Josephson junction plays a key role not only in studying the basic physics of unconventional iron-based superconductors but also in realizing practical application of thin-film based devices,therefore the preparation ...Josephson junction plays a key role not only in studying the basic physics of unconventional iron-based superconductors but also in realizing practical application of thin-film based devices,therefore the preparation of high-quality iron pnictide Josephson junctions is of great importance.In this work,we have successfully fabricated Josephson junctions from Co-doped BaFe_(2)As_(2)thin films using a direct junction fabrication technique which utilizes high energy focused helium ion beam(FHIB).The electrical transport properties were investigated for junctions fabricated with various He^(+)irradiation doses.The junctions show sharp superconducting transition around 24 K with a narrow transition width of 2.5 K,and a dose correlated foot-structure resistance which corresponds to the effective tuning of junction properties by He^(+)irradiation.Significant J_c suppression by more than two orders of magnitude can be achieved by increasing the He^(+)irradiation dose,which is advantageous for the realization of low noise ion pnictide thin film devices.Clear Shapiro steps are observed under 10 GHz microwave irradiation.The above results demonstrate the successful fabrication of high quality and controllable Co-doped BaFe_(2)As_(2)Josephson junction with high reproducibility using the FHIB technique,laying the foundation for future investigating the mechanism of iron-based superconductors,and also the further implementation in various superconducting electronic devices.展开更多
Half-integer microwave induced steps(Shapiro steps)have been observed in many different Josephson junction systems,which have attracted a lot of attention because they signify the deviation of current phase relation(C...Half-integer microwave induced steps(Shapiro steps)have been observed in many different Josephson junction systems,which have attracted a lot of attention because they signify the deviation of current phase relation(CPR)and uncover many unconventional physical properties.In this article,we first report the discovery of half-integer Shapiro steps in MgB_(2)focused He ion beam(He-FIB)Josephson junctions.The half-integer steps'dependence on microwave frequency,temperature,microwave power,and magnetic field is also analyzed.We find that the existence of half-integer steps can be controlled by the magnetic field periodically,which is similar to that of high temperature superconductor(HTS)grain boundary junctions,and the similarity of the microstructures between gain boundary junctions and He-FIB junctions is discussed.As a consequence,we mainly attribute the physical origin of half-integer steps in MgB_(2)He-FIB junctions to the model that a He-FIB junction is analogous to a parallel junctions'array.Our results show that He-FIB technology is a promising platform for researching CPR in junctions made of different superconductors.展开更多
Raman spectroscopy is a type of inelastic scattering spectroscopy that is widely used in determining and analyzing molecular structure.It also has a number of practical applications in evaluating food safety,medicine,...Raman spectroscopy is a type of inelastic scattering spectroscopy that is widely used in determining and analyzing molecular structure.It also has a number of practical applications in evaluating food safety,medicine,and forensics.The Raman spectral signal is weak,but the development of the surface-enhanced Raman scattering(SERS)technique has overcome this problem and led to further developments in Raman spectroscopy.This paper describes a fundamental study of the use of focused ion beam(FIB)direct writing for preparing gold substrates for SERS.Molecular dynamics and Monte Carlo simulation methods are used to investigate the damage induced by gallium ion implantation of a gold substrate.Based on characterization by x-ray photoelectron spectroscopy(XPS)and scanning electron microscopy,the mechanism by which ion implantation and annealing influence the damage induced by a gallium FIB is analyzed.After annealing at 350 XC,a mixture of metallic gallium,its oxide Ga2O3 conforming to the stoichiometric ratio,and its sub-stable oxide(Ga2Ox)in sub-stoichiometric ratio precipitated on the surface are detected by XPS.Annealing treatment can effectively reduce the effect of gallium ion implantation on a SERS substrate fabricated by FIB direct writing.展开更多
