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Magnetotransport properties of graphene layers decorated with colloid quantum dots
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作者 Ri-Jia Zhu Yu-Qing Huang +2 位作者 Jia-Yu Li Ning Kang Hong-Qi Xu 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第6期361-365,共5页
The hybrid graphene-quantum dot devices can potentially be used to tailor the electronic, optical, and chemical properties of graphene. Here, the low temperature electronic transport properties of bilayer graphene dec... The hybrid graphene-quantum dot devices can potentially be used to tailor the electronic, optical, and chemical properties of graphene. Here, the low temperature electronic transport properties of bilayer graphene decorated with PbS colloid quantum dots(CQDs) have been investigated in the weak or strong magnetic fields. The presence of the CQDs introduces additional scattering potentials that alter the magnetotransport properties of the graphene layers, leading to the observation of a new set of magnetoconductance oscillations near zero magnetic field as well as the high-field quantum Hall regime.The results bring about a new strategy for exploring the quantum interference effects in two-dimensional materials which are sensitive to the surrounding electrostatic environment, and open up a new gateway for exploring the graphene sensing with quantum interference effects. 展开更多
关键词 graphene COLLOID QUANTUM DOTS QUANTUM HALL effect Aharonov–Bohm oscillations
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Enhanced etching of silicon didioxide guided by carbon nanotubes in HF solution
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作者 赵华波 应轶群 +6 位作者 严峰 魏芹芹 傅云义 张岩 李彦 魏子钧 张朝晖 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第10期442-446,共5页
This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes (SWNTs) in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a patte... This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes (SWNTs) in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO2 channels can be prepared. The nanoscale SiO2 patterns can also be created on the surface of three- dimensional (3D) SiO2 substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO2 has been qualitatively analysed using defects in SWNTs, combined with H3O+ electric double layers around SWNTs in an HF solution. 展开更多
关键词 carbon nanotube silicon dioxide HF wet etching defects and electric double layers
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Semi-custom methodology to fabricate transmission electron microscopy chip for in situ characterization of nanodevices and nanomaterials
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作者 YU BoCheng SUN Mei +8 位作者 PAN RuHao TIAN JiaMin ZHENG FengYi HUANG Dong LYU FengJiao ZHANG ZhiTong LI JunJie CHEN Qing LI ZhiHong 《Science China(Technological Sciences)》 SCIE EI CAS CSCD 2022年第4期817-825,共9页
The fabrication of nanodevices on the delicate membrane window of the TEM(transmission electron microscopy)chip has the risk of breakage failure,limiting in-depth research in this area.This work proposed a methodology... The fabrication of nanodevices on the delicate membrane window of the TEM(transmission electron microscopy)chip has the risk of breakage failure,limiting in-depth research in this area.This work proposed a methodology to address this issue,enabling secure in-situ transmission electron microscopic observation of many devices and materials that would otherwise be difficult to achieve.Combining semi-custom TEM chip design and front-side protected release technology,a variety of nanodevices were successfully fabricated onto the window membrane of the TEM chip and studied in situ.Moreover,the pressure tolerance of window membrane was investigated and enhanced with a reinforcing structure.As an example of typical applications,MoS;devices on the TEM chip have been fabricated and electron beam-induced gate modulation and irradiation damage effects,have been demonstrated. 展开更多
关键词 in situ TEM TEM chip NANODEVICE membrane window NANOMATERIAL
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Tungsten oxide nanostructures:controllable growth and field emission
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作者 岳双林 许婷婷 +2 位作者 李伟 闫佶 一禾 《Journal of Semiconductors》 EI CAS CSCD 2012年第6期10-13,共4页
Non-fully oxidized tungsten oxide(WO_(3-x)) nanostructures with controllable morphology were fabricated by adjusting the gas pressure in chemical vapor deposition.The comparative field emission(FE) measurements ... Non-fully oxidized tungsten oxide(WO_(3-x)) nanostructures with controllable morphology were fabricated by adjusting the gas pressure in chemical vapor deposition.The comparative field emission(FE) measurements showed that the obtained W_(18)O_(49) nanowires have excellent FE property.The turn-on field was 7.1 V/μm for 10μA/cm^2 and the observed highest current density was 4.05 mA/cm^2 at a field of 17.2 V/μm.Good electron emission reproducibility was also observed during thermal evaporation and desorption testing. 展开更多
关键词 non-fully oxidized tungsten oxides field emission nanowire
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