Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supp...Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big challenge.In the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3) thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3) flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical calculations.Further,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3) and n‐type Ag_(2)Se thin films.Consequently,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 K.This work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting.展开更多
The substrate temperature(Ts)and N2 partial pressure(PN2)dependent optical and electrical properties of sputtered InGaZnON thin films are studied.With the increased Ts and PN2,the thin film becomes more crystallized a...The substrate temperature(Ts)and N2 partial pressure(PN2)dependent optical and electrical properties of sputtered InGaZnON thin films are studied.With the increased Ts and PN2,the thin film becomes more crystallized and nitrified.The Hall mobility,free carrier concentration(Ne),and electrical conductivity increase with the lowered interfacial potential barrier during crystal growing.The photoluminescence(PL)intensity decreases with the increased Ne.The band gap(Eg)narrows and the linear refractive index(n1)increases with the increasing concentration of N in the thin films.The Stokes shift between the PL peak and absorption edge decreases with Eg.The n1,dispersion energy,average oscillator wavelength,and oscillator length strength all increase with n1.The single oscillator energy decreases with n1.The nonlinear refractive index and third order optical susceptibility increase with n1.The Seebeck coefficient,electron effective mass,mean free path,scattering time,and plasma energy are all Ne dependent.展开更多
Sb_(2)Se_(3) with unique one-dimensional(1D) crystal structure exhibits exceptional deformation tolerance,demonstrating great application potential in flexible devices.However,the power conversion efficiency(PCE) of f...Sb_(2)Se_(3) with unique one-dimensional(1D) crystal structure exhibits exceptional deformation tolerance,demonstrating great application potential in flexible devices.However,the power conversion efficiency(PCE) of flexible Sb_(2)Se_(3) photovoltaic devices is temporarily limited by the complicated intrinsic defects and the undesirable contact interfaces.Herein,a high-quality Sb_(2)Se_(3) absorber layer with large crystal grains and benign [hkl] growth orientation can be first prepared on a Mo foil substrate.Then NaF intermediate layer is introduced between Mo and Sb_(2)Se_(3),which can further optimize the growth of Sb_(2)Se_(3)thin film.Moreover,positive Na ion diffusion enables it to dramatically lower barrier height at the back contact interface and passivate harmful defects at both bulk and heterojunction.As a result,the champion substrate structured Mo-foil/Mo/NaF/Sb_(2)Se_(3)/CdS/ITO/Ag flexible thin-film solar cell delivers an obviously higher efficiency of 8.03% and a record open-circuit voltage(V_(OC)) of 0.492 V.This flexible Sb_(2)Se_(3) device also exhibits excellent stability and flexibility to stand large bending radius and multiple bending times,as well as superior weak light photo-response with derived efficiency of 12.60%.This work presents an effective strategy to enhance the flexible Sb_(2)Se_(3) device performance and expand its potential photovoltaic applications.展开更多
Antimony selenide(Sb_(2)Se_(3))has recently made considerable photovoltaic,advancements in photoelectrochemical,and photodetector research scenarios,owing to its advantageous material merits and superior optoelectroni...Antimony selenide(Sb_(2)Se_(3))has recently made considerable photovoltaic,advancements in photoelectrochemical,and photodetector research scenarios,owing to its advantageous material merits and superior optoelectronic properties.By contrast,the exploration of flexible Sb_(2)Se_(3) photoelectric devices are less attempted,though it possesses unique one-dimensional(1D)crystal structure to enable large deformation tolerance.Here,we develop a flexible Sb2Ses thin-film photodetector on polyimide substrate.Thanks to the high-quality SbSes light absorber and benign interfaces at both back contact and heterojunction regions,the carrier dynamics are effectively optimized.The leading flexible Sb_(2)Se_(3) photodetector showcases self-powered and broadband features,with exceptional responsivity of 0.51 A·W^(-1) and realistic detectivity up to 1.32×10^(13) Jones,ultra-fast response speed of 49 ns/351 ns of rise and decay times,and remarkable mechanical deformation stability,flourishing the high-level development for flexible Sb_(2)Se_(3) photodetectors.Interestingly,a tunable single/dual-color flexible imaging system under band alignment modulation,along with a wearable and accurate heart rate/arterial blood oxygen saturation photoplethysmography detection system highlights the great application potential for flexible Sb,Ses photodetectors.展开更多
Bi_(2)Se_(3)-based flexible thin film with high thermoelectric performance is promising for the waste heat recovery technology.In this work,a novel post-selenization method is employed to prepare n-type Bi_(2)Se_(3)fl...Bi_(2)Se_(3)-based flexible thin film with high thermoelectric performance is promising for the waste heat recovery technology.In this work,a novel post-selenization method is employed to prepare n-type Bi_(2)Se_(3)flexible thin films with highly textured structure.The strengthened texture and Se vacancy optimization can be simultaneously achieved by optimizing the selenization temperature.The highly oriented texture leads to the increased carrier mobility and results in a high electric conductivity of~290.47 S·cm^(-1)at 623 K.Correspondingly,a high Seebeck coefficient(>110μW·K-1)is obtained due to the reduced carrier concentration,induced by optimizing vacancy engineering.Consequently,a high power factor of 3.49μW·cm^(-1)·K^(-2)at 623 K has been achieved in asprepared highly-bendable Bi_(2)Se_(3)flexible thin films selenized at 783 K.This study introduces an effective post-selenization method to tune the texture structure and vacancies of Bi_(2)Se_(3)flexible thin films,and correspondingly achieves high thermoelectric performance.展开更多
Thermoelectric generators have attracted a wide research interest owing to their ability to directly convert heat into electrical power.Moreover,the thermoelectric properties of traditional inorganic and organic mater...Thermoelectric generators have attracted a wide research interest owing to their ability to directly convert heat into electrical power.Moreover,the thermoelectric properties of traditional inorganic and organic materials have been significantly improved over the past few decades.Among these compounds,layered two-dimensional(2D)materials,such as graphene,black phosphorus,transition metal dichalcogenides,IVA–VIA compounds,and MXenes,have generated a large research attention as a group of potentially high-performance thermoelectric materials.Due to their unique electronic,mechanical,thermal,and optoelectronic properties,thermoelectric devices based on such materials can be applied in a variety of applications.Herein,a comprehensive review on the development of 2D materials for thermoelectric applications,as well as theoretical simulations and experimental preparation,is presented.In addition,nanodevice and new applications of 2D thermoelectric materials are also introduced.At last,current challenges are discussed and several prospects in this field are proposed.展开更多
