In recent years,the utilization of 3D printing technology in micro and nano device manufacturing has garneredsignificant attention.Advancements in 3D printing have enabled achieving sub-micron level precision.Unlikeco...In recent years,the utilization of 3D printing technology in micro and nano device manufacturing has garneredsignificant attention.Advancements in 3D printing have enabled achieving sub-micron level precision.Unlikeconventional micro-machining techniques,3D printing offers versatility in material selection,such as polymers.3Dprinting technology has been gradually applied to the general field of microelectronic devices such as sensors,actuators and flexible electronics due to its adaptability and efficacy in microgeometric design and manufacturingprocesses.Furthermore,3D printing technology has also been instrumental in the fabrication of microfluidic devices,both through direct and indirect processes.This paper provides an overview of the evolving landscape of 3D printingtechnology,delineating the essential materials and processes involved in fabricating microelectronic and microfluidicdevices in recent times.Additionally,it synthesizes the diverse applications of these technologies across differentdomains.展开更多
Microelectronic magnetic sensors are essential in diverse applications,including automotive,industrial,and consumer electronics.Hall-effect devices hold the largest share of the magnetic sensor market,and they are par...Microelectronic magnetic sensors are essential in diverse applications,including automotive,industrial,and consumer electronics.Hall-effect devices hold the largest share of the magnetic sensor market,and they are particularly valued for their reliability,low cost and CMOS compatibility.This paper introduces a novel 3-axis Hall-effect sensor element based on an inverted pyramid structure,realized by leveraging MEMS micromachining and CMOS processing.The devices are manufactured by etching the pyramid openings with TMAH and implanting the sloped walls with n-dopants to define the active area.Through the use of various bias-sense detection modes,the device is able to detect both in-plane and out-of-plane magnetic fields within a single compact structure.In addition,the offset can be significantly reduced by one to three orders of magnitude by employing the current-spinning method.The device presented in this work demonstrated high in-plane and out-of-plane current-and voltage-related sensitivities ranging between 64.1 to 198 V A−1 T−1 and 14.8 to 21.4 mV V^(−1) T−1,with crosstalk below 4.7%.The sensor exhibits a thermal noise floor which corresponds to approximately 0:5μT/√Hz p at 1.31 V supply.This novel Hall-effect sensor represents a promising and simpler alternative to existing state-of-the-art 3-axis magnetic sensors,offering a viable solution for precise and reliable magnetic field sensing in various applications such as position feedback and power monitoring.展开更多
A microelectronic circuit is used to regenerate the neural signals between the proximal end and the distal end of an injured nerve.An experimental scheme is designed and carried out to verify the feasibility of the so...A microelectronic circuit is used to regenerate the neural signals between the proximal end and the distal end of an injured nerve.An experimental scheme is designed and carried out to verify the feasibility of the so-called microelectronic neural bridge（MNB）.The sciatic signals of the source spinal toad which are evoked by chemical stimuli are used as source signals to stimulate the sciatic of the controlled spinal toad.The sciatic nerve signals of the source spinal toad,the regenerated sciatic signals in the controlled spinal toad,and the resulting electromyography（EMG）signals associated with the gastrocnemius muscle movements of the controlled spinal toad are displayed and recorded by an oscilloscope.By analyzing the coherence between the source sciatic nerve signals and the regenerated sciatic nerve signals and the coherence between the regenerated nerve signals and the EMG signals,it is proved that the regenerated sciatic nerve signals have a relationship with the source sciatic nerve signals and control shrinkage of the leg of the controlled toad.展开更多
The effect of Kovar alloy oxidized in simulated field atmosphere on its sealing with glass was studied in this article. After Kovar plates and pins were preoxidized in N2 with 0℃, 10℃ and 20℃ dew points at 1000℃ f...The effect of Kovar alloy oxidized in simulated field atmosphere on its sealing with glass was studied in this article. After Kovar plates and pins were preoxidized in N2 with 0℃, 10℃ and 20℃ dew points at 1000℃ for different times, Fe304 and Fe203 existed in the oxidation products on Kovar surface, and the quantity of Fe203 increased with increasing dew point and oxidation time. Then they were sealed with borosilicate glass insulator at 1030℃ for 20 rain. The results indicated that the type and quantity of oxidation products would directly influence the quality of glass-to-metal seals. With the increase of oxidation products, gas bubbles in the glass insulator were more serious, the climbing height of glass along the pins was higher, and corrosion of Kovar pins caused from the molten glass was transformed from uniform to the localized.展开更多
