利用各向异性的湿法刻蚀和侧墙隔离技术实现了发射极金属和基极金属的自对准 ,采用该自对准技术成功地研制出了自对准结构的 Al Ga As/ Ga As异质结双极晶体管 ,器件直流电流增益大于 2 0 ,电流增益截止频率 f T 大于30 GHz,最高振荡频...利用各向异性的湿法刻蚀和侧墙隔离技术实现了发射极金属和基极金属的自对准 ,采用该自对准技术成功地研制出了自对准结构的 Al Ga As/ Ga As异质结双极晶体管 ,器件直流电流增益大于 2 0 ,电流增益截止频率 f T 大于30 GHz,最高振荡频率 fmax大于 5 0 GHz,连续波功率测量表明 :在 1d B增益压缩时 ,单指 HBT可以提供 10 0 m W输出功率 ,对应的功率密度为 6 .6 7W/ m m,功率饱和时最大输出功率 112 m W,对应功率密度为 7.48W/ m m,功率附加效率为 6 7%展开更多
A comprehensive way to design a sub 50nm SADG MOSFET with the ability of being fabricated by improved CMOS technique is described.Under this way,the gate length and thickness of Si island of DG device show many diffe...A comprehensive way to design a sub 50nm SADG MOSFET with the ability of being fabricated by improved CMOS technique is described.Under this way,the gate length and thickness of Si island of DG device show many different scaling limits for various elements.Meanwhile,the spacer insulator shows a kind of width thickness on device drain current and circuit speed.A model about that effect is developed and offers design consideration for future.A new design of channel doping profile,called SCD,is also discussed here in detail.The DG device with SCD can achieve a good balance between the volume inversion operation mode and the control of V th .Finally,a guideline to make a SADG MOSFET is presented.展开更多
文摘利用各向异性的湿法刻蚀和侧墙隔离技术实现了发射极金属和基极金属的自对准 ,采用该自对准技术成功地研制出了自对准结构的 Al Ga As/ Ga As异质结双极晶体管 ,器件直流电流增益大于 2 0 ,电流增益截止频率 f T 大于30 GHz,最高振荡频率 fmax大于 5 0 GHz,连续波功率测量表明 :在 1d B增益压缩时 ,单指 HBT可以提供 10 0 m W输出功率 ,对应的功率密度为 6 .6 7W/ m m,功率饱和时最大输出功率 112 m W,对应功率密度为 7.48W/ m m,功率附加效率为 6 7%
文摘A comprehensive way to design a sub 50nm SADG MOSFET with the ability of being fabricated by improved CMOS technique is described.Under this way,the gate length and thickness of Si island of DG device show many different scaling limits for various elements.Meanwhile,the spacer insulator shows a kind of width thickness on device drain current and circuit speed.A model about that effect is developed and offers design consideration for future.A new design of channel doping profile,called SCD,is also discussed here in detail.The DG device with SCD can achieve a good balance between the volume inversion operation mode and the control of V th .Finally,a guideline to make a SADG MOSFET is presented.