Photoelectrochemical(PEC) cells involved with semiconductor electrodes can simultaneously absorb solar energy and perform chemical reactions, which are considered as an attractive strategy to produce renewable and cle...Photoelectrochemical(PEC) cells involved with semiconductor electrodes can simultaneously absorb solar energy and perform chemical reactions, which are considered as an attractive strategy to produce renewable and clean hydrogen energy. Sb_(2)Se_(3) has been widely investigated in constructing PEC photocathodes benefitting of its low toxicity, suitable band gap, superior optoelectronic properties, and outstanding photocorrosion stability. We first present a brief overview of basic concepts and principles of PEC water splitting as well as a comparison between Sb_(2)Se_(3) and other numerous candidates. Then the material characteristics and preparation methods of Sb_(2)Se_(3) are introduced. The development of Sb_(2)Se_(3)-based photocathodes in PEC water splitting with various architectures and engineering efforts(i.e., absorber engineering, interfaces engineering, co-catalyst engineering and tandem engineering) to improve solar-to-hydrogen(STH) efficiency are highlighted. Finally, we debate the possible future directions to further explore the researching fields of Sb_(2)Se_(3)-based photocathodes with a strongly positive outlook in PEC processed solar hydrogen production.展开更多
In recent years,Cu_(2)ZnSnS_(4)(CZTS)semiconductor materials have received intensive attention in the field of thin-film solar cells owing to its non-toxic and low-cost elements.In this work,double-pressure sputtering...In recent years,Cu_(2)ZnSnS_(4)(CZTS)semiconductor materials have received intensive attention in the field of thin-film solar cells owing to its non-toxic and low-cost elements.In this work,double-pressure sputtering technology is applied to obtain highly efficient and ultra-thin(-450 nm)pure Cu_(2)ZnSnS_(4)(CZTS)solar cell.Using mixed materials with sulfides and copper powder as a quaternary target via spark plasma sintering(SPS)method and adopting double-layer sputtering(high+low pressure),a highly adhesive and large-grained CZTS thin film is achieved.As a result,the damage to the surface of Mo contact is decreased so that the reflectivity of incident light can be improved.Moreover,the composition of CZTS film was more uniform and the secondary phase separation at the Mo interface was reduced.Therefore,the interface defect state and deep level defect density in corresponding device with double-pressure is reduced and the ratio of depletion thickness to absorption layer thickness can reached to 0.58,which promoted the collection of photogenerated carriers.Finally,an efficiency of 9.3%for ultra-thin(~450 nm)CZTS film solar cell is obtained.展开更多
Antimony selenide(Sb_(2)Se_(3))is a potential photovoltaic(PV)material for next-generation solar cells and has achieved great development in the last several years.The properties of Sb_(2)Se_(3)absorber and back conta...Antimony selenide(Sb_(2)Se_(3))is a potential photovoltaic(PV)material for next-generation solar cells and has achieved great development in the last several years.The properties of Sb_(2)Se_(3)absorber and back contact influence the PV performances of Sb_(2)Se_(3)solar cells.Hence,optimization of back contact characteristics and absorber orientation are crucial steps in raising the power conversion efficiency(PCE)of Sb_(2)Se_(3)solar cells.In this work,MoO2was introduced as an intermediate layer(IL)in Sb_(2)Se_(3)solar cells,and comparative investigations were conducted.The growth of(211)-oriented Sb_(2)Se_(3)with large grains was facilitated by introducing the MoO2IL with suitable thickness.The MoO2IL substantially lowered the back contact barrier and prevented the formation of voids at the back contact,which reduced the thickness of the MoSe2interface layer,inhibited carrier recombination,and minimized bulk and interfacial defects in devices.Subsequently,significant optimization enhanced the open-circuit voltage(VOC)of solar cells from 0.481 V to 0.487 V,short-circuit current density(JSC)from 23.81 m A/cm^(2)to 29.29 m A/cm^(2),and fill factor from 50.28%to 57.10%,which boosted the PCE from 5.75%to 8.14%.展开更多
Antimony selenide(Sb_(2)Se_(3))has drawn tremendous research attentions in recent years as an environment-friendly and cost-efficient photovoltaic material.However,the intrinsic low carrier density and electrical cond...Antimony selenide(Sb_(2)Se_(3))has drawn tremendous research attentions in recent years as an environment-friendly and cost-efficient photovoltaic material.However,the intrinsic low carrier density and electrical conductivity limited its scope of applications.In this work,an effective ion doping strategy was implemented to improve the electrical and photoelectrical performances of Sb_(2)Se_(3) thin films.The Sn-doped and I-doped Sb_(2)Se_(3) thin films with controllable chemical composition can be prepared by magnetron sputtering combined with post-selenization treatment based on homemade plasma sintered targets.As a result,the Sn-doped Sb_(2)Se_(3) thin film exhibited a great increase in carrier density by several orders of magnitude,by contrast,a less increase with one order of magnitude was achieved for the Idoped Sb_(2)Se_(3) thin film.Additionally,such cation or anion doping could simultaneously modify the conduction type of Sb_(2)Se_(3),enabling the first fabrication of a substrate structured Sb_(2)Se_(3)-based quasihomojunction thin film solar cell with configuration of Mo/Sb_(2)Se_(3)-Sn/Sb_(2)Se_(3)-I/ITO/Ag.The obtained power conversion efficiency exceeding 2%undoubtedly demonstrated its attractive photovoltaic application potential and further investigation necessity.展开更多
Al2O3/SiO2 multilayer high-reflective（HR） mirrors at 355 nm were prepared by electron beam evaporation, and post-irradiated with Ar/O mixture plasma. The surface defect density, reflective spectra, and laser-induced...Al2O3/SiO2 multilayer high-reflective（HR） mirrors at 355 nm were prepared by electron beam evaporation, and post-irradiated with Ar/O mixture plasma. The surface defect density, reflective spectra, and laser-induced damage characteristics were measured using optical microscopy, spectrophotometry, a damage testing system, and scanning electron microscopy（SEM）, respectively. The results indicated that moderate-time of irradiation enhanced the laser-induced damage threshold（LIDT） of the mirror, but prolonged irradiation produced surface defects, resulting in LIDT degradation. LIDT of the mirrors initially increased and subsequently decreased with the plasma processing time. SEM damage morphologies of the mirrors revealed that nanoscale absorbing defects in sub-layers was one of the key factors limiting the improvement of LIDT in 355 nm HR mirror.展开更多
