锂化反应过程。表明基于扫描电化学显微镜技术的原位电池分析方法具有极高的分辨率和灵敏度,且对不同电池体系均可实现实时原位高分辨动力学检测。为研究Li^+/Na^+电池及液态金属电池等极具应用潜力的电化学储能技术提供了一种原位无损检测方法。展开更多
The growth behavior of the complex intermetallic compounds(IMCs)formed at the interface of Cu/SnPbInBiSb high entropy alloy solder joints was explored.The growth inhibition mechanism of the IMCs at the Cu/SnPbInBiSb s...The growth behavior of the complex intermetallic compounds(IMCs)formed at the interface of Cu/SnPbInBiSb high entropy alloy solder joints was explored.The growth inhibition mechanism of the IMCs at the Cu/SnPbInBiSb solid−liquid reaction interface was revealed.The results showed that the growth rate of the complex IMCs obviously decreased at the Cu/SnPbInBiSb solid−liquid reaction interface.The maximum average thickness of IMCs only reached up to 1.66μm after reflowing at 200℃for 10 min.The mechanism for the slow growth of the complex IMCs was analyzed into three aspects.Firstly,the high entropy of the liquid SnPbInBiSb alloy reduced the growth rate of the complex IMCs.Secondly,the distorted lattice of complex IMCs restrained the diffusion of Cu atoms.Lastly,the higher activation energy(40.9 kJ/mol)of Cu/SnPbInBiSb solid−liquid interfacial reaction essentially impeded the growth of the complex IMCs.展开更多
Cu/Al laminar composite was prepared by dipping Zn layer and then electroplating Cu thick layer on pure Al sheet.During annealing the Cu/Al composites at temperature from 473 to 673 K, the Cu/Al interfacial diffusion ...Cu/Al laminar composite was prepared by dipping Zn layer and then electroplating Cu thick layer on pure Al sheet.During annealing the Cu/Al composites at temperature from 473 to 673 K, the Cu/Al interfacial diffusion and reaction and itskinetics and also the electrical resistivity of the composites were studied. The results show that no Cu?Al IMC layer is observable asthe composites are annealed at 473 K for time till 360 h, indicating that the Zn intermediate layer can effectively suppress the Cu/Alinterfacial diffusion. However, as the composites are annealed at 573 K and above, Zn atoms in the Zn layer dissolve into the Culayer. Tri-layered reaction product of CuAl2/CuAl/Cu9Al4 then forms from the Al side to the Cu side. The IMC layer follows thediffusion-controlled growth kinetics. Electrical resistivity of the Cu/Al composites increases with the increase of the annealingtemperature and time.展开更多
Adsorption reactions between surfaces of nanodiamond and nanosilica with diameter of 100 nm prepared as suspension solutions of 0.25μg/μL and lysozyme molecule with different concentrations of 7 mmol/L PPBS at pH=7,...Adsorption reactions between surfaces of nanodiamond and nanosilica with diameter of 100 nm prepared as suspension solutions of 0.25μg/μL and lysozyme molecule with different concentrations of 7 mmol/L PPBS at pH=7, 9, 11, and 13 have been investigated by fluores- cence spectroscopy. Adsorption reaction constants and coverages of lysozyme with different concentrations of 0-1000 nmol/L under the influences of different pH values have been ob- tained. Helicities and conformations of the adsorbed lysozyme molecules, free spaces of every adsorbed lysozyme molecule on the surfaces of nanopartieles at different concentrations and pH values have been deduced and discussed. The highest adsorption capabilities for both sys- tems and conformational efficiency of the adsorbed lysozyme molecule at pH=13 have been obtained. Lysozyme molecules can be prepared, adsorbed and carried with optimal activity and helicity, with 2 and 10 mg/m2 on unit nanosurface, 130 and 150 mg/g with respect to the weight of nanoparticle, within the linear regions of the coverages at around 150-250 nmol/L and four pH values for nanodiamond and nanosilica, respectively. They can be prepared in the tightest packed form, with 20 and 55 mg/m2, 810-1680 and 580-1100 mg/g at threshold concentrations and four pH values for nanodiamond and nanosilica, respectively.展开更多