As a newly developed method for fabricating Josephson junctions,a focused helium ion beam has the advantage of producing reliable and reproducible junctions.We fabricated Josephson junctions with a focused helium ion ...As a newly developed method for fabricating Josephson junctions,a focused helium ion beam has the advantage of producing reliable and reproducible junctions.We fabricated Josephson junctions with a focused helium ion beam on our 50 nm YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films.We focused on the junction with irradiation doses ranging from 100 to 300 ions/nm and demonstrated that the junction barrier can be modulated by the ion dose and that within this dose range,the junctions behave like superconductor–normal conductor–superconductor junctions.The measurements of the I–V characteristics,Fraunhofer diffraction pattern,and Shapiro steps of the junctions clearly show AC and DC Josephson effects.Our findings demonstrate high reproducibility of junction fabrication using a focused helium ion beam and suggest that commercial devices based on this nanotechnology could operate at liquid nitrogen temperatures.展开更多
Ordered nanoripples on the niobium-doped SrTiO_3 surfaces were fabricated through focused ion beam bombardment. The surface morphology of the SrTiO_3 nanoripples was characterized using in situ focused ion beam/scanni...Ordered nanoripples on the niobium-doped SrTiO_3 surfaces were fabricated through focused ion beam bombardment. The surface morphology of the SrTiO_3 nanoripples was characterized using in situ focused ion beam/scanning electron microscopy. The well-aligned SrTiO_3 nanostructures were obtained under optimized ion irradiation conditions. The characteristic wavelength was measured as about 210 nm for different ion beam currents. The relationship between the ion irradiation time and current and SrTiO_3 surface morphology was analyzed. The presented method will be an effective supplement for fabrication of SrTiO_3 nanostructures that can be used for ferroelectric and electronic applications.展开更多
Three-dimensional(3D)vertical architecture transistors represent an important technological pursuit,which have distinct advantages in device integration density,operation speed,and power consumption.However,the fabric...Three-dimensional(3D)vertical architecture transistors represent an important technological pursuit,which have distinct advantages in device integration density,operation speed,and power consumption.However,the fabrication processes of such 3D devices are complex,especially in the interconnection of electrodes.In this paper,we present a novel method which combines suspended electrodes and focused ion beam(FIB)technology to greatly simplify the electrodes interconnection in 3D devices.Based on this method,we fabricate 3D vertical core-double shell structure transistors with ZnO channel and Al_(2)O_(3) gate-oxide both grown by atomic layer deposition.Suspended top electrodes of vertical architecture could be directly connected to planar electrodes by FIB deposited Pt nanowires,which avoid cumbersome steps in the traditional 3D structure fabrication technology.Both single pillar and arrays devices show well behaved transfer characteristics with an Ion/Ioff current ratio greater than 106 and a low threshold voltage around 0 V.The ON-current of the 2×2 pillars vertical channel transistor was 1.2μA at the gate voltage of 3 V and drain voltage of 2 V,which can be also improved by increasing the number of pillars.Our method for fabricating vertical architecture transistors can be promising for device applications with high integration density and low power consumption.展开更多