Owing to the unique features,such as mechanically robust,low-toxic,high stability,and high thermoelectric performance,CoSb_(3)-based skutterudite materials are among art-of-the state thermoelectric candidates.In this ...Owing to the unique features,such as mechanically robust,low-toxic,high stability,and high thermoelectric performance,CoSb_(3)-based skutterudite materials are among art-of-the state thermoelectric candidates.In this work,we develop a facile in-situ method for the growth of well-crystallinity(Ag,Sn)co-doped CoSb_(3)thin films.This preparation method can efficiently control the dopant concentration and distribution in the thin films.Both the density functional theory calculation and the experimental results suggest that Sn and Ag dopants trend to enter the lattice and preferentially fill interstitial sites.Additionally,band structure calculation results suggest that the Fermi level moves into the conduction bands due to co-doping and eventually induces the increased electrical conductivity,which agrees with the optimization of carrier concentration.Moreover,an increase in the density of state after co-doping is responsible for the increased Seebeck coefficient.As a result,the power factors of(Ag,Sn)co-doped CoSb_(3)thin films are greatly enhanced,and the maximum power factor achieves over 0.3 m W m^(-1)K^(-2)at 623 K,which is almost two times than that of the un-doped CoSb_(3)film.Multiple microstructures,including Sb vacancies and Ag/Sn interstitial atoms as point defects,and a high density of lattice distortions coupled with nano-sized Ag-rich grains,lead to all scale phonon scatterings.As a result,a reduced thermal conductivity of~0.28 W m^(-1)K^(-1)and a maximum ZT of~0.52 at 623 K are obtained from(Ag,Sn)co-doped CoSb_(3)thin films.This study indicates our facile in-situ growth can be used to develop high-performance dual doped CoSb_(3)thins.展开更多
Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)has attracted considerable attention as a non-toxic and earthabundant solar cell material.During selenization of CZTSSe film at high temperature,the reaction between CZTSSe and Mo...Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)has attracted considerable attention as a non-toxic and earthabundant solar cell material.During selenization of CZTSSe film at high temperature,the reaction between CZTSSe and Mo is one of the main reasons that result in unfavorable absorber and interface quality,which leads to large open circuit voltage deficit(VOC-def)and low fill factor(FF).Herein,a WO_(3)intermediate layer introduced at the back interface can effectually inhibit the unfavorable interface reaction between absorber and back electrode in the preliminary selenization progress;thus high-quality crystals are obtained.Through this back interface engineering,the traditional problems of phase segregation,voids in the absorber and over thick Mo(S,Se)_(2)at the back interface can be well solved,which greatly lessens the recombination in the bulk and at the interface.The increased minority carrier diffusion length,decreased barrier height at back interface contact and reduced deep acceptor defects give rise to systematic improvement in VOCand FF,finally a 12.66%conversion efficiency for CZTSSe solar cell has been achieved.This work provides a simple way to fabricate highly efficient solar cells and promotes a deeper understanding of the function of intermediate layer at back interface in kesterite-based solar cells.展开更多
Thermoelectric thin film has attracted a lot of attention due to its potential in fabricating micropower generator in chip sensors for internet of things(IoT).However,the undeveloped performance of n-type thermoelectr...Thermoelectric thin film has attracted a lot of attention due to its potential in fabricating micropower generator in chip sensors for internet of things(IoT).However,the undeveloped performance of n-type thermoelectric thin film limits its widely application.In this work,a facile post-selenization diffusion reaction method is employed to introduce Se into Bi_(2)Te_(3)thin films,in order to optimize the carrier transport properties.Experimental and theoretical calculation results indicate that the carrier concentration decreases and density of states increases after Se doping,leading to the enhancement of Seebeck coefficient.Further,adjusting the diffusion reaction temperature can maintain the carrier concentration while increasing the mobility simultaneously,resulting in a high power factor of 1.5 mW/(m·K^(2)),which is eight times higher than that of the pristine Bi_(2)Te_(3)thin films.Subsequently,a thin film device fabricated by the present Se-doped Bi_(2)Te_(3)thin films shows the highest output power of 60.20 nW under the temperature difference of 37 K,indicating its potential for practical use.展开更多
Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)is a promising candidate for photodetector(PD)applications thanks to its excellent optoelectronic properties.In this work,a green solution-processed spin coating and selenization-...Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)is a promising candidate for photodetector(PD)applications thanks to its excellent optoelectronic properties.In this work,a green solution-processed spin coating and selenization-processed thermodynamic or kinetic growth of high-quality narrow bandgap kesterite CZTSSe thin film is developed.A self-powered CZTSSe/CdS thin-film PD is then successfully fabricated.Under optimization of light absorber and heterojunction interface,especially tailoring the defect and carrier kinetics,it can achieve broadband response from300 to 1300 nm,accompaniedwith a high responsivity of 1.37A/W,specific detectivity(D*)up to 4.0×10^(14)Jones under 5 nW/cm^(2),a linear dynamic range(LDR)of 126 dB,and a maximum Ilight/Idark ratio of 1.3×10^(8)within the LDR,and ultrafast response speed(rise/decay time of 16 ns/85 ns),representing the leading-level performance to date,which is superior to those of commercial andwell-researched photodiodes.Additionally,an imaging system with a 905nm laser is built for weak light response evaluation,and can respond to 718 pW weak light and infrared imaging at a wavelength as low as 5 nW/cm2.It has also been employed for photoplethysmography detection of pulsating signals at both the finger and wrist,presenting obvious arterial blood volume changes,demonstrating great application potential in broadband and weak light photodetection scenarios.展开更多
The complicated and diverse deep defects,voids,and grain boundary in the CZTSSe absorber are the main reasons for carrier recombination and efficiency degradation.The further improvement of the open-circuit voltage an...The complicated and diverse deep defects,voids,and grain boundary in the CZTSSe absorber are the main reasons for carrier recombination and efficiency degradation.The further improvement of the open-circuit voltage and fill factor so as to increase the efficiency of CZTSSe device is urgent.In this work,we obtained K-doped CZTSSe absorber by a simple solution method.The medium-sized K atoms,which combine the advantages of light and heavy alkali metals,are able to enter the grain interior as well as segregate at grain boundary.The K-Se liquid phase can improve the absorber crystallinity.We find that the accumulation of the wide bandgap compound K_(2)Sn_(2)S_(5)at grain boundary can increase the contact potential difference of grain boundary,form more effective hole barriers,and enhance the charge separation ability.At the same time,K doping passivates the interface as well as bulk defects and suppresses the non-radiative recombination.The improved crystallinity,enhanced charge transport capability and reduced defect density due to K doping result in a significant enhancement of the carrier lifetime,leading to 13.04%device efficiency.This study provides a new idea for simultaneous realization of grain boundary passivation and defect suppression in inorganic kesterite solar cells.展开更多
