Space ordered 1.3μm self-assembled InAs QDs are grown on GaAs（100） vicinal substrates by MOCVD. Photoluminescence measurements show that the dots on vicinal substrates have a much higher PL intensity and a narrower...Space ordered 1.3μm self-assembled InAs QDs are grown on GaAs（100） vicinal substrates by MOCVD. Photoluminescence measurements show that the dots on vicinal substrates have a much higher PL intensity and a narrower FWHM than those of dots on exact substrates, which indicates better material quality. To obtain 1.3μm emissions of InAs QDs, the role of the so called InGaAs strain cap layer （SCL） and the strain buffer layer （SBL） in the strain relaxation process in quantum dots is studied. While the use of SBL results only in a small change of emission wavelength,SCL can extend the QD＇s emission over 1.3μm due to the effective strain reducing effect of SCL.展开更多
A novel 1 55μm laser diode with spot size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double core structure is employed.For...A novel 1 55μm laser diode with spot size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double core structure is employed.For the spot size converter,a buried ridge double core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0 35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14 89°×18 18°,respectively,resulting in low coupling losses with a cleaved optical fiber (3dB loss).展开更多
文摘Space ordered 1.3μm self-assembled InAs QDs are grown on GaAs（100） vicinal substrates by MOCVD. Photoluminescence measurements show that the dots on vicinal substrates have a much higher PL intensity and a narrower FWHM than those of dots on exact substrates, which indicates better material quality. To obtain 1.3μm emissions of InAs QDs, the role of the so called InGaAs strain cap layer （SCL） and the strain buffer layer （SBL） in the strain relaxation process in quantum dots is studied. While the use of SBL results only in a small change of emission wavelength,SCL can extend the QD＇s emission over 1.3μm due to the effective strain reducing effect of SCL.
文摘A novel 1 55μm laser diode with spot size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double core structure is employed.For the spot size converter,a buried ridge double core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0 35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14 89°×18 18°,respectively,resulting in low coupling losses with a cleaved optical fiber (3dB loss).