The damage properties of Focused Ion Beam(FIB) milling Si3N4 thin film are investigated by the detailed analyzing images of nanoholes and simulation of Monte Carlo. The damage depth in the Si3N4 thin film for two diff...The damage properties of Focused Ion Beam(FIB) milling Si3N4 thin film are investigated by the detailed analyzing images of nanoholes and simulation of Monte Carlo. The damage depth in the Si3N4 thin film for two different ion species(Gallium and Arsenic) under various parameters(ion energy, angle of incidence) are investigated by Monte Carlo method. The simulations show the damage depth increases with the increasing ion energy, the damage depth is dependent on the angle of incident ion, the curves of the damage depth for Ga ion and As ion at 30 keV nearly superpose, while the damage depth for Ga with 90 keV ion is more than that for As ion with the same energy.展开更多
The K-V beam through an axisymmetric uniform-focusing channel is studied using the particle-core model. The beam halo-chaos is found, and a sample function controller is proposed based on mechanism of halo formation a...The K-V beam through an axisymmetric uniform-focusing channel is studied using the particle-core model. The beam halo-chaos is found, and a sample function controller is proposed based on mechanism of halo formation and strategy of controlling halo-chaos. We perform multiparticle simulation to control the halo by using the sample function controller. The numerical results show that our control method is effective. We also find that the radial ion density changes when the ion beam is in the channel： not only can the halo-chaos and its regeneration be eliminated by using the sample function control method, but also the density uniformity can be found at the beam＇s centre as long as an appropriate control method is chosen.展开更多
聚焦离子束(focused Ion beam,FIB)作为一种用于金刚石微铣刀的特种加工方式,其引发的损伤程度直接关联到刀具的加工性能和寿命。课题组采用LAMMPS软件进行分子动力学(Molecular Dynamics,MD)模拟,结合SRIM软件的分析结果,探究单晶金刚...聚焦离子束(focused Ion beam,FIB)作为一种用于金刚石微铣刀的特种加工方式,其引发的损伤程度直接关联到刀具的加工性能和寿命。课题组采用LAMMPS软件进行分子动力学(Molecular Dynamics,MD)模拟,结合SRIM软件的分析结果,探究单晶金刚石亚表层损伤的形成机理和入射离子能量对损伤深度和范围的影响。模拟结果表明:随着入射离子能量的提升,离子束在材料内的渗透深度及引起的非晶层和点缺陷损伤均有所增加;进一步的研究发现损伤形成过程中材料局部温度的上升可能诱发自退火现象,且与离子入射能量成正比,该现象对于理解聚焦离子束加工引起的损伤有着至关重要的意义;而势能的变化与损伤形成之间的显著对应关系揭示了第一邻近原子的势能明显高于第二邻近原子,进而高于Other类型原子,这一发现有助于深入理解损伤形成的微观过程。因此,精确控制入射能量是实现金刚石材料高精度聚焦离子束加工的关键,且对自退火效应和势能变化的研究对损伤监控与控制同样重要。展开更多
A windowed very small aperture laser (VSAL) source for use in high resolution near field optical data storage is fabricated.The windowed regions are introduced to avoid shorting the pn junction with metal coating a...A windowed very small aperture laser (VSAL) source for use in high resolution near field optical data storage is fabricated.The windowed regions are introduced to avoid shorting the pn junction with metal coating and suppress the COD effect.It facilitates producing VSAL by simplified technology and improves the laser performance.A VSAL with 400nm small aperture is demonstrated by focused ion beam (FIB) and the output power is 0 3mW at 31mA.展开更多
基金Project supported by the National Key Research and Development Program of China (Grant Nos.2020YFF01014706 and 2017YFC0601901)the National Natural Science Foundation of China (Grant Nos.61571019 and 52177026)。
文摘Josephson junction plays a key role not only in studying the basic physics of unconventional iron-based superconductors but also in realizing practical application of thin-film based devices,therefore the preparation of high-quality iron pnictide Josephson junctions is of great importance.In this work,we have successfully fabricated Josephson junctions from Co-doped BaFe_(2)As_(2)thin films using a direct junction fabrication technique which utilizes high energy focused helium ion beam(FHIB).The electrical transport properties were investigated for junctions fabricated with various He^(+)irradiation doses.The junctions show sharp superconducting transition around 24 K with a narrow transition width of 2.5 K,and a dose correlated foot-structure resistance which corresponds to the effective tuning of junction properties by He^(+)irradiation.Significant J_c suppression by more than two orders of magnitude can be achieved by increasing the He^(+)irradiation dose,which is advantageous for the realization of low noise ion pnictide thin film devices.Clear Shapiro steps are observed under 10 GHz microwave irradiation.The above results demonstrate the successful fabrication of high quality and controllable Co-doped BaFe_(2)As_(2)Josephson junction with high reproducibility using the FHIB technique,laying the foundation for future investigating the mechanism of iron-based superconductors,and also the further implementation in various superconducting electronic devices.