BiSe with intrinsic low thermal conductivity has considered as a promising thermoelectric(TE)material at nearly room temperature.To improve its low thermoelectric figure of merit(zT),in this work,Sb and Te isovalent c...BiSe with intrinsic low thermal conductivity has considered as a promising thermoelectric(TE)material at nearly room temperature.To improve its low thermoelectric figure of merit(zT),in this work,Sb and Te isovalent co-alloying was performed and significantly optimized its TE property with weakly anisotropic characteristic.After substituting Sb on Bi sites,the carrier concentration is suppressed by introduction of Sbsingle bond Se site defects,which contributes to the increased absolute value of Seebeck coefficient(|S|).Further co-alloying Te on Se of the optimized composition Bi_(0.7)Sb_(0.3)Se,the carrier concentration increased without affecting the|S|due to the enhanced effective mass,which leads to a highest power factor of 12.8μW/(cm·K^(2))at 423 K.As a result,a maximum zT of∼0.54 is achieved for Bi_(0.7)Sb_(0.3)Se_(0.7)Te_(0.3) along the pressing direction and the average zT(zTave)(from 300 K to 623 K)are drastically improved from 0.24 for pristine BiSe sample to 0.45.Moreover,an energy conversion efficiency∼4.0%is achieved for a single leg TE device of Bi_(0.7)Sb_(0.3)Se_(0.7)Te_(0.3)when applied the temperature difference of 339 K,indicating the potential TE application.展开更多
Developing high-efficiency materials with earth-abundant and low-toxicity elements has become a popular trend in the field of thermoelectrics.Among these compounds,oxides and sulfides,the lighter,cheaper and green ana...Developing high-efficiency materials with earth-abundant and low-toxicity elements has become a popular trend in the field of thermoelectrics.Among these compounds,oxides and sulfides,the lighter,cheaper and green analogies of tellurides,have been extensively investigated and summarized as well defined classes.Nonetheless,the vast family of selenides with better electrical performance,lower thermal conductivity and higher thermoelectric efficiency have not been specially discussed.Here in this review,we present recent advances in binary and multinary selenide thermoelectric materials,covering traditional PbSe,liquid-like Cu_(2)Se,layered SnSe,diamond-like and disordered multinary compounds.The features of selenides are discussed based on both environmental concerns and from the perspective of chemical bonding,transport properties and performance.Emphasis is put on the“compositionstructure-processing-performance”relationship,and some interesting issues are addressed.Finally,challenges for thermoelectric selenides are discussed,and possible optimization strategies are also suggested.展开更多
Antimony selenide(Sb_(2)Se_(3))is a promising candidate for photodetector applications boasting unique material benefits and remarkable optoelectronic properties.Achieving high-performance self-powered Sb_(2)Se_(3)pho...Antimony selenide(Sb_(2)Se_(3))is a promising candidate for photodetector applications boasting unique material benefits and remarkable optoelectronic properties.Achieving high-performance self-powered Sb_(2)Se_(3)photodetector through a synergistic regulation of absorber layer and heterojunction interface demonstrates great potential and needs essential investigation.In this study,an effective two-step thermodynamic/kinetic deposition technique containing sputtered and selenized Sb precursor is implemented to induce self-assembled growth of Sb_(2)Se_(3)light absorbing thin film with large crystal grains and desirable[hk1]orientation,presenting considerable thin-film photodetector performance.Furthermore,aluminum(Al^(3+))cation dopant is introduced to modify the optoelectronic properties of CdS buffer layer,and further optimize the Sb_(2)Se_(3)/CdS(Al)heterojunction interface quality.Thanks to the suppressed carrier recombination and enhanced carrier transport kinetics,the champion Mo/Sb_(2)Se_(3)/CdS(Al)/ITO/Ag photodetector exhibits self-powered and broadband characteristics,accompanied by simultaneously high responsivity of 0.9 A W^(-1)(at 11 nW cm^(-2)),linear dynamic range of 120 dB,impressive ON/OFF switching ratio over 10^(6)and signal-to-noise ratio of 10^(9),record total noise determined realistic detectivity of 4.78×10^(12)Jones,and ultra-fast response speed with rise/decay time of 24/75 ns,representing the top level for Sb_(2)Se_(3)-based photodetectors.This intriguing work opens up an avenue for its selfpowered broadband photodetector applications.展开更多
Bi_(2)O_(2)Se is considered one of the most promising thermoelectric(TE)materials for combining with p-type BiCuSeO in a TE module given its unique chemical and thermal stability.However,the enhancement of its dimensi...Bi_(2)O_(2)Se is considered one of the most promising thermoelectric(TE)materials for combining with p-type BiCuSeO in a TE module given its unique chemical and thermal stability.However,the enhancement of its dimensionless figure of merit,zT value,remains a challenge because of its low electrical conductivity.Herein,we introduce KCl into Bi_(2)O_(2)Se,synthesized by solid-state reaction and spark plasma sintering method,to improve its TE properties.The synthesized samples show an outstanding enhancement in electrical conductivity,carrier concentration,and power factor after KCl doping.The Bi_(2)O_(2)Se-based sample with a 0.05%KCl doping content possesses a high zT value of~0.58 at 773 K,which is over 50%enhancement compared with the pristine Bi_(2)O_(2)Se sample.We also prove that the K element substitutes the Bi site,and Cl replaces the Se site by X-ray diffraction results and density functional theory calculation,supporting that K can improve the electrical conductivity by the position of Fermi level which is above the conduction band minimum.Experimental and theoretical results indicate the success of co-doping with a small amount of KCl and show a huge potential of this novel method for Bi_(2)O_(2)Se TE performance improvement.展开更多
基金National Natural Science Foundation of China,Grant/Award Number:62274112Guangdong Basic and Applied Basic Research Foundation,Grant/Award Number:2022A1515010929Science and Technology Plan project of Shenzhen,Grant/Award Numbers:JCYJ20220531103601003,20220810154601001。
文摘Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big challenge.In the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3) thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3) flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical calculations.Further,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3) and n‐type Ag_(2)Se thin films.Consequently,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 K.This work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting.
基金Project supported by the National Natural Science Foundation of China(Grant No.61674107)Shenzhen Key Lab Fund,China(Grant No.ZDSYS20170228105421966)Science and Technology Plan of Shenzhen,China(Grant No.JCYJ20170302150335518)
文摘The substrate temperature(Ts)and N2 partial pressure(PN2)dependent optical and electrical properties of sputtered InGaZnON thin films are studied.With the increased Ts and PN2,the thin film becomes more crystallized and nitrified.The Hall mobility,free carrier concentration(Ne),and electrical conductivity increase with the lowered interfacial potential barrier during crystal growing.The photoluminescence(PL)intensity decreases with the increased Ne.The band gap(Eg)narrows and the linear refractive index(n1)increases with the increasing concentration of N in the thin films.The Stokes shift between the PL peak and absorption edge decreases with Eg.The n1,dispersion energy,average oscillator wavelength,and oscillator length strength all increase with n1.The single oscillator energy decreases with n1.The nonlinear refractive index and third order optical susceptibility increase with n1.The Seebeck coefficient,electron effective mass,mean free path,scattering time,and plasma energy are all Ne dependent.
