现有几何光学方法的二向反射分布函数BRDF(bidirectional reflection distribution function)模型在计算阴影遮蔽效应时普遍应用Blinn几何衰减效应假设,其等倾角V形槽近似得出的分段折线形式的几何衰减因子导致BRDF曲线存在较大的误差....现有几何光学方法的二向反射分布函数BRDF(bidirectional reflection distribution function)模型在计算阴影遮蔽效应时普遍应用Blinn几何衰减效应假设,其等倾角V形槽近似得出的分段折线形式的几何衰减因子导致BRDF曲线存在较大的误差.基于倾斜角随机高斯分布的微面元理论提出了一种新的几何衰减模型,得出了积分形式的几何衰减因子表达式,数值模拟比较了Blinn几何衰减因子与修正后的积分型衰减因子以及对应的BRDF模型曲线.结果表明:提出的几何衰减因子在物理合理性以及模拟精度方面都有明显提升,使BRDF模型曲线与已有BRDF数据之间的标准误差由0.0636减小到0.0084.展开更多
Transparent zinc oxide thin film transistors （ZnO-TFTs） with bottom-gate and top-gate structures were constructed on 50mm silica glass substrates. The ZnO films were deposited by RF magnetron sputtering and SiO2 fil...Transparent zinc oxide thin film transistors （ZnO-TFTs） with bottom-gate and top-gate structures were constructed on 50mm silica glass substrates. The ZnO films were deposited by RF magnetron sputtering and SiO2 films served as the gate insulator layer. We found that the ZnO-TFTs with bottom-gate structure have better electrical performance than those with top-gate structure. The bottom-gate ZnO-TFTs operate as an n-channel enhancement mode, which have clear pinch off and saturation characteristics. The field effect mobility, threshold voltage, and the current on/off ratio were determined to be 18.4cm^2/（V ·s）, - 0. 5V and 10^4 , respectively. Meanwhile, the top-gate ZnO-TFTs exhibit n-chan- nel depletion mode operation and no saturation characteristics were detected. The electrical difference of the devices may be due to the different character of the interface between the channel and insulator layers. The two transistors types have high transparency in the visible light region.展开更多
文摘现有几何光学方法的二向反射分布函数BRDF(bidirectional reflection distribution function)模型在计算阴影遮蔽效应时普遍应用Blinn几何衰减效应假设,其等倾角V形槽近似得出的分段折线形式的几何衰减因子导致BRDF曲线存在较大的误差.基于倾斜角随机高斯分布的微面元理论提出了一种新的几何衰减模型,得出了积分形式的几何衰减因子表达式,数值模拟比较了Blinn几何衰减因子与修正后的积分型衰减因子以及对应的BRDF模型曲线.结果表明:提出的几何衰减因子在物理合理性以及模拟精度方面都有明显提升,使BRDF模型曲线与已有BRDF数据之间的标准误差由0.0636减小到0.0084.
文摘Transparent zinc oxide thin film transistors （ZnO-TFTs） with bottom-gate and top-gate structures were constructed on 50mm silica glass substrates. The ZnO films were deposited by RF magnetron sputtering and SiO2 films served as the gate insulator layer. We found that the ZnO-TFTs with bottom-gate structure have better electrical performance than those with top-gate structure. The bottom-gate ZnO-TFTs operate as an n-channel enhancement mode, which have clear pinch off and saturation characteristics. The field effect mobility, threshold voltage, and the current on/off ratio were determined to be 18.4cm^2/（V ·s）, - 0. 5V and 10^4 , respectively. Meanwhile, the top-gate ZnO-TFTs exhibit n-chan- nel depletion mode operation and no saturation characteristics were detected. The electrical difference of the devices may be due to the different character of the interface between the channel and insulator layers. The two transistors types have high transparency in the visible light region.