The AuSn20/Ni joints were prepared by the reflow soldering technology and then annealed at solid-state temperature to form diffusion couples.The interfacial reactions and the growth kinetics of the intermetallic compo...The AuSn20/Ni joints were prepared by the reflow soldering technology and then annealed at solid-state temperature to form diffusion couples.The interfacial reactions and the growth kinetics of the intermetallic compounds(IMC)at the AuSn20/Ni soldering interface were investigated by scanning electron microscopy(SEM)and electron probe microanalysis(EPMA).The results show that,the(Ni,Au)3Sn2phases are formed at the AuSn20/Ni interface after soldering at583K.The thickness l of the IMC layer monotonically increases with increasing annealing time t according to the relationship l=k(t/t0)n,where the exponent n is0.527,0.476and0.471for393,433and473K annealing,respectively.This indicates that the volume diffusion contributes to the growth of the IMC layer at the AuSn20/Ni interface at solid-sate temperature.The pre-exponential factor K0=1.23×10?7m2/s and the activation enthalpy QK=81.8kJ/mol are obtained from the results of the parabolic coefficient K by a least-squares method.展开更多
A comprehensive review on interfacial reactions to form silicides between metal and Si nanowire or wafer is given.Formation of silicide contacts on Si wafers or Si nanowires is a building block needed in making curren...A comprehensive review on interfacial reactions to form silicides between metal and Si nanowire or wafer is given.Formation of silicide contacts on Si wafers or Si nanowires is a building block needed in making current-based Si devices.Thus,the microstructure control of silicide formation on the basis of kinetics of nucleation and growth has relevant applications in microelectronic technology.Repeating events of homogeneous nucleation of epitaxial silicides of Ni and Co on Si in atomic layer reaction is presented.The chemical effort on intrinsic diffusivities in diffusion-controlled layer-typed intermetallic compound growth of Ni2Si is analyzed.展开更多
文摘设计、构建了用于扫描电化学显微镜原位检测Li^+/Na^+电池及室温液态金属电池反应过程的电解池,成功用于电池正极界面反应动力学检测。测得氧化还原电介质二茂铁在LiFePO4、Li Co O2和Na3V2(PO4)3三种不同正极界面反应电子转移速率常数(kf)分别为1.06×10^-3cm/s、1.47×10^-3cm/s和9.09×10^-4cm/s。实时监测了三种不同碳含量Na3V2(PO4)3正极界面微区(80×80μm2)储钠活性位点分布,探索了室温Li||Ga电池液态金属正极界面锂化反应过程。表明基于扫描电化学显微镜技术的原位电池分析方法具有极高的分辨率和灵敏度,且对不同电池体系均可实现实时原位高分辨动力学检测。为研究Li^+/Na^+电池及液态金属电池等极具应用潜力的电化学储能技术提供了一种原位无损检测方法。
基金supported by the National Natural Science Foundation of China (No.U2241223)the Heilongjiang Touyan Innovation Team Program,China (No.HITTY-20190013)the Fundamental Research Funds for the Central Universities,China (No.AUEA5770400622)。
文摘The growth behavior of the complex intermetallic compounds(IMCs)formed at the interface of Cu/SnPbInBiSb high entropy alloy solder joints was explored.The growth inhibition mechanism of the IMCs at the Cu/SnPbInBiSb solid−liquid reaction interface was revealed.The results showed that the growth rate of the complex IMCs obviously decreased at the Cu/SnPbInBiSb solid−liquid reaction interface.The maximum average thickness of IMCs only reached up to 1.66μm after reflowing at 200℃for 10 min.The mechanism for the slow growth of the complex IMCs was analyzed into three aspects.Firstly,the high entropy of the liquid SnPbInBiSb alloy reduced the growth rate of the complex IMCs.Secondly,the distorted lattice of complex IMCs restrained the diffusion of Cu atoms.Lastly,the higher activation energy(40.9 kJ/mol)of Cu/SnPbInBiSb solid−liquid interfacial reaction essentially impeded the growth of the complex IMCs.