基金supported by the National Natural Science Foundation of China(Grant Nos.62104156,62074102)the Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2023A1515011256,2022A1515010979)China+1 种基金Science and Technology plan project of Shenzhen(Grant Nos.20220808165025003,20200812000347001)Chinasupported by the open foundation of Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials,State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures,Guangxi University(Grant No.2022GXYSOF13)。
文摘Sb_(2)Se_(3) with unique one-dimensional(1D) crystal structure exhibits exceptional deformation tolerance,demonstrating great application potential in flexible devices.However,the power conversion efficiency(PCE) of flexible Sb_(2)Se_(3) photovoltaic devices is temporarily limited by the complicated intrinsic defects and the undesirable contact interfaces.Herein,a high-quality Sb_(2)Se_(3) absorber layer with large crystal grains and benign [hkl] growth orientation can be first prepared on a Mo foil substrate.Then NaF intermediate layer is introduced between Mo and Sb_(2)Se_(3),which can further optimize the growth of Sb_(2)Se_(3)thin film.Moreover,positive Na ion diffusion enables it to dramatically lower barrier height at the back contact interface and passivate harmful defects at both bulk and heterojunction.As a result,the champion substrate structured Mo-foil/Mo/NaF/Sb_(2)Se_(3)/CdS/ITO/Ag flexible thin-film solar cell delivers an obviously higher efficiency of 8.03% and a record open-circuit voltage(V_(OC)) of 0.492 V.This flexible Sb_(2)Se_(3) device also exhibits excellent stability and flexibility to stand large bending radius and multiple bending times,as well as superior weak light photo-response with derived efficiency of 12.60%.This work presents an effective strategy to enhance the flexible Sb_(2)Se_(3) device performance and expand its potential photovoltaic applications.
基金This work was supported by the National Natural Science Foundation of China(Nos.62104156,62074102,22275180,and 2019YFA0405600)Guangdong Basic and Applied Basic Research Foundation(Nos.2023A1515011256 and 2022A1515010979)ChinaShenzhen Science and Technology Program(No.GJHZ20240218113809019).
文摘Antimony selenide(Sb_(2)Se_(3))has recently made considerable photovoltaic,advancements in photoelectrochemical,and photodetector research scenarios,owing to its advantageous material merits and superior optoelectronic properties.By contrast,the exploration of flexible Sb_(2)Se_(3) photoelectric devices are less attempted,though it possesses unique one-dimensional(1D)crystal structure to enable large deformation tolerance.Here,we develop a flexible Sb2Ses thin-film photodetector on polyimide substrate.Thanks to the high-quality SbSes light absorber and benign interfaces at both back contact and heterojunction regions,the carrier dynamics are effectively optimized.The leading flexible Sb_(2)Se_(3) photodetector showcases self-powered and broadband features,with exceptional responsivity of 0.51 A·W^(-1) and realistic detectivity up to 1.32×10^(13) Jones,ultra-fast response speed of 49 ns/351 ns of rise and decay times,and remarkable mechanical deformation stability,flourishing the high-level development for flexible Sb_(2)Se_(3) photodetectors.Interestingly,a tunable single/dual-color flexible imaging system under band alignment modulation,along with a wearable and accurate heart rate/arterial blood oxygen saturation photoplethysmography detection system highlights the great application potential for flexible Sb,Ses photodetectors.
基金financially supported by the Natural Science Foundations of Shandong Province(No.ZR2023ME001)the China Postdoctoral Science Foundation(No.2023M732609)+1 种基金ShangRao City of Jiangxi Province(China)(No.2022A006)Doctoral Research Initiation Fund of Weifang University(No.2023BS01)。
文摘Bi_(2)Se_(3)-based flexible thin film with high thermoelectric performance is promising for the waste heat recovery technology.In this work,a novel post-selenization method is employed to prepare n-type Bi_(2)Se_(3)flexible thin films with highly textured structure.The strengthened texture and Se vacancy optimization can be simultaneously achieved by optimizing the selenization temperature.The highly oriented texture leads to the increased carrier mobility and results in a high electric conductivity of~290.47 S·cm^(-1)at 623 K.Correspondingly,a high Seebeck coefficient(>110μW·K-1)is obtained due to the reduced carrier concentration,induced by optimizing vacancy engineering.Consequently,a high power factor of 3.49μW·cm^(-1)·K^(-2)at 623 K has been achieved in asprepared highly-bendable Bi_(2)Se_(3)flexible thin films selenized at 783 K.This study introduces an effective post-selenization method to tune the texture structure and vacancies of Bi_(2)Se_(3)flexible thin films,and correspondingly achieves high thermoelectric performance.
基金supported by National Science Foundation for Young Scientists of China (No.61905161 and 51702219)the National Natural Science Foundation of China (No.61975134,61875138 and 61775147)+1 种基金the Science and Technology Innovation Commission of Shenzhen (No. JCYJ20180206121837007)the Shenzhen Nanshan District Pilotage Team Program (LHTD20170006)
文摘Thermoelectric generators have attracted a wide research interest owing to their ability to directly convert heat into electrical power.Moreover,the thermoelectric properties of traditional inorganic and organic materials have been significantly improved over the past few decades.Among these compounds,layered two-dimensional(2D)materials,such as graphene,black phosphorus,transition metal dichalcogenides,IVA–VIA compounds,and MXenes,have generated a large research attention as a group of potentially high-performance thermoelectric materials.Due to their unique electronic,mechanical,thermal,and optoelectronic properties,thermoelectric devices based on such materials can be applied in a variety of applications.Herein,a comprehensive review on the development of 2D materials for thermoelectric applications,as well as theoretical simulations and experimental preparation,is presented.In addition,nanodevice and new applications of 2D thermoelectric materials are also introduced.At last,current challenges are discussed and several prospects in this field are proposed.