In this paper, a-Si：H/a-SiGe：H/μc-SiGe：H triple-junction solar cell structure is proposed. By the analyses of mi- croelectronic and photonic structures （AMPS-1D） and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination...In this paper, a-Si：H/a-SiGe：H/μc-SiGe：H triple-junction solar cell structure is proposed. By the analyses of mi- croelectronic and photonic structures （AMPS-1D） and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination junction （TRJ） model, the most preferably combined bandgap for this structure is found to be 1.85 eV/1.50 eV/1.0 eV. Using more realistic material properties, optimized thickness combination is investigated. Along this direction, a-Si：H/a-SiGe：H/μc-SiGe：H triple cell with an initial efficiency of 12.09% （Voc = 2.03 V, FF = 0.69, Jsc = 8.63 mA/cm^2, area = 1 cm^2） is achieved in our laboratory.展开更多
The present study used a microelectronic neural bridge comprised of electrode arrays for neural signal detection, functional electrical stimulation, and a microelectronic circuit including signal amplifying, processin...The present study used a microelectronic neural bridge comprised of electrode arrays for neural signal detection, functional electrical stimulation, and a microelectronic circuit including signal amplifying, processing, and functional electrical stimulation to bridge two separate nerves, and to restore the lost function of one nerve. The left leg of one spinal toad was subjected to external mechanical stimulation and functional electrical stimulation driving. The function of the left leg of one spinal toad was regenerated to the corresponding leg of another spinal toad using a microelectronic neural bridge. Oscilloscope tracings showed that the electromyographic signals from controlled spinal toads were generated by neural signals that controlled the spinal toad, and there was a delay between signals. This study demonstrates that microelectronic neural bridging can be used to restore neural function between different injured nerves.展开更多
The mixed teaching mode plays an increasingly important role in stimulating students’interest and autonomy in learning,and strengthening students’learning ability.The full integration of mixed teaching mode and micr...The mixed teaching mode plays an increasingly important role in stimulating students’interest and autonomy in learning,and strengthening students’learning ability.The full integration of mixed teaching mode and microelectronics teaching can not only achieve the teaching objectives smoothly,but also enable students to deepen their understanding and memory of relevant knowledge with the help of diversified and interesting teaching methods.Therefore,this paper takes the microelectronics course as an example to practice and explore the effective ways to carry out the mixed teaching mode.Teachers should not make full use of online and offline teaching resources,but also actively improve the traditional assessment systems.Through the continuous improvement of the practicality of online and offline teaching content,an easy-to-complex teaching method with a coherent content structure can be adopted to stimulate students’learning motivation,improve their enthusiasm for participation,and lay a solid foundation for further improvements in the teaching of microelectronics technology.展开更多
The technology boom in microelectronics and telecommunication industry has presented a unique opportunity for nanomaterials. Nanomaterials enable the creation of unique devices, components and systems through the cont...The technology boom in microelectronics and telecommunication industry has presented a unique opportunity for nanomaterials. Nanomaterials enable the creation of unique devices, components and systems through the control of matter on a near molecular level. These new devices, components and systems will exhibit novel physical, chemical, mechanical, electrical, optical and biological properties. The synthesis processes of nanomaterials are reviewed and the applications of nanomatorials in microelectronics are discussed in this paper.展开更多
The Townsend discharge mechanism has been explored in a planar microelectronic gas discharge device （MGDD） with different applied voltages U and interelectrode distance d under various pressures in air. The anode an...The Townsend discharge mechanism has been explored in a planar microelectronic gas discharge device （MGDD） with different applied voltages U and interelectrode distance d under various pressures in air. The anode and the cathode of the MGDD are formed by a transparent SnO2 covered glass and a GaAs semiconductor, respectively. In the experiments, the discharge is found to be unstable just below the breakdown voltage Ub, whereas the discharge passes through a homo- geneous stable Townsend mode beyond the breakdown voltage. The measurements are made by an electrical circuit and a CCD camera by recording the currents and light emission （LE） intensities. The intensity profiles, which are converted from the 3D light emission images along the semiconductor diameter, have been analysed for different system parameters. Dif- ferent instantaneous conductivity ~t regimes are found below and beyond the Townsend region. These regimes govern the current and spatio-temporal LE stabilities in the plasma system. It has been proven that the stable LE region increases up to 550 Torr as a function of pressure for small d. If the active area of the semiconductor becomes larger and the interlectrode distance d becomes smaller, the stable LE region stays nearly constant with pressure.展开更多
