High performance can be obtained for the integrated power electronics module（IPEM） by using a three-dimensional packaging structure instead of a planar structure. A three- dimensional packaged half bridge-IPEM （HB-...High performance can be obtained for the integrated power electronics module（IPEM） by using a three-dimensional packaging structure instead of a planar structure. A three- dimensional packaged half bridge-IPEM （HB-IPEM）, consisting of two chip scale packaged MOSFETs and the corresponding gate driver and protection circuits, is fabricated at the laboratory. The reliability of the IPEM is controlled from the shape design of solder joints and the control of assembly process parameters. The parasitic parameters are extracted using Agilent 4395A impedance analyzer for building the parasitic parameter model of the HB- IPEM. A 12 V/3 A output synchronous rectifier Buck converter using the HB-IPEM is built to test the electrical performance of the HB-IPEM. Low voltage spikes on two MOSFETs illustrate that the three-dimensional package of the HB-IPEM can decrease parasitic inductance. Temperature distribution simulation results of the HB-IPEM using FLOTHERM are given. Heat dissipation of the solder joints makes the peak junction temperature of the chip drop obviously. The package realizes three-dimensional heat dissipation and has better thermal management.展开更多
The interconnect temperature of very large scale integration（VLSI） circuits keeps rising due to self-heating and substrate temperature, which can increase the delay and power dissipation of interconnect wires. The t...The interconnect temperature of very large scale integration（VLSI） circuits keeps rising due to self-heating and substrate temperature, which can increase the delay and power dissipation of interconnect wires. The thermal vias are regarded as a promising method to improve the temperature performance of VLSI circuits. In this paper, the extra thermal vias were used to decrease the delay and power dissipation of interconnect wires of VLSI circuits. Two analytical models were presented for interconnect temperature, delay and power dissipation with adding extra dummy thermal vias. The influence of the number of thermal vias on the delay and power dissipation of interconnect wires was analyzed and the optimal via separation distance was investigated. The experimental results show that the adding extra dummy thermal vias can reduce the interconnect average temperature, maximum temperature, delay and power dissipation. Moreover, this method is also suitable for clock signal wires with a large root mean square current.展开更多
This paper proposes a low-power MOS current mode logic （MCML） circuit with sleep-transistor to reduce the leakage current. The sleep-transistor is used to high-threshold voltage transistor to minimize the leakage cu...This paper proposes a low-power MOS current mode logic （MCML） circuit with sleep-transistor to reduce the leakage current. The sleep-transistor is used to high-threshold voltage transistor to minimize the leakage current. The 16× 16 bit parallel multiplier is designed with the proposed technology. Comparing with the previous MCML circuit, the circuit achieves the reduction of the power consumption in sleep mode by 1/258. This circuit is designed with Samsung 0.35 um complementary metal oxide semiconductor （CMOS） process. The validity and effectiveness are verified through the HSPICE simulation.展开更多
Triple-threshold CMOS technique provides the transistors that have low-, normal-, and high-threshold voltage. This paper describes a low-power carry look-ahead adder with triple-threshold CMOS technique. While the low...Triple-threshold CMOS technique provides the transistors that have low-, normal-, and high-threshold voltage. This paper describes a low-power carry look-ahead adder with triple-threshold CMOS technique. While the low-threshold voltage transistors are used to reduce the propagation delay time in the critical path, the high-threshold voltage transistors are used to reduce the power consumption in the shortest path. Comparing with the conventional CMOS circuit, the circuit is achieved to reduce the power consumption by 14.71% and the power-delay-product by 16.11%. This circuit is designed with Samsung 0.35 um CMOS process. The validity and effectiveness are verified through the HSPICE simulation.展开更多
基金Fok Ying Tung Education Foundation(No.91058)the Natural Science Foundation of High Education Institutions of Jiangsu Province(No.08KJD470004)Qing Lan Project of Jiangsu Province of 2008
文摘High performance can be obtained for the integrated power electronics module（IPEM） by using a three-dimensional packaging structure instead of a planar structure. A three- dimensional packaged half bridge-IPEM （HB-IPEM）, consisting of two chip scale packaged MOSFETs and the corresponding gate driver and protection circuits, is fabricated at the laboratory. The reliability of the IPEM is controlled from the shape design of solder joints and the control of assembly process parameters. The parasitic parameters are extracted using Agilent 4395A impedance analyzer for building the parasitic parameter model of the HB- IPEM. A 12 V/3 A output synchronous rectifier Buck converter using the HB-IPEM is built to test the electrical performance of the HB-IPEM. Low voltage spikes on two MOSFETs illustrate that the three-dimensional package of the HB-IPEM can decrease parasitic inductance. Temperature distribution simulation results of the HB-IPEM using FLOTHERM are given. Heat dissipation of the solder joints makes the peak junction temperature of the chip drop obviously. The package realizes three-dimensional heat dissipation and has better thermal management.
基金Supported by the Guangdong Provincial Natural Science Foundation of China(2014A030313441)the Guangzhou Science and Technology Project(201510010169)+1 种基金the Guangdong Province Science and Technology Project(2016B090918071,2014A040401076)the National Natural Science Foundation of China(61072028)
文摘The interconnect temperature of very large scale integration（VLSI） circuits keeps rising due to self-heating and substrate temperature, which can increase the delay and power dissipation of interconnect wires. The thermal vias are regarded as a promising method to improve the temperature performance of VLSI circuits. In this paper, the extra thermal vias were used to decrease the delay and power dissipation of interconnect wires of VLSI circuits. Two analytical models were presented for interconnect temperature, delay and power dissipation with adding extra dummy thermal vias. The influence of the number of thermal vias on the delay and power dissipation of interconnect wires was analyzed and the optimal via separation distance was investigated. The experimental results show that the adding extra dummy thermal vias can reduce the interconnect average temperature, maximum temperature, delay and power dissipation. Moreover, this method is also suitable for clock signal wires with a large root mean square current.
文摘This paper proposes a low-power MOS current mode logic （MCML） circuit with sleep-transistor to reduce the leakage current. The sleep-transistor is used to high-threshold voltage transistor to minimize the leakage current. The 16× 16 bit parallel multiplier is designed with the proposed technology. Comparing with the previous MCML circuit, the circuit achieves the reduction of the power consumption in sleep mode by 1/258. This circuit is designed with Samsung 0.35 um complementary metal oxide semiconductor （CMOS） process. The validity and effectiveness are verified through the HSPICE simulation.
文摘Triple-threshold CMOS technique provides the transistors that have low-, normal-, and high-threshold voltage. This paper describes a low-power carry look-ahead adder with triple-threshold CMOS technique. While the low-threshold voltage transistors are used to reduce the propagation delay time in the critical path, the high-threshold voltage transistors are used to reduce the power consumption in the shortest path. Comparing with the conventional CMOS circuit, the circuit is achieved to reduce the power consumption by 14.71% and the power-delay-product by 16.11%. This circuit is designed with Samsung 0.35 um CMOS process. The validity and effectiveness are verified through the HSPICE simulation.