基金supported by the National Natural Science Foundation of China(No.62074102)Natural Science Foundation of Guangdong Province(2020A1515010805)China+1 种基金the Key Project of Department of Education of Guangdong Province(No.2018KZDXM059)Chinathe Science and Technology plan project of Shenzhen(20200812000347001,JCYJ20190808153409238)China。
文摘Photoelectrochemical(PEC) cells involved with semiconductor electrodes can simultaneously absorb solar energy and perform chemical reactions, which are considered as an attractive strategy to produce renewable and clean hydrogen energy. Sb_(2)Se_(3) has been widely investigated in constructing PEC photocathodes benefitting of its low toxicity, suitable band gap, superior optoelectronic properties, and outstanding photocorrosion stability. We first present a brief overview of basic concepts and principles of PEC water splitting as well as a comparison between Sb_(2)Se_(3) and other numerous candidates. Then the material characteristics and preparation methods of Sb_(2)Se_(3) are introduced. The development of Sb_(2)Se_(3)-based photocathodes in PEC water splitting with various architectures and engineering efforts(i.e., absorber engineering, interfaces engineering, co-catalyst engineering and tandem engineering) to improve solar-to-hydrogen(STH) efficiency are highlighted. Finally, we debate the possible future directions to further explore the researching fields of Sb_(2)Se_(3)-based photocathodes with a strongly positive outlook in PEC processed solar hydrogen production.
基金supported by the National Key R&D Program of China(No.2018YFE0203400)the Science and Technology plan project of Shenzhen(JCYJ20190808120001755)+1 种基金the National Natural Science Foundation of China(No.62074102)the Key Project of Department of Education of Guangdong Province(No.2018KZDXM059)China。
文摘In recent years,Cu_(2)ZnSnS_(4)(CZTS)semiconductor materials have received intensive attention in the field of thin-film solar cells owing to its non-toxic and low-cost elements.In this work,double-pressure sputtering technology is applied to obtain highly efficient and ultra-thin(-450 nm)pure Cu_(2)ZnSnS_(4)(CZTS)solar cell.Using mixed materials with sulfides and copper powder as a quaternary target via spark plasma sintering(SPS)method and adopting double-layer sputtering(high+low pressure),a highly adhesive and large-grained CZTS thin film is achieved.As a result,the damage to the surface of Mo contact is decreased so that the reflectivity of incident light can be improved.Moreover,the composition of CZTS film was more uniform and the secondary phase separation at the Mo interface was reduced.Therefore,the interface defect state and deep level defect density in corresponding device with double-pressure is reduced and the ratio of depletion thickness to absorption layer thickness can reached to 0.58,which promoted the collection of photogenerated carriers.Finally,an efficiency of 9.3%for ultra-thin(~450 nm)CZTS film solar cell is obtained.
基金supported by the National Natural Science Foundation of China(62074102)the Guangdong Basic and Applied Basic Research Foundation(2022A1515010979)+1 种基金the Key Project of Department of Education of Guangdong Province(2018KZDXM059)the Science and Technology plan project of Shenzhen(20220808165025003)。
文摘Antimony selenide(Sb_(2)Se_(3))is a potential photovoltaic(PV)material for next-generation solar cells and has achieved great development in the last several years.The properties of Sb_(2)Se_(3)absorber and back contact influence the PV performances of Sb_(2)Se_(3)solar cells.Hence,optimization of back contact characteristics and absorber orientation are crucial steps in raising the power conversion efficiency(PCE)of Sb_(2)Se_(3)solar cells.In this work,MoO2was introduced as an intermediate layer(IL)in Sb_(2)Se_(3)solar cells,and comparative investigations were conducted.The growth of(211)-oriented Sb_(2)Se_(3)with large grains was facilitated by introducing the MoO2IL with suitable thickness.The MoO2IL substantially lowered the back contact barrier and prevented the formation of voids at the back contact,which reduced the thickness of the MoSe2interface layer,inhibited carrier recombination,and minimized bulk and interfacial defects in devices.Subsequently,significant optimization enhanced the open-circuit voltage(VOC)of solar cells from 0.481 V to 0.487 V,short-circuit current density(JSC)from 23.81 m A/cm^(2)to 29.29 m A/cm^(2),and fill factor from 50.28%to 57.10%,which boosted the PCE from 5.75%to 8.14%.
基金supported by Natural Science Foundation of Guangdong Province(2020A1515010805)ChinaNational Natural Science Foundation of China(No.62074102)+1 种基金Key Project of Department of Education of Guangdong Province(No.2018KZDXM059)ChinaScience and Technology plan project of Shenzhen(JCYJ20190808153409238)China.
文摘Antimony selenide(Sb_(2)Se_(3))has drawn tremendous research attentions in recent years as an environment-friendly and cost-efficient photovoltaic material.However,the intrinsic low carrier density and electrical conductivity limited its scope of applications.In this work,an effective ion doping strategy was implemented to improve the electrical and photoelectrical performances of Sb_(2)Se_(3) thin films.The Sn-doped and I-doped Sb_(2)Se_(3) thin films with controllable chemical composition can be prepared by magnetron sputtering combined with post-selenization treatment based on homemade plasma sintered targets.As a result,the Sn-doped Sb_(2)Se_(3) thin film exhibited a great increase in carrier density by several orders of magnitude,by contrast,a less increase with one order of magnitude was achieved for the Idoped Sb_(2)Se_(3) thin film.Additionally,such cation or anion doping could simultaneously modify the conduction type of Sb_(2)Se_(3),enabling the first fabrication of a substrate structured Sb_(2)Se_(3)-based quasihomojunction thin film solar cell with configuration of Mo/Sb_(2)Se_(3)-Sn/Sb_(2)Se_(3)-I/ITO/Ag.The obtained power conversion efficiency exceeding 2%undoubtedly demonstrated its attractive photovoltaic application potential and further investigation necessity.
基金Funded by the National Natural Science Foundation of China(No.11174208)the NSAF(No.U1430121)the Shenzhen Basic Research Project(Nos.JCYJ20150529164656098,ZDSY20170228105421966)
文摘Al2O3/SiO2 multilayer high-reflective（HR） mirrors at 355 nm were prepared by electron beam evaporation, and post-irradiated with Ar/O mixture plasma. The surface defect density, reflective spectra, and laser-induced damage characteristics were measured using optical microscopy, spectrophotometry, a damage testing system, and scanning electron microscopy（SEM）, respectively. The results indicated that moderate-time of irradiation enhanced the laser-induced damage threshold（LIDT） of the mirror, but prolonged irradiation produced surface defects, resulting in LIDT degradation. LIDT of the mirrors initially increased and subsequently decreased with the plasma processing time. SEM damage morphologies of the mirrors revealed that nanoscale absorbing defects in sub-layers was one of the key factors limiting the improvement of LIDT in 355 nm HR mirror.