Silicon containing materials have traditionally been used in microelectronic fabrication. Semiconductor devices often have one or more arrays of patterned interconnect levels that serve to electrically couple the indi...Silicon containing materials have traditionally been used in microelectronic fabrication. Semiconductor devices often have one or more arrays of patterned interconnect levels that serve to electrically couple the individual circuit elements forming an integrated circuit. These interconnect levels are typically separated by an insulating or dielectric film. Previously, a silicon oxide film was the most commonly used material for such dielectric films having dielectric constants( k ) near 4 0. However, as the feature size is continuously scaling down, the relatively high k of such silicon oxide films became inadequate to provide efficient electrical insulation. As such, there has been an increasing market demand for materials with even lower dielectric constant for Interlayer Dielectric(ILD) applications, yet retaining thermal and mechanical integrity. We wish to report here our investigations on the preparation of ultra low k ILD materials using a sacrificial approach whereby organic groups are burnt out to generate low k porous ORMOSIL films. We have been able to prepare a variety of organically modified silicone resins leading to highly microporous thin films, exhibiting ultra low k from 1 80 to 2 87, and good to high modulus, 1 5 to 5 5 GPa. Structure property influences on porosity, dielectric constant and modulus will be discussed.展开更多
A hybrid control platform is investigated in this paper to mitigate microvibrations to a group of vibration-sensitive equipment installed in a microelectronics facility subject to nearby road vehicle-induced horizonta...A hybrid control platform is investigated in this paper to mitigate microvibrations to a group of vibration-sensitive equipment installed in a microelectronics facility subject to nearby road vehicle-induced horizontal and vertical ground motions. The hybrid control platform, on which microelectronics equipment is installed, is mounted on a building floor through a series of passive mounts and controlled by hydraulic actuators in both horizontal and vertical directions. The control platform is an elastic body with significant bending modes of vibration, and a sub-optimal control algorithm is used to manipulate the hydraulic actuators with actuator dynamics included. The finite element model and the equations of motion of the coupled platform-building system are then established in the absolute coordinate to facilitate the feedback control and performance evaluation of the platform. The horizontal and vertical ground vibrations at the base of the building induced by nearby moving road vehicles are assumed to be stationary random processes. A typical three-story microelectronics building is selected as a case study. The case study shows that the vertical vibration of the microelectronics building is higher than the horizontal. The use of a hybrid control platform can effectively reduce both horizontal and vertical microvibrations of the microelectronics equipment to the level which satisfies the stringent microscale velocity requirement specified in the Bolt Beranek & Newman (BBN) criteria.展开更多
The device structure and technical processings of quasi-planar self-aligned silicon avalanche electron emission array arc introduced. The processing step at the edge of electron emission region is about 10nm only and ...The device structure and technical processings of quasi-planar self-aligned silicon avalanche electron emission array arc introduced. The processing step at the edge of electron emission region is about 10nm only and the width of self-aligned current channel of shallow As implantation is about 3μm. Its I-V characteristics show a larger linear region and lower series resistance than that of the previous silicon avalanche electron emission devices. Some of the electron emission characteristics are also discussed in this paper.展开更多