基金supported by the National Natural Science Foundation of China (Grant No.12104016)the National Key Research and Development Program of China (Grant No.2020YFF01014706)。
文摘Half-integer microwave induced steps(Shapiro steps)have been observed in many different Josephson junction systems,which have attracted a lot of attention because they signify the deviation of current phase relation(CPR)and uncover many unconventional physical properties.In this article,we first report the discovery of half-integer Shapiro steps in MgB_(2)focused He ion beam(He-FIB)Josephson junctions.The half-integer steps'dependence on microwave frequency,temperature,microwave power,and magnetic field is also analyzed.We find that the existence of half-integer steps can be controlled by the magnetic field periodically,which is similar to that of high temperature superconductor(HTS)grain boundary junctions,and the similarity of the microstructures between gain boundary junctions and He-FIB junctions is discussed.As a consequence,we mainly attribute the physical origin of half-integer steps in MgB_(2)He-FIB junctions to the model that a He-FIB junction is analogous to a parallel junctions'array.Our results show that He-FIB technology is a promising platform for researching CPR in junctions made of different superconductors.
基金The study is supported by the National Natural Science Foundation of China(Grant No.51575389)the State Key Laboratory of Precision Measurement Technology and Instruments(Pilt1705)。
文摘Raman spectroscopy is a type of inelastic scattering spectroscopy that is widely used in determining and analyzing molecular structure.It also has a number of practical applications in evaluating food safety,medicine,and forensics.The Raman spectral signal is weak,but the development of the surface-enhanced Raman scattering(SERS)technique has overcome this problem and led to further developments in Raman spectroscopy.This paper describes a fundamental study of the use of focused ion beam(FIB)direct writing for preparing gold substrates for SERS.Molecular dynamics and Monte Carlo simulation methods are used to investigate the damage induced by gallium ion implantation of a gold substrate.Based on characterization by x-ray photoelectron spectroscopy(XPS)and scanning electron microscopy,the mechanism by which ion implantation and annealing influence the damage induced by a gallium FIB is analyzed.After annealing at 350 XC,a mixture of metallic gallium,its oxide Ga2O3 conforming to the stoichiometric ratio,and its sub-stable oxide(Ga2Ox)in sub-stoichiometric ratio precipitated on the surface are detected by XPS.Annealing treatment can effectively reduce the effect of gallium ion implantation on a SERS substrate fabricated by FIB direct writing.
基金supported by the National Key Research and Development Program of China(Grant No.2017YFC0601901)the National Natural Science Foundation of China(Grant No.61571019)。
文摘As a newly developed method for fabricating Josephson junctions,a focused helium ion beam has the advantage of producing reliable and reproducible junctions.We fabricated Josephson junctions with a focused helium ion beam on our 50 nm YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films.We focused on the junction with irradiation doses ranging from 100 to 300 ions/nm and demonstrated that the junction barrier can be modulated by the ion dose and that within this dose range,the junctions behave like superconductor–normal conductor–superconductor junctions.The measurements of the I–V characteristics,Fraunhofer diffraction pattern,and Shapiro steps of the junctions clearly show AC and DC Josephson effects.Our findings demonstrate high reproducibility of junction fabrication using a focused helium ion beam and suggest that commercial devices based on this nanotechnology could operate at liquid nitrogen temperatures.
基金the financial support from the Arkansas Institute for Nanoscience and Engineering at University of Arkansasthe International Centre of Artificial Materials(iCAM)at University of Electronic Science and Technology of China
文摘Ordered nanoripples on the niobium-doped SrTiO_3 surfaces were fabricated through focused ion beam bombardment. The surface morphology of the SrTiO_3 nanoripples was characterized using in situ focused ion beam/scanning electron microscopy. The well-aligned SrTiO_3 nanostructures were obtained under optimized ion irradiation conditions. The characteristic wavelength was measured as about 210 nm for different ion beam currents. The relationship between the ion irradiation time and current and SrTiO_3 surface morphology was analyzed. The presented method will be an effective supplement for fabrication of SrTiO_3 nanostructures that can be used for ferroelectric and electronic applications.
基金the National Key Research and Development Program of China(Grant Nos.2016YFA0200400 and 2016YFA0200800)the National Natural Science Foundation of China(Grant Nos.61888102,12074420,and 11674387)+1 种基金Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB33000000)Key Research Program of Frontier Sciences,Chinese Acdemy of Sciences(Grant No.QYZDJ-SSWSLH042).