基金supported by Guangdong Basic and Applied Basic Research Foundation(2020A1515010515 and 2019A1515110107)National Natural Science Foundation of China(11604212)Australian Research Council。
文摘Owing to the unique features,such as mechanically robust,low-toxic,high stability,and high thermoelectric performance,CoSb_(3)-based skutterudite materials are among art-of-the state thermoelectric candidates.In this work,we develop a facile in-situ method for the growth of well-crystallinity(Ag,Sn)co-doped CoSb_(3)thin films.This preparation method can efficiently control the dopant concentration and distribution in the thin films.Both the density functional theory calculation and the experimental results suggest that Sn and Ag dopants trend to enter the lattice and preferentially fill interstitial sites.Additionally,band structure calculation results suggest that the Fermi level moves into the conduction bands due to co-doping and eventually induces the increased electrical conductivity,which agrees with the optimization of carrier concentration.Moreover,an increase in the density of state after co-doping is responsible for the increased Seebeck coefficient.As a result,the power factors of(Ag,Sn)co-doped CoSb_(3)thin films are greatly enhanced,and the maximum power factor achieves over 0.3 m W m^(-1)K^(-2)at 623 K,which is almost two times than that of the un-doped CoSb_(3)film.Multiple microstructures,including Sb vacancies and Ag/Sn interstitial atoms as point defects,and a high density of lattice distortions coupled with nano-sized Ag-rich grains,lead to all scale phonon scatterings.As a result,a reduced thermal conductivity of~0.28 W m^(-1)K^(-1)and a maximum ZT of~0.52 at 623 K are obtained from(Ag,Sn)co-doped CoSb_(3)thin films.This study indicates our facile in-situ growth can be used to develop high-performance dual doped CoSb_(3)thins.
基金supported by the National Key R&D Program of China(no.2018YFE0203400)the National Natural Science Foundation of China(no.62074102)+1 种基金the Guangdong Basic and Applied Basic Research Foundation(no.2022A1515010979)the Science and Technology plan project of Shenzhen(nos.JCYJ20190808120001755 and 20220808165025003)。
文摘Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)has attracted considerable attention as a non-toxic and earthabundant solar cell material.During selenization of CZTSSe film at high temperature,the reaction between CZTSSe and Mo is one of the main reasons that result in unfavorable absorber and interface quality,which leads to large open circuit voltage deficit(VOC-def)and low fill factor(FF).Herein,a WO_(3)intermediate layer introduced at the back interface can effectually inhibit the unfavorable interface reaction between absorber and back electrode in the preliminary selenization progress;thus high-quality crystals are obtained.Through this back interface engineering,the traditional problems of phase segregation,voids in the absorber and over thick Mo(S,Se)_(2)at the back interface can be well solved,which greatly lessens the recombination in the bulk and at the interface.The increased minority carrier diffusion length,decreased barrier height at back interface contact and reduced deep acceptor defects give rise to systematic improvement in VOCand FF,finally a 12.66%conversion efficiency for CZTSSe solar cell has been achieved.This work provides a simple way to fabricate highly efficient solar cells and promotes a deeper understanding of the function of intermediate layer at back interface in kesterite-based solar cells.
基金the Technology Plan Project of Shenzhen(20220810154601001 and JCYJ20220531103601003)National Natural Science Foundation of China(No.62274112)Guangdong Basic and Applied Basic Research Foundation(2019A1515110107 and 2022A1515010929)。
文摘Thermoelectric thin film has attracted a lot of attention due to its potential in fabricating micropower generator in chip sensors for internet of things(IoT).However,the undeveloped performance of n-type thermoelectric thin film limits its widely application.In this work,a facile post-selenization diffusion reaction method is employed to introduce Se into Bi_(2)Te_(3)thin films,in order to optimize the carrier transport properties.Experimental and theoretical calculation results indicate that the carrier concentration decreases and density of states increases after Se doping,leading to the enhancement of Seebeck coefficient.Further,adjusting the diffusion reaction temperature can maintain the carrier concentration while increasing the mobility simultaneously,resulting in a high power factor of 1.5 mW/(m·K^(2)),which is eight times higher than that of the pristine Bi_(2)Te_(3)thin films.Subsequently,a thin film device fabricated by the present Se-doped Bi_(2)Te_(3)thin films shows the highest output power of 60.20 nW under the temperature difference of 37 K,indicating its potential for practical use.
基金National Natural Science Foundation of China,Grant/Award Numbers:62074102,62104156,21961160720Open Research Fund of Songshan Lake Materials Laboratory,Grant/Award Number:2021SLABFK02+1 种基金Guangdong Basic and Applied Basic Research Foundation,Grant/Award Numbers:2022A1515010979,2023A1515011256Science and Technology Plan Project of Shenzhen,Grant/Award。
文摘Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)is a promising candidate for photodetector(PD)applications thanks to its excellent optoelectronic properties.In this work,a green solution-processed spin coating and selenization-processed thermodynamic or kinetic growth of high-quality narrow bandgap kesterite CZTSSe thin film is developed.A self-powered CZTSSe/CdS thin-film PD is then successfully fabricated.Under optimization of light absorber and heterojunction interface,especially tailoring the defect and carrier kinetics,it can achieve broadband response from300 to 1300 nm,accompaniedwith a high responsivity of 1.37A/W,specific detectivity(D*)up to 4.0×10^(14)Jones under 5 nW/cm^(2),a linear dynamic range(LDR)of 126 dB,and a maximum Ilight/Idark ratio of 1.3×10^(8)within the LDR,and ultrafast response speed(rise/decay time of 16 ns/85 ns),representing the leading-level performance to date,which is superior to those of commercial andwell-researched photodiodes.Additionally,an imaging system with a 905nm laser is built for weak light response evaluation,and can respond to 718 pW weak light and infrared imaging at a wavelength as low as 5 nW/cm2.It has also been employed for photoplethysmography detection of pulsating signals at both the finger and wrist,presenting obvious arterial blood volume changes,demonstrating great application potential in broadband and weak light photodetection scenarios.
基金supported by the National Natural Science Foundation of China(No.62074102)Science and Technology Plan Project of Shenzhen(No.20220808165025003)China+1 种基金Science and Technology Project of Guizhou Province(No.QKHJCZK[2023]YB130)The Growth Plan for Young Science and Technology Talents of Guizhou Education Department(No.QJH KY[2017]223)。
文摘The complicated and diverse deep defects,voids,and grain boundary in the CZTSSe absorber are the main reasons for carrier recombination and efficiency degradation.The further improvement of the open-circuit voltage and fill factor so as to increase the efficiency of CZTSSe device is urgent.In this work,we obtained K-doped CZTSSe absorber by a simple solution method.The medium-sized K atoms,which combine the advantages of light and heavy alkali metals,are able to enter the grain interior as well as segregate at grain boundary.The K-Se liquid phase can improve the absorber crystallinity.We find that the accumulation of the wide bandgap compound K_(2)Sn_(2)S_(5)at grain boundary can increase the contact potential difference of grain boundary,form more effective hole barriers,and enhance the charge separation ability.At the same time,K doping passivates the interface as well as bulk defects and suppresses the non-radiative recombination.The improved crystallinity,enhanced charge transport capability and reduced defect density due to K doping result in a significant enhancement of the carrier lifetime,leading to 13.04%device efficiency.This study provides a new idea for simultaneous realization of grain boundary passivation and defect suppression in inorganic kesterite solar cells.
