The mixed non-saturating I-V characteristics of static induction transistor (SIT) are investigated.The optimum matching relations among the structural,material,and technological parameters are also presented.The techn...The mixed non-saturating I-V characteristics of static induction transistor (SIT) are investigated.The optimum matching relations among the structural,material,and technological parameters are also presented.The technological experiments demonstrate that the channel parameters play a critical role in determining whether it is a mixed,triode-like or pentode-like I-V characteristics.The general control principles,methods,and criterions of fabrication parameters as well as the effect of control factor are analytically discussed.The results are useful for design and fabrication of SIT,especially for SIT with mixed I-V characteristics.展开更多
A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential.The results show that:the potential barrier is directly determined...A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential.The results show that:the potential barrier is directly determined by channel over pinched-off factor;gate efficiency η decreases as the gate dimension α 2 and shifted gate voltage are minished,and what differs from the first-order theory is that η will tend to zero at the shifted gate voltage tends to zero when V D=0;at low current,the voltage amplification factor μ increases as the drain current rising.When the drain current reaches certain degree,the voltage amplification factor keeps almost constant.In the end,an analytical description of SIT’s characteristic suited to both triode-like and mixed I-V characteristics are obtained.The predicted I-V curves are consistent perfectly with the reported experimental ones.展开更多
The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I V equations are deduced and well agree with experimental results.Two kinds of ...The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I V equations are deduced and well agree with experimental results.Two kinds of barriers are presented in SIT,corresponding to channel voltage barrier control (CVBC) mechanism and space charge limited control (SCLC) mechanism respectively.With the increase of drain voltage,the gradual transferring of operational mechanism from CVBC to SCLC is demonstrated.It points out that CVBC mechanism and its contest relationship with space charge barrier makes the SIT distinctly differentiated from JFET and triode devices,etc.The contest relationship of the two potential barriers also results in three different working regions,which are distinctly marked and analyzed.Furthermore,the extreme importance of grid voltage on SCE is illustrated.展开更多
介绍了由有机半导体材料酞菁铜制作的具有 Au/CuPc/Al/CuPc/Au 三明治结构的肖特基型栅极有机静电感应三极管。根据对该三极管测试,采用适当的数学工具,对其参数进行计算。通过 I - V 方程的拟合,对其动作特性进行了研究。通过对小信号...介绍了由有机半导体材料酞菁铜制作的具有 Au/CuPc/Al/CuPc/Au 三明治结构的肖特基型栅极有机静电感应三极管。根据对该三极管测试,采用适当的数学工具,对其参数进行计算。通过 I - V 方程的拟合,对其动作特性进行了研究。通过对小信号等效电路模型的仿真计算,得出其截止频率,并提出了改善其动作特性的途径。展开更多
文摘The mixed non-saturating I-V characteristics of static induction transistor (SIT) are investigated.The optimum matching relations among the structural,material,and technological parameters are also presented.The technological experiments demonstrate that the channel parameters play a critical role in determining whether it is a mixed,triode-like or pentode-like I-V characteristics.The general control principles,methods,and criterions of fabrication parameters as well as the effect of control factor are analytically discussed.The results are useful for design and fabrication of SIT,especially for SIT with mixed I-V characteristics.
文摘A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential.The results show that:the potential barrier is directly determined by channel over pinched-off factor;gate efficiency η decreases as the gate dimension α 2 and shifted gate voltage are minished,and what differs from the first-order theory is that η will tend to zero at the shifted gate voltage tends to zero when V D=0;at low current,the voltage amplification factor μ increases as the drain current rising.When the drain current reaches certain degree,the voltage amplification factor keeps almost constant.In the end,an analytical description of SIT’s characteristic suited to both triode-like and mixed I-V characteristics are obtained.The predicted I-V curves are consistent perfectly with the reported experimental ones.
文摘The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I V equations are deduced and well agree with experimental results.Two kinds of barriers are presented in SIT,corresponding to channel voltage barrier control (CVBC) mechanism and space charge limited control (SCLC) mechanism respectively.With the increase of drain voltage,the gradual transferring of operational mechanism from CVBC to SCLC is demonstrated.It points out that CVBC mechanism and its contest relationship with space charge barrier makes the SIT distinctly differentiated from JFET and triode devices,etc.The contest relationship of the two potential barriers also results in three different working regions,which are distinctly marked and analyzed.Furthermore,the extreme importance of grid voltage on SCE is illustrated.
文摘介绍了由有机半导体材料酞菁铜制作的具有 Au/CuPc/Al/CuPc/Au 三明治结构的肖特基型栅极有机静电感应三极管。根据对该三极管测试,采用适当的数学工具,对其参数进行计算。通过 I - V 方程的拟合,对其动作特性进行了研究。通过对小信号等效电路模型的仿真计算,得出其截止频率,并提出了改善其动作特性的途径。
