TN248.4 2000010191自锁定半导体激光器中强度压缩及位相噪声的减少=Observation of intensity squeezing and largephase noise reduction in self-locked semiconductorlasers[刊,中]/张天才,李廷鱼,谢常德,彭堃墀(山西大学光电研究所...TN248.4 2000010191自锁定半导体激光器中强度压缩及位相噪声的减少=Observation of intensity squeezing and largephase noise reduction in self-locked semiconductorlasers[刊,中]/张天才,李廷鱼,谢常德,彭堃墀(山西大学光电研究所,山西,太原(030006))//物理学报.—1998,47(9).—1498-1502采用外部F-P腔自锁定单模量子阱半导体激光器观察到强度噪声的压缩现象,并同时大幅度降低了位相起伏。在35 MHz附近观察到19.3%的强度压缩,对应激光输出的压缩度为37.8%,在9 KHz-100 MHz范围内观察到约3个数量级的位相噪声降低获得了近最小测不准态。图5参10(严寒)展开更多
SPIE-Vol.3626 01002131999年 SPIE 会议录.卷3626:半导体激光器的测试、封装、可靠性与应用(4)=1999 Proceedings of SPIE.Vol.3626:testing,packaging,reliability,and applica-tions of senticonducto lasers Ⅳ[会,英]/SPIE-the Int...SPIE-Vol.3626 01002131999年 SPIE 会议录.卷3626:半导体激光器的测试、封装、可靠性与应用(4)=1999 Proceedings of SPIE.Vol.3626:testing,packaging,reliability,and applica-tions of senticonducto lasers Ⅳ[会,英]/SPIE-the Inter-national Society for Optical Engineering.—999.—212P.(PC)本会议录收集了于1999年1月28日在美国加州圣何塞召开的半导体激光器测试、封装、可靠性与应用专题讨论会上发表的28篇论文。展开更多
Q631 98010217一种五波长半导体激光生物组织辐照仪=An instrumentwith five wavelength LDs used forirradiating biological tissue[刊,中]/陈荣,周川钊,谢树森,林棋榕（福建师范大学激光研究所.福建,福州（350007））,霍玉晶（清华...Q631 98010217一种五波长半导体激光生物组织辐照仪=An instrumentwith five wavelength LDs used forirradiating biological tissue[刊,中]/陈荣,周川钊,谢树森,林棋榕（福建师范大学激光研究所.福建,福州（350007））,霍玉晶（清华大学电子工程系.北京（100084））//光子学报.-1997,26（4）.-336-339采用GaAlAs单量子阱半导体激光器和LD泵浦的Nd:YVO<sub>4</sub>-KTP倍频激光器等研制了国内首台可从光导纤维输出5种波长的半导体激光生物组织辐照仪,该仪器已在激光生物医学领域投入应用。展开更多
TN241 99031508Nd:YAG色心调制晶体消除混沌的理论与实验研究=Research on the theory and experiment of eliminatingchaos by Nd:YAG color center crystal[刊,中]/任建华,沈柯(长春光机学院.吉林,长春(130022))//长春光学精密机械学...TN241 99031508Nd:YAG色心调制晶体消除混沌的理论与实验研究=Research on the theory and experiment of eliminatingchaos by Nd:YAG color center crystal[刊,中]/任建华,沈柯(长春光机学院.吉林,长春(130022))//长春光学精密机械学院学报.—1998,21(2).展开更多
A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers （VCSELs）. The VCSELs with open-annulus-distributed holes have a light output power 1.34 times higher...A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers （VCSELs）. The VCSELs with open-annulus-distributed holes have a light output power 1.34 times higher than those with ring trenches. The 14μm-aperture devices have a light output power higher than 10mW and have a maximum of 12.48mW at 29.6mA. In addition,open-annulus-distributed holes offer bridges for current injection,so the connecting Ti-Au metal between the ohmic contact and bonding pad does not have to cross the ring trench, and it therefore would not cause the connecting metal to be broken. These VCSELs also show high-temperature operation capabilities,and they have a maximum output power of 8mW even at an operation temperature of up to 60℃.展开更多
To achieve high optical power as well as low vertical divergence angle,a new kind of optim ized large opti- cal cavity (L OC) structure is applied to a ridge waveguide 980 nm In Ga As/ Ga As/ Al Ga As m ulti- quantum...To achieve high optical power as well as low vertical divergence angle,a new kind of optim ized large opti- cal cavity (L OC) structure is applied to a ridge waveguide 980 nm In Ga As/ Ga As/ Al Ga As m ulti- quantum well laser.The optical power density in the waveguide is successfully reduced.The maxim um output power is more than 40 0 m W with a slope efficiency of 0 .89W/ A and the far- field vertical divergence angle is lowered to 2 3°.展开更多
TN364.2 99031796硅光电二极管陷阱辐射定标研究=Calibration studyof trap radiation of Si photodiode[刊,中]/吴浩宇,王光远,荀毓龙(中科院安徽光机所.安徽,合肥(230031))//应用光学.—1998,19(2).-1-4介绍CryoRadll低温绝对辐射计(H...TN364.2 99031796硅光电二极管陷阱辐射定标研究=Calibration studyof trap radiation of Si photodiode[刊,中]/吴浩宇,王光远,荀毓龙(中科院安徽光机所.安徽,合肥(230031))//应用光学.—1998,19(2).-1-4介绍CryoRadll低温绝对辐射计(HACR),给出通过激光功率控制器(LPC)展开更多