Thermionic emission is a tunneling phenomenon,which depicts that electrons on the surface of a conductor can be pulled out into the vacuum when they are subjected to high electrical tensions while being heated hot eno...Thermionic emission is a tunneling phenomenon,which depicts that electrons on the surface of a conductor can be pulled out into the vacuum when they are subjected to high electrical tensions while being heated hot enough to overtake their work functions.This principle has led to the great success of the so-called vacuum tubes in the early 20 th century.To date,major challenges still remain in the miniaturization of a vacuum channel transistor for on-chip integration in modern solid-state integrated circuits.Here,by introducing nano-sized vacuum gaps(~200 nm)in a van der Waals heterostructure,we successfully fabricated a one-dimensional(1 D)edge-to-edge thermionic emission vacuum tube using graphene as the filament.With the increasing collector voltage,the emitted current exhibits a typical rectifying behavior,with the maximum emission current reaching 200 p A and an ON-OFF ratio of 10;.In addition,it is found that the maximum emission current is proportional to the number of the layers of graphene.Our results expand the research of nano-sized vacuum tubes to an unexplored physical limit of 1 D edge-to-edge emission,and hold great promise for future nano-electronic systems based on it.展开更多
This article proposes a novel "cathode-on-membrane" vacuum microelectronic (VME)pressure sensor. Compared with conventional VME pressure sensors, the package process of the new structured sensor is easier to...This article proposes a novel "cathode-on-membrane" vacuum microelectronic (VME)pressure sensor. Compared with conventional VME pressure sensors, the package process of the new structured sensor is easier to control, and therefore it enable greater potential of nass production and high productivity. The properties of the new sensor have been theoretically investigated by computer simulations; the practical structure has been designed and fabricated; and the package technique has been studied.展开更多
Aerospace microelectronic technology has become the core competence of aerospace technology. For evaluating the aerospace microelectronic industry, it is necessary to change descriptive language of goal to quantitativ...Aerospace microelectronic technology has become the core competence of aerospace technology. For evaluating the aerospace microelectronic industry, it is necessary to change descriptive language of goal to quantitative index that can be measured. Knowing quantified goals or tree structure and array of general goal system, with certain algorithm and processing each corresponding list or array, we can bring out a quantified general goal value. The multi-objective (multi-attribute) evaluation method and the relevant weight sum algorithm have been adopted to quantitatively evaluate and forecast the developing state of the industry. A practical example illustrates that the applied decision technique and the algorithm are feasible and effective.展开更多
Whoever thinks of Empress Sisi,Sacher cake,skiing or the Vienna Opera Ball first in connection with Austria is not wrong at all,but this individual does overlook one important factor:Austria is actually an extremely i...Whoever thinks of Empress Sisi,Sacher cake,skiing or the Vienna Opera Ball first in connection with Austria is not wrong at all,but this individual does overlook one important factor:Austria is actually an extremely innovative and profitable business location.In addition to highly qualified and motivated employees,Austria always boasts the highest density of world market leaders in relation to the number of inhabitants.展开更多
Device physics research for submicron and deep submicron space microelectronics devices and integrated circuits will be described in three topics.1.Thin film submicron and deep submicron SOS / CMOS devices and integra...Device physics research for submicron and deep submicron space microelectronics devices and integrated circuits will be described in three topics.1.Thin film submicron and deep submicron SOS / CMOS devices and integrated circuits.2.Deep submicron LDD CMOS devices and integrated circuits.3.C band and Ku band microwave GaAs MESFET and III-V compound hetrojunction HEM T and HBT devices and integrated circuits.展开更多
This paper shows the current status of companies in the information and communication technology(ICT)sector in Santiago,Chile.It presents the results of interviews with 13 ICT companies,reviewing structural elements t...This paper shows the current status of companies in the information and communication technology(ICT)sector in Santiago,Chile.It presents the results of interviews with 13 ICT companies,reviewing structural elements that determine the development of the sector.For this purpose,a qualitative analysis of that interviewed group is carried out to identify their different linkages and work dynamics.This sector has a great capacity for stimulating innovative development throughout the national economy,a key element in the paradigmatic change that the so-called fourth industrial revolution imposes on us.展开更多
