Multilayer gallium and aluminum doped ZnO （GZO/AZO） films were fabricated by alternative deposition of Ga-doped zinc oxide（GZO） and Al-doped zinc oxide（AZO） thin film by using pulsed laser deposition（PLD） proc...Multilayer gallium and aluminum doped ZnO （GZO/AZO） films were fabricated by alternative deposition of Ga-doped zinc oxide（GZO） and Al-doped zinc oxide（AZO） thin film by using pulsed laser deposition（PLD） process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO （1：1） thin film deposited at 400 ~C shows the electrical resistivity of 4.18 x 10 4 ~.cm, an electron concentration of 7.5 x 1020/cm3, and carrier mobility of 25.4 cm2/（V.s）. The optical transmittances of GZO/AZO thin films are over 85%. The optical band gap energy of GZO/AZO thin films linearly decreases with increasing the AI ratio.展开更多
基金supported by the Yeungnam University Research Grants in 2009
文摘Multilayer gallium and aluminum doped ZnO （GZO/AZO） films were fabricated by alternative deposition of Ga-doped zinc oxide（GZO） and Al-doped zinc oxide（AZO） thin film by using pulsed laser deposition（PLD） process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO （1：1） thin film deposited at 400 ~C shows the electrical resistivity of 4.18 x 10 4 ~.cm, an electron concentration of 7.5 x 1020/cm3, and carrier mobility of 25.4 cm2/（V.s）. The optical transmittances of GZO/AZO thin films are over 85%. The optical band gap energy of GZO/AZO thin films linearly decreases with increasing the AI ratio.