文摘Three-dimensional(3D)vertical architecture transistors represent an important technological pursuit,which have distinct advantages in device integration density,operation speed,and power consumption.However,the fabrication processes of such 3D devices are complex,especially in the interconnection of electrodes.In this paper,we present a novel method which combines suspended electrodes and focused ion beam(FIB)technology to greatly simplify the electrodes interconnection in 3D devices.Based on this method,we fabricate 3D vertical core-double shell structure transistors with ZnO channel and Al_(2)O_(3) gate-oxide both grown by atomic layer deposition.Suspended top electrodes of vertical architecture could be directly connected to planar electrodes by FIB deposited Pt nanowires,which avoid cumbersome steps in the traditional 3D structure fabrication technology.Both single pillar and arrays devices show well behaved transfer characteristics with an Ion/Ioff current ratio greater than 106 and a low threshold voltage around 0 V.The ON-current of the 2×2 pillars vertical channel transistor was 1.2μA at the gate voltage of 3 V and drain voltage of 2 V,which can be also improved by increasing the number of pillars.Our method for fabricating vertical architecture transistors can be promising for device applications with high integration density and low power consumption.
基金Science Foundation of Yunnan Province , China(2004A00229 M)
文摘The damage properties of Focused Ion Beam(FIB) milling Si3N4 thin film are investigated by the detailed analyzing images of nanoholes and simulation of Monte Carlo. The damage depth in the Si3N4 thin film for two different ion species(Gallium and Arsenic) under various parameters(ion energy, angle of incidence) are investigated by Monte Carlo method. The simulations show the damage depth increases with the increasing ion energy, the damage depth is dependent on the angle of incident ion, the curves of the damage depth for Ga ion and As ion at 30 keV nearly superpose, while the damage depth for Ga with 90 keV ion is more than that for As ion with the same energy.
基金Project supported by the National Natural Science Foundation of China （Grant Nos 10247005 and 70071047） and the Scientific Research Foundation of China University of Mining and Technology for the Young （Grant No 2005A037）.
文摘The K-V beam through an axisymmetric uniform-focusing channel is studied using the particle-core model. The beam halo-chaos is found, and a sample function controller is proposed based on mechanism of halo formation and strategy of controlling halo-chaos. We perform multiparticle simulation to control the halo by using the sample function controller. The numerical results show that our control method is effective. We also find that the radial ion density changes when the ion beam is in the channel： not only can the halo-chaos and its regeneration be eliminated by using the sample function control method, but also the density uniformity can be found at the beam＇s centre as long as an appropriate control method is chosen.
文摘聚焦离子束(focused Ion beam,FIB)作为一种用于金刚石微铣刀的特种加工方式,其引发的损伤程度直接关联到刀具的加工性能和寿命。课题组采用LAMMPS软件进行分子动力学(Molecular Dynamics,MD)模拟,结合SRIM软件的分析结果,探究单晶金刚石亚表层损伤的形成机理和入射离子能量对损伤深度和范围的影响。模拟结果表明:随着入射离子能量的提升,离子束在材料内的渗透深度及引起的非晶层和点缺陷损伤均有所增加;进一步的研究发现损伤形成过程中材料局部温度的上升可能诱发自退火现象,且与离子入射能量成正比,该现象对于理解聚焦离子束加工引起的损伤有着至关重要的意义;而势能的变化与损伤形成之间的显著对应关系揭示了第一邻近原子的势能明显高于第二邻近原子,进而高于Other类型原子,这一发现有助于深入理解损伤形成的微观过程。因此,精确控制入射能量是实现金刚石材料高精度聚焦离子束加工的关键,且对自退火效应和势能变化的研究对损伤监控与控制同样重要。
文摘A windowed very small aperture laser (VSAL) source for use in high resolution near field optical data storage is fabricated.The windowed regions are introduced to avoid shorting the pn junction with metal coating and suppress the COD effect.It facilitates producing VSAL by simplified technology and improves the laser performance.A VSAL with 400nm small aperture is demonstrated by focused ion beam (FIB) and the output power is 0 3mW at 31mA.