The new digital society is based on Internet of Things (IoT) and related connected objects are becoming more prevalent around the world. This evolution implies innovation in many areas of technology, the heart of whic...The new digital society is based on Internet of Things (IoT) and related connected objects are becoming more prevalent around the world. This evolution implies innovation in many areas of technology, the heart of which is microelectronics. Connected objects involve many technological components and functions that are directly dependent of the microelectronics capabilities. If the perspectives are exciting, several challenges are appearing. The first is related to the energy consumption of all these objects, which will become enormous by 2030, and unrealistic by 2040. The second is human resources concern. The future engineers and PhD will have many obstacles to overcome. A way to face these challenges is to involve more and more new thin film technologies that must be combined with VLSI ones, and to better train students to this domain with enough know-how and with a large spectrum of knowledge suitable for multidisciplinary applications. The French national network for Higher Education in microelectronics has adopted this strategy. After presentation of the challenges, this paper deals with the innovative activities of the French network focused on thin film technologies, in order to face the challenges in a short future.展开更多
文摘In recent years,the utilization of 3D printing technology in micro and nano device manufacturing has garneredsignificant attention.Advancements in 3D printing have enabled achieving sub-micron level precision.Unlikeconventional micro-machining techniques,3D printing offers versatility in material selection,such as polymers.3Dprinting technology has been gradually applied to the general field of microelectronic devices such as sensors,actuators and flexible electronics due to its adaptability and efficacy in microgeometric design and manufacturingprocesses.Furthermore,3D printing technology has also been instrumental in the fabrication of microfluidic devices,both through direct and indirect processes.This paper provides an overview of the evolving landscape of 3D printingtechnology,delineating the essential materials and processes involved in fabricating microelectronic and microfluidicdevices in recent times.Additionally,it synthesizes the diverse applications of these technologies across differentdomains.
文摘Microelectronic magnetic sensors are essential in diverse applications,including automotive,industrial,and consumer electronics.Hall-effect devices hold the largest share of the magnetic sensor market,and they are particularly valued for their reliability,low cost and CMOS compatibility.This paper introduces a novel 3-axis Hall-effect sensor element based on an inverted pyramid structure,realized by leveraging MEMS micromachining and CMOS processing.The devices are manufactured by etching the pyramid openings with TMAH and implanting the sloped walls with n-dopants to define the active area.Through the use of various bias-sense detection modes,the device is able to detect both in-plane and out-of-plane magnetic fields within a single compact structure.In addition,the offset can be significantly reduced by one to three orders of magnitude by employing the current-spinning method.The device presented in this work demonstrated high in-plane and out-of-plane current-and voltage-related sensitivities ranging between 64.1 to 198 V A−1 T−1 and 14.8 to 21.4 mV V^(−1) T−1,with crosstalk below 4.7%.The sensor exhibits a thermal noise floor which corresponds to approximately 0:5μT/√Hz p at 1.31 V supply.This novel Hall-effect sensor represents a promising and simpler alternative to existing state-of-the-art 3-axis magnetic sensors,offering a viable solution for precise and reliable magnetic field sensing in various applications such as position feedback and power monitoring.
基金The National Natural Science Foundation of China(No.90307013,90707005)the Natural Science Foundation of Jiangsu Province(No.BK2008032)+1 种基金Special Foundation and Open Foundation of State Key Laboratory of Bioelectronics of Southeast UniversityNantong Planning Project of Science and Technology(No.K2009037)
文摘A microelectronic circuit is used to regenerate the neural signals between the proximal end and the distal end of an injured nerve.An experimental scheme is designed and carried out to verify the feasibility of the so-called microelectronic neural bridge（MNB）.The sciatic signals of the source spinal toad which are evoked by chemical stimuli are used as source signals to stimulate the sciatic of the controlled spinal toad.The sciatic nerve signals of the source spinal toad,the regenerated sciatic signals in the controlled spinal toad,and the resulting electromyography（EMG）signals associated with the gastrocnemius muscle movements of the controlled spinal toad are displayed and recorded by an oscilloscope.By analyzing the coherence between the source sciatic nerve signals and the regenerated sciatic nerve signals and the coherence between the regenerated nerve signals and the EMG signals,it is proved that the regenerated sciatic nerve signals have a relationship with the source sciatic nerve signals and control shrinkage of the leg of the controlled toad.