基金This work was supported by the National Natural Science Foundation of China(No.52372210 and No.52072248)Natural Science Foundation of Guangdong Province of China(No.2023A1515010122 and No.2021A1515012128)Technology plan project of Shenzhen(No.20220810154601001).
文摘BiSe with intrinsic low thermal conductivity has considered as a promising thermoelectric(TE)material at nearly room temperature.To improve its low thermoelectric figure of merit(zT),in this work,Sb and Te isovalent co-alloying was performed and significantly optimized its TE property with weakly anisotropic characteristic.After substituting Sb on Bi sites,the carrier concentration is suppressed by introduction of Sbsingle bond Se site defects,which contributes to the increased absolute value of Seebeck coefficient(|S|).Further co-alloying Te on Se of the optimized composition Bi_(0.7)Sb_(0.3)Se,the carrier concentration increased without affecting the|S|due to the enhanced effective mass,which leads to a highest power factor of 12.8μW/(cm·K^(2))at 423 K.As a result,a maximum zT of∼0.54 is achieved for Bi_(0.7)Sb_(0.3)Se_(0.7)Te_(0.3) along the pressing direction and the average zT(zTave)(from 300 K to 623 K)are drastically improved from 0.24 for pristine BiSe sample to 0.45.Moreover,an energy conversion efficiency∼4.0%is achieved for a single leg TE device of Bi_(0.7)Sb_(0.3)Se_(0.7)Te_(0.3)when applied the temperature difference of 339 K,indicating the potential TE application.
基金the Basic Science Center Project of NSFC(Grant No.51788104)the National Natural Science Foundation(No.11474176)as well as the Shenzhen Science and Technology Plan Project(No.JCYJ20150827165038323).
文摘Developing high-efficiency materials with earth-abundant and low-toxicity elements has become a popular trend in the field of thermoelectrics.Among these compounds,oxides and sulfides,the lighter,cheaper and green analogies of tellurides,have been extensively investigated and summarized as well defined classes.Nonetheless,the vast family of selenides with better electrical performance,lower thermal conductivity and higher thermoelectric efficiency have not been specially discussed.Here in this review,we present recent advances in binary and multinary selenide thermoelectric materials,covering traditional PbSe,liquid-like Cu_(2)Se,layered SnSe,diamond-like and disordered multinary compounds.The features of selenides are discussed based on both environmental concerns and from the perspective of chemical bonding,transport properties and performance.Emphasis is put on the“compositionstructure-processing-performance”relationship,and some interesting issues are addressed.Finally,challenges for thermoelectric selenides are discussed,and possible optimization strategies are also suggested.
基金supported by National Natural Science Foundation of China(No.62104156,62074102)Guangdong Basic and Applied Basic Research Foundation(2020A1515010805,2022A1515010979)China+1 种基金Science and Technology plan project of Shenzhen(20200812000347001,20220808165025003)Chinasupported by open foundation of Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials,Guangxi University(Grant No.2022GXYSOF13)。
文摘Antimony selenide(Sb_(2)Se_(3))is a promising candidate for photodetector applications boasting unique material benefits and remarkable optoelectronic properties.Achieving high-performance self-powered Sb_(2)Se_(3)photodetector through a synergistic regulation of absorber layer and heterojunction interface demonstrates great potential and needs essential investigation.In this study,an effective two-step thermodynamic/kinetic deposition technique containing sputtered and selenized Sb precursor is implemented to induce self-assembled growth of Sb_(2)Se_(3)light absorbing thin film with large crystal grains and desirable[hk1]orientation,presenting considerable thin-film photodetector performance.Furthermore,aluminum(Al^(3+))cation dopant is introduced to modify the optoelectronic properties of CdS buffer layer,and further optimize the Sb_(2)Se_(3)/CdS(Al)heterojunction interface quality.Thanks to the suppressed carrier recombination and enhanced carrier transport kinetics,the champion Mo/Sb_(2)Se_(3)/CdS(Al)/ITO/Ag photodetector exhibits self-powered and broadband characteristics,accompanied by simultaneously high responsivity of 0.9 A W^(-1)(at 11 nW cm^(-2)),linear dynamic range of 120 dB,impressive ON/OFF switching ratio over 10^(6)and signal-to-noise ratio of 10^(9),record total noise determined realistic detectivity of 4.78×10^(12)Jones,and ultra-fast response speed with rise/decay time of 24/75 ns,representing the top level for Sb_(2)Se_(3)-based photodetectors.This intriguing work opens up an avenue for its selfpowered broadband photodetector applications.
基金supported by the National Natural Science Foundation of China(No.62274112)the National Natural Science Foundation of Guangdong Province of China(Nos.2022A1515010929 and 2023A1515010122)+1 种基金the Science and Technology Plan Project of Shenzhen(No.JCYJ20220531103601003)In addition,the authors are thankful for the assistance on HAADF-STEM observation received from the Electron Microscope Center of Shenzhen University.
文摘Bi_(2)O_(2)Se is considered one of the most promising thermoelectric(TE)materials for combining with p-type BiCuSeO in a TE module given its unique chemical and thermal stability.However,the enhancement of its dimensionless figure of merit,zT value,remains a challenge because of its low electrical conductivity.Herein,we introduce KCl into Bi_(2)O_(2)Se,synthesized by solid-state reaction and spark plasma sintering method,to improve its TE properties.The synthesized samples show an outstanding enhancement in electrical conductivity,carrier concentration,and power factor after KCl doping.The Bi_(2)O_(2)Se-based sample with a 0.05%KCl doping content possesses a high zT value of~0.58 at 773 K,which is over 50%enhancement compared with the pristine Bi_(2)O_(2)Se sample.We also prove that the K element substitutes the Bi site,and Cl replaces the Se site by X-ray diffraction results and density functional theory calculation,supporting that K can improve the electrical conductivity by the position of Fermi level which is above the conduction band minimum.Experimental and theoretical results indicate the success of co-doping with a small amount of KCl and show a huge potential of this novel method for Bi_(2)O_(2)Se TE performance improvement.