InG sP/G s SCH SQW lasers have been prepared by LP-MOCVD. The dependence of t hreshold current density on cavity length was explained. Laser diodes are char acterized by the output power of 1 W to 2 W, threshold curre...InG sP/G s SCH SQW lasers have been prepared by LP-MOCVD. The dependence of t hreshold current density on cavity length was explained. Laser diodes are char acterized by the output power of 1 W to 2 W, threshold current density ( J th ) of 330 A/cm 2 to 450 A/cm 2 and external differe ntial quantum efficiency ( η d) of 35% to 75%, and these characteristics ar e in good agreement with the designed requirement.展开更多
We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted ...We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array.The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum(FWHM) of less than 3°,and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°.展开更多
文摘TN248.4 2000010191自锁定半导体激光器中强度压缩及位相噪声的减少=Observation of intensity squeezing and largephase noise reduction in self-locked semiconductorlasers[刊,中]/张天才,李廷鱼,谢常德,彭堃墀(山西大学光电研究所,山西,太原(030006))//物理学报.—1998,47(9).—1498-1502采用外部F-P腔自锁定单模量子阱半导体激光器观察到强度噪声的压缩现象,并同时大幅度降低了位相起伏。在35 MHz附近观察到19.3%的强度压缩,对应激光输出的压缩度为37.8%,在9 KHz-100 MHz范围内观察到约3个数量级的位相噪声降低获得了近最小测不准态。图5参10(严寒)
文摘SPIE-Vol.3626 01002131999年 SPIE 会议录.卷3626:半导体激光器的测试、封装、可靠性与应用(4)=1999 Proceedings of SPIE.Vol.3626:testing,packaging,reliability,and applica-tions of senticonducto lasers Ⅳ[会,英]/SPIE-the Inter-national Society for Optical Engineering.—999.—212P.(PC)本会议录收集了于1999年1月28日在美国加州圣何塞召开的半导体激光器测试、封装、可靠性与应用专题讨论会上发表的28篇论文。
文摘Q631 98010217一种五波长半导体激光生物组织辐照仪=An instrumentwith five wavelength LDs used forirradiating biological tissue[刊,中]/陈荣,周川钊,谢树森,林棋榕（福建师范大学激光研究所.福建,福州（350007））,霍玉晶（清华大学电子工程系.北京（100084））//光子学报.-1997,26（4）.-336-339采用GaAlAs单量子阱半导体激光器和LD泵浦的Nd:YVO<sub>4</sub>-KTP倍频激光器等研制了国内首台可从光导纤维输出5种波长的半导体激光生物组织辐照仪,该仪器已在激光生物医学领域投入应用。
文摘TN241 99031508Nd:YAG色心调制晶体消除混沌的理论与实验研究=Research on the theory and experiment of eliminatingchaos by Nd:YAG color center crystal[刊,中]/任建华,沈柯(长春光机学院.吉林,长春(130022))//长春光学精密机械学院学报.—1998,21(2).
文摘A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers （VCSELs）. The VCSELs with open-annulus-distributed holes have a light output power 1.34 times higher than those with ring trenches. The 14μm-aperture devices have a light output power higher than 10mW and have a maximum of 12.48mW at 29.6mA. In addition,open-annulus-distributed holes offer bridges for current injection,so the connecting Ti-Au metal between the ohmic contact and bonding pad does not have to cross the ring trench, and it therefore would not cause the connecting metal to be broken. These VCSELs also show high-temperature operation capabilities,and they have a maximum output power of 8mW even at an operation temperature of up to 60℃.
文摘To achieve high optical power as well as low vertical divergence angle,a new kind of optim ized large opti- cal cavity (L OC) structure is applied to a ridge waveguide 980 nm In Ga As/ Ga As/ Al Ga As m ulti- quantum well laser.The optical power density in the waveguide is successfully reduced.The maxim um output power is more than 40 0 m W with a slope efficiency of 0 .89W/ A and the far- field vertical divergence angle is lowered to 2 3°.
文摘TN364.2 99031796硅光电二极管陷阱辐射定标研究=Calibration studyof trap radiation of Si photodiode[刊,中]/吴浩宇,王光远,荀毓龙(中科院安徽光机所.安徽,合肥(230031))//应用光学.—1998,19(2).-1-4介绍CryoRadll低温绝对辐射计(HACR),给出通过激光功率控制器(LPC)
文摘InG sP/G s SCH SQW lasers have been prepared by LP-MOCVD. The dependence of t hreshold current density on cavity length was explained. Laser diodes are char acterized by the output power of 1 W to 2 W, threshold current density ( J th ) of 330 A/cm 2 to 450 A/cm 2 and external differe ntial quantum efficiency ( η d) of 35% to 75%, and these characteristics ar e in good agreement with the designed requirement.
文摘We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array.The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum(FWHM) of less than 3°,and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°.