文摘The effect of Kovar alloy oxidized in simulated field atmosphere on its sealing with glass was studied in this article. After Kovar plates and pins were preoxidized in N2 with 0℃, 10℃ and 20℃ dew points at 1000℃ for different times, Fe304 and Fe203 existed in the oxidation products on Kovar surface, and the quantity of Fe203 increased with increasing dew point and oxidation time. Then they were sealed with borosilicate glass insulator at 1030℃ for 20 rain. The results indicated that the type and quantity of oxidation products would directly influence the quality of glass-to-metal seals. With the increase of oxidation products, gas bubbles in the glass insulator were more serious, the climbing height of glass along the pins was higher, and corrosion of Kovar pins caused from the molten glass was transformed from uniform to the localized.
基金supported by the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707)the Natural Science Foundation of Tianjin City, China (Grant No. 12JCQNJC01000)the Fundamental Research Funds for the Central Universities of China (Grant No. 65012371)
文摘In this paper, a-Si：H/a-SiGe：H/μc-SiGe：H triple-junction solar cell structure is proposed. By the analyses of mi- croelectronic and photonic structures （AMPS-1D） and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination junction （TRJ） model, the most preferably combined bandgap for this structure is found to be 1.85 eV/1.50 eV/1.0 eV. Using more realistic material properties, optimized thickness combination is investigated. Along this direction, a-Si：H/a-SiGe：H/μc-SiGe：H triple cell with an initial efficiency of 12.09% （Voc = 2.03 V, FF = 0.69, Jsc = 8.63 mA/cm^2, area = 1 cm^2） is achieved in our laboratory.
基金supported by the National Natural Science Foundation of China,No,90707005,61001046 and 61204018the Natural Science Foundation of Education Department of Jiangsu Province,No.11KJB510023the Special Foundation and Open Foundation of State Key Laboratory of Bioelectronics of Southeast University,No.2011E05
文摘The present study used a microelectronic neural bridge comprised of electrode arrays for neural signal detection, functional electrical stimulation, and a microelectronic circuit including signal amplifying, processing, and functional electrical stimulation to bridge two separate nerves, and to restore the lost function of one nerve. The left leg of one spinal toad was subjected to external mechanical stimulation and functional electrical stimulation driving. The function of the left leg of one spinal toad was regenerated to the corresponding leg of another spinal toad using a microelectronic neural bridge. Oscilloscope tracings showed that the electromyographic signals from controlled spinal toads were generated by neural signals that controlled the spinal toad, and there was a delay between signals. This study demonstrates that microelectronic neural bridging can be used to restore neural function between different injured nerves.
文摘The mixed teaching mode plays an increasingly important role in stimulating students’interest and autonomy in learning,and strengthening students’learning ability.The full integration of mixed teaching mode and microelectronics teaching can not only achieve the teaching objectives smoothly,but also enable students to deepen their understanding and memory of relevant knowledge with the help of diversified and interesting teaching methods.Therefore,this paper takes the microelectronics course as an example to practice and explore the effective ways to carry out the mixed teaching mode.Teachers should not make full use of online and offline teaching resources,but also actively improve the traditional assessment systems.Through the continuous improvement of the practicality of online and offline teaching content,an easy-to-complex teaching method with a coherent content structure can be adopted to stimulate students’learning motivation,improve their enthusiasm for participation,and lay a solid foundation for further improvements in the teaching of microelectronics technology.
文摘The technology boom in microelectronics and telecommunication industry has presented a unique opportunity for nanomaterials. Nanomaterials enable the creation of unique devices, components and systems through the control of matter on a near molecular level. These new devices, components and systems will exhibit novel physical, chemical, mechanical, electrical, optical and biological properties. The synthesis processes of nanomaterials are reviewed and the applications of nanomatorials in microelectronics are discussed in this paper.
基金Project supported by Gazi University BAP Research Project, Turkey （Grant Nos. 05/2012-47 and 05/2012-72）.
