We have investigated a SiO2/SiNx/SiO2composite insulation layer structured gate dielectric for an organic thin film transistor(OTFT) with the purpose of improving the performance of the SiO2gate insulator. The SiO2/Si...We have investigated a SiO2/SiNx/SiO2composite insulation layer structured gate dielectric for an organic thin film transistor(OTFT) with the purpose of improving the performance of the SiO2gate insulator. The SiO2/SiNx/SiO2composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO2insulation layer device,the SiO2/SiNx/SiO2composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decreased leakage current.Electrical parameters such as carrier mobility by field effect measurement have been calculated.The performances of different insulating layer devices have been studied,and the results demonstrate that when the insulation layer thickness increases,the off-state current decreases.展开更多
基金Project supported by the Projects of Liaoning Province,China(No.2007220040)the National Natural Science Foundation of China (No.60477014)
文摘We have investigated a SiO2/SiNx/SiO2composite insulation layer structured gate dielectric for an organic thin film transistor(OTFT) with the purpose of improving the performance of the SiO2gate insulator. The SiO2/SiNx/SiO2composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO2insulation layer device,the SiO2/SiNx/SiO2composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decreased leakage current.Electrical parameters such as carrier mobility by field effect measurement have been calculated.The performances of different insulating layer devices have been studied,and the results demonstrate that when the insulation layer thickness increases,the off-state current decreases.
