Given the demand for constantly scaling micro- electronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf（Zr）O2, in order to minimize current...Given the demand for constantly scaling micro- electronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf（Zr）O2, in order to minimize current leakage through dielectric thin film. However, upon interfacing with high dielectric constant （high-κ） dielectrics, the electron mobility in the conventional Si channel degrades due to Coulomb scattering, surface-roughness scattering, remotephonon scattering, and dielectric-charge trapping.Ⅲ-Ⅴ and Ge are two promising candidates with superior mobility over Si. Nevertheless, Hf（Zr）O2/Ⅲ-Ⅴ（Ge） has much more complicated interface bonding than Si-based interfaces. Successful fabrication of a high-quality device critically depends on understanding and engineering the bonding configurations at Hf（Zr）O2/Ⅲ-Ⅴ（Ge） interfaces for the optimal design of device interfaces. Thus, an accurate atomic insight into the interface bonding and mechanism of interface gap states formation becomes essential. Here, we utilize first- principle calculations to investigate the interface between HfO2 and GaAs. Our study shows that As--As dimer bonding, Ga partial oxidation （between 3＋ and 1＋） and Ga- dangling bonds constitute the major contributions to gap states. These findings provide insightful guidance for optimum interface passivation.展开更多
Relaxor ferroelectric polymers display great potential in capacitor dielectric applications because of their excellent flexibility,light weight,and high dielectric constant.However,their electrical energy storage capa...Relaxor ferroelectric polymers display great potential in capacitor dielectric applications because of their excellent flexibility,light weight,and high dielectric constant.However,their electrical energy storage capacity is limited by their high conduction losses and low dielectric strength,which primarily originates from the impact-ionization-induced electron multiplication,low mechanical modulus,and low thermal conductivity of the dielectric polymers.Here a matrix free strategy is developed to effectively suppress electron multiplication effects and to enhance mechanical modulus and thermal conductivity of a dielectric polymer,which involves the chemical adsorption of an electron barrier layer on boron nitride nanosheet surfaces by chemically adsorbing an amino-containing polymer.A dramatic decrease of leakage current(from 2.4×10^(-6)to 1.1×10^(-7)A cm^(-2)at 100 MV m^(-1))and a substantial increase of breakdown strength(from 340 to 742 MV m^(-1))were achieved in the nanocompostes,which result in a remarkable increase of discharge energy density(from 5.2 to 31.8 J cm^(-3)).Moreover,the dielectric strength of the nanocomposites suffering an electrical breakdown could be restored to 88%of the original value.This study demonstrates a rational design for fabricating dielectric polymer nanocomposites with greatly enhanced electric energy storage capacity.展开更多
基金supported by the National Natural Science Foundation of China (11304161, 11104148, and 51171082)the Tianjin Natural Science Foundation (13JCYBJC41100 and 14JCZDJC37700)+3 种基金the National Basic Research Program of China (973 Program) (2014CB931703)Specialized Research Fund for the Doctoral Program of Higher Education (20110031110034)the Fundamental Research Funds for the Central Universitiessupported by the Global Frontier Center for Multiscale Energy Systems at Seoul National University in Korea
文摘Given the demand for constantly scaling micro- electronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf（Zr）O2, in order to minimize current leakage through dielectric thin film. However, upon interfacing with high dielectric constant （high-κ） dielectrics, the electron mobility in the conventional Si channel degrades due to Coulomb scattering, surface-roughness scattering, remotephonon scattering, and dielectric-charge trapping.Ⅲ-Ⅴ and Ge are two promising candidates with superior mobility over Si. Nevertheless, Hf（Zr）O2/Ⅲ-Ⅴ（Ge） has much more complicated interface bonding than Si-based interfaces. Successful fabrication of a high-quality device critically depends on understanding and engineering the bonding configurations at Hf（Zr）O2/Ⅲ-Ⅴ（Ge） interfaces for the optimal design of device interfaces. Thus, an accurate atomic insight into the interface bonding and mechanism of interface gap states formation becomes essential. Here, we utilize first- principle calculations to investigate the interface between HfO2 and GaAs. Our study shows that As--As dimer bonding, Ga partial oxidation （between 3＋ and 1＋） and Ga- dangling bonds constitute the major contributions to gap states. These findings provide insightful guidance for optimum interface passivation.
基金supported by the National Natural Science Foundation of China(52003153,51877132 and 52002300)Program of Shanghai Academic Research Leader(21XD1401600)+1 种基金State Key Laboratory of Electrical Insulation and Power Equipment(EIPE20203,EIPE21206)the Major Research Plan of National Natural Science Foundation of China(92066103)。
文摘Relaxor ferroelectric polymers display great potential in capacitor dielectric applications because of their excellent flexibility,light weight,and high dielectric constant.However,their electrical energy storage capacity is limited by their high conduction losses and low dielectric strength,which primarily originates from the impact-ionization-induced electron multiplication,low mechanical modulus,and low thermal conductivity of the dielectric polymers.Here a matrix free strategy is developed to effectively suppress electron multiplication effects and to enhance mechanical modulus and thermal conductivity of a dielectric polymer,which involves the chemical adsorption of an electron barrier layer on boron nitride nanosheet surfaces by chemically adsorbing an amino-containing polymer.A dramatic decrease of leakage current(from 2.4×10^(-6)to 1.1×10^(-7)A cm^(-2)at 100 MV m^(-1))and a substantial increase of breakdown strength(from 340 to 742 MV m^(-1))were achieved in the nanocompostes,which result in a remarkable increase of discharge energy density(from 5.2 to 31.8 J cm^(-3)).Moreover,the dielectric strength of the nanocomposites suffering an electrical breakdown could be restored to 88%of the original value.This study demonstrates a rational design for fabricating dielectric polymer nanocomposites with greatly enhanced electric energy storage capacity.