文摘The Townsend discharge mechanism has been explored in a planar microelectronic gas discharge device （MGDD） with different applied voltages U and interelectrode distance d under various pressures in air. The anode and the cathode of the MGDD are formed by a transparent SnO2 covered glass and a GaAs semiconductor, respectively. In the experiments, the discharge is found to be unstable just below the breakdown voltage Ub, whereas the discharge passes through a homo- geneous stable Townsend mode beyond the breakdown voltage. The measurements are made by an electrical circuit and a CCD camera by recording the currents and light emission （LE） intensities. The intensity profiles, which are converted from the 3D light emission images along the semiconductor diameter, have been analysed for different system parameters. Dif- ferent instantaneous conductivity ~t regimes are found below and beyond the Townsend region. These regimes govern the current and spatio-temporal LE stabilities in the plasma system. It has been proven that the stable LE region increases up to 550 Torr as a function of pressure for small d. If the active area of the semiconductor becomes larger and the interlectrode distance d becomes smaller, the stable LE region stays nearly constant with pressure.
文摘Silicon containing materials have traditionally been used in microelectronic fabrication. Semiconductor devices often have one or more arrays of patterned interconnect levels that serve to electrically couple the individual circuit elements forming an integrated circuit. These interconnect levels are typically separated by an insulating or dielectric film. Previously, a silicon oxide film was the most commonly used material for such dielectric films having dielectric constants( k ) near 4 0. However, as the feature size is continuously scaling down, the relatively high k of such silicon oxide films became inadequate to provide efficient electrical insulation. As such, there has been an increasing market demand for materials with even lower dielectric constant for Interlayer Dielectric(ILD) applications, yet retaining thermal and mechanical integrity. We wish to report here our investigations on the preparation of ultra low k ILD materials using a sacrificial approach whereby organic groups are burnt out to generate low k porous ORMOSIL films. We have been able to prepare a variety of organically modified silicone resins leading to highly microporous thin films, exhibiting ultra low k from 1 80 to 2 87, and good to high modulus, 1 5 to 5 5 GPa. Structure property influences on porosity, dielectric constant and modulus will be discussed.
基金CERG competitive research grant (Polyu 5054/02E) from Research Grants Council of Hong Kong, Area Strategic Development Programmer in Structural Control and Intelligent Buildings from The Hong Kong Polytechnic Universityand the Opening Research Foundation of the Beijing Key Laboratories (EESR2004-2) from Beijing University of Technology.
文摘A hybrid control platform is investigated in this paper to mitigate microvibrations to a group of vibration-sensitive equipment installed in a microelectronics facility subject to nearby road vehicle-induced horizontal and vertical ground motions. The hybrid control platform, on which microelectronics equipment is installed, is mounted on a building floor through a series of passive mounts and controlled by hydraulic actuators in both horizontal and vertical directions. The control platform is an elastic body with significant bending modes of vibration, and a sub-optimal control algorithm is used to manipulate the hydraulic actuators with actuator dynamics included. The finite element model and the equations of motion of the coupled platform-building system are then established in the absolute coordinate to facilitate the feedback control and performance evaluation of the platform. The horizontal and vertical ground vibrations at the base of the building induced by nearby moving road vehicles are assumed to be stationary random processes. A typical three-story microelectronics building is selected as a case study. The case study shows that the vertical vibration of the microelectronics building is higher than the horizontal. The use of a hybrid control platform can effectively reduce both horizontal and vertical microvibrations of the microelectronics equipment to the level which satisfies the stringent microscale velocity requirement specified in the Bolt Beranek & Newman (BBN) criteria.
基金National Natural Science Foudation of ChinaNatural Science Foudation of Zhejiang Province
文摘The device structure and technical processings of quasi-planar self-aligned silicon avalanche electron emission array arc introduced. The processing step at the edge of electron emission region is about 10nm only and the width of self-aligned current channel of shallow As implantation is about 3μm. Its I-V characteristics show a larger linear region and lower series resistance than that of the previous silicon avalanche electron emission devices. Some of the electron emission characteristics are also discussed in this paper.