基金Project(2012QTXM0751)supported by the Scientific and Technological Research Project,State Grid,China
文摘Cu/Al laminar composite was prepared by dipping Zn layer and then electroplating Cu thick layer on pure Al sheet.During annealing the Cu/Al composites at temperature from 473 to 673 K, the Cu/Al interfacial diffusion and reaction and itskinetics and also the electrical resistivity of the composites were studied. The results show that no Cu?Al IMC layer is observable asthe composites are annealed at 473 K for time till 360 h, indicating that the Zn intermediate layer can effectively suppress the Cu/Alinterfacial diffusion. However, as the composites are annealed at 573 K and above, Zn atoms in the Zn layer dissolve into the Culayer. Tri-layered reaction product of CuAl2/CuAl/Cu9Al4 then forms from the Al side to the Cu side. The IMC layer follows thediffusion-controlled growth kinetics. Electrical resistivity of the Cu/Al composites increases with the increase of the annealingtemperature and time.
文摘Adsorption reactions between surfaces of nanodiamond and nanosilica with diameter of 100 nm prepared as suspension solutions of 0.25μg/μL and lysozyme molecule with different concentrations of 7 mmol/L PPBS at pH=7, 9, 11, and 13 have been investigated by fluores- cence spectroscopy. Adsorption reaction constants and coverages of lysozyme with different concentrations of 0-1000 nmol/L under the influences of different pH values have been ob- tained. Helicities and conformations of the adsorbed lysozyme molecules, free spaces of every adsorbed lysozyme molecule on the surfaces of nanopartieles at different concentrations and pH values have been deduced and discussed. The highest adsorption capabilities for both sys- tems and conformational efficiency of the adsorbed lysozyme molecule at pH=13 have been obtained. Lysozyme molecules can be prepared, adsorbed and carried with optimal activity and helicity, with 2 and 10 mg/m2 on unit nanosurface, 130 and 150 mg/g with respect to the weight of nanoparticle, within the linear regions of the coverages at around 150-250 nmol/L and four pH values for nanodiamond and nanosilica, respectively. They can be prepared in the tightest packed form, with 20 and 55 mg/m2, 810-1680 and 580-1100 mg/g at threshold concentrations and four pH values for nanodiamond and nanosilica, respectively.
基金Project(JPPT-125-GH-039)supported by the Ministry of Science and Technology of ChinaProject(Z109021567)supported by Fundamental Research Funds for the Central Universities,China
文摘The AuSn20/Ni joints were prepared by the reflow soldering technology and then annealed at solid-state temperature to form diffusion couples.The interfacial reactions and the growth kinetics of the intermetallic compounds(IMC)at the AuSn20/Ni soldering interface were investigated by scanning electron microscopy(SEM)and electron probe microanalysis(EPMA).The results show that,the(Ni,Au)3Sn2phases are formed at the AuSn20/Ni interface after soldering at583K.The thickness l of the IMC layer monotonically increases with increasing annealing time t according to the relationship l=k(t/t0)n,where the exponent n is0.527,0.476and0.471for393,433and473K annealing,respectively.This indicates that the volume diffusion contributes to the growth of the IMC layer at the AuSn20/Ni interface at solid-sate temperature.The pre-exponential factor K0=1.23×10?7m2/s and the activation enthalpy QK=81.8kJ/mol are obtained from the results of the parabolic coefficient K by a least-squares method.
文摘A comprehensive review on interfacial reactions to form silicides between metal and Si nanowire or wafer is given.Formation of silicide contacts on Si wafers or Si nanowires is a building block needed in making current-based Si devices.Thus,the microstructure control of silicide formation on the basis of kinetics of nucleation and growth has relevant applications in microelectronic technology.Repeating events of homogeneous nucleation of epitaxial silicides of Ni and Co on Si in atomic layer reaction is presented.The chemical effort on intrinsic diffusivities in diffusion-controlled layer-typed intermetallic compound growth of Ni2Si is analyzed.