基金supported by the National Natural Science Foundation of China(Grant Nos.12004389,12004288,and 12104462)the China Postdoctoral Science Foundation(Grant Nos.2020M68036 and 2021T140430)+1 种基金the support from the Joint Research Fund of Liaoning-Shenyang National Laboratory for Materials Science(Grant No.2019JH3/30100031)the support from the IMR Innovation Fund(Grant No.2021-PY17)。
文摘Thermionic emission is a tunneling phenomenon,which depicts that electrons on the surface of a conductor can be pulled out into the vacuum when they are subjected to high electrical tensions while being heated hot enough to overtake their work functions.This principle has led to the great success of the so-called vacuum tubes in the early 20 th century.To date,major challenges still remain in the miniaturization of a vacuum channel transistor for on-chip integration in modern solid-state integrated circuits.Here,by introducing nano-sized vacuum gaps(~200 nm)in a van der Waals heterostructure,we successfully fabricated a one-dimensional(1 D)edge-to-edge thermionic emission vacuum tube using graphene as the filament.With the increasing collector voltage,the emitted current exhibits a typical rectifying behavior,with the maximum emission current reaching 200 p A and an ON-OFF ratio of 10;.In addition,it is found that the maximum emission current is proportional to the number of the layers of graphene.Our results expand the research of nano-sized vacuum tubes to an unexplored physical limit of 1 D edge-to-edge emission,and hold great promise for future nano-electronic systems based on it.
基金Supported by the National High Technology R&D Program (863-512, project, number 9805-10)the National Natural Science Foundation of China (grant. number 69674030).
文摘This article proposes a novel "cathode-on-membrane" vacuum microelectronic (VME)pressure sensor. Compared with conventional VME pressure sensors, the package process of the new structured sensor is easier to control, and therefore it enable greater potential of nass production and high productivity. The properties of the new sensor have been theoretically investigated by computer simulations; the practical structure has been designed and fabricated; and the package technique has been studied.
文摘Aerospace microelectronic technology has become the core competence of aerospace technology. For evaluating the aerospace microelectronic industry, it is necessary to change descriptive language of goal to quantitative index that can be measured. Knowing quantified goals or tree structure and array of general goal system, with certain algorithm and processing each corresponding list or array, we can bring out a quantified general goal value. The multi-objective (multi-attribute) evaluation method and the relevant weight sum algorithm have been adopted to quantitatively evaluate and forecast the developing state of the industry. A practical example illustrates that the applied decision technique and the algorithm are feasible and effective.
文摘Whoever thinks of Empress Sisi,Sacher cake,skiing or the Vienna Opera Ball first in connection with Austria is not wrong at all,but this individual does overlook one important factor:Austria is actually an extremely innovative and profitable business location.In addition to highly qualified and motivated employees,Austria always boasts the highest density of world market leaders in relation to the number of inhabitants.
文摘Device physics research for submicron and deep submicron space microelectronics devices and integrated circuits will be described in three topics.1.Thin film submicron and deep submicron SOS / CMOS devices and integrated circuits.2.Deep submicron LDD CMOS devices and integrated circuits.3.C band and Ku band microwave GaAs MESFET and III-V compound hetrojunction HEM T and HBT devices and integrated circuits.
文摘This paper shows the current status of companies in the information and communication technology(ICT)sector in Santiago,Chile.It presents the results of interviews with 13 ICT companies,reviewing structural elements that determine the development of the sector.For this purpose,a qualitative analysis of that interviewed group is carried out to identify their different linkages and work dynamics.This sector has a great capacity for stimulating innovative development throughout the national economy,a key element in the paradigmatic change that the so-called fourth industrial revolution imposes on us.
文摘The new digital society is based on Internet of Things (IoT) and related connected objects are becoming more prevalent around the world. This evolution implies innovation in many areas of technology, the heart of which is microelectronics. Connected objects involve many technological components and functions that are directly dependent of the microelectronics capabilities. If the perspectives are exciting, several challenges are appearing. The first is related to the energy consumption of all these objects, which will become enormous by 2030, and unrealistic by 2040. The second is human resources concern. The future engineers and PhD will have many obstacles to overcome. A way to face these challenges is to involve more and more new thin film technologies that must be combined with VLSI ones, and to better train students to this domain with enough know-how and with a large spectrum of knowledge suitable for multidisciplinary applications. The French national network for Higher Education in microelectronics has adopted this strategy. After presentation of the challenges, this paper deals with the innovative activities of the French network focused on thin film technologies, in order to face the challenges in a short future.
