A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation...A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.展开更多
The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser(SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epit...The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser(SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epitaxial structure,grown on Te-doped(001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector(DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 μm wavelength operating near room temperature was achieved using a 3% output coupler.展开更多
A bilayer stacked InAs/GaAs quantum dot structure grown by molecular beam epitaxy on an In0.05Ga0.95As metamorphic buffer is investigated. By introducing a InGaAs：Sb cover layer on the upper InAs quantum dots （QDs）...A bilayer stacked InAs/GaAs quantum dot structure grown by molecular beam epitaxy on an In0.05Ga0.95As metamorphic buffer is investigated. By introducing a InGaAs：Sb cover layer on the upper InAs quantum dots （QDs） layers, the emission wavelength of the QDs is extended successfully to 1.533 μm at room temperature, and the density of the QDs is in the range of 4× 10^9-8 ×10^9cm^-2. Strong photoluminescence （PL） intensity with a full width at half maximum of 28.6meV of the PL spectrum shows good optical quality of the bilayer QDs. The growth of bilayer QDs on metamorphic buffers offers a useful way to extend the wavelengths of GaAs-based materials for potential applications in optoeleetronic and quantum functional devices.展开更多
We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500×10μm^2 ridge waveguide laser, the lazing wavelength is centred at 1.508...We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500×10μm^2 ridge waveguide laser, the lazing wavelength is centred at 1.508 μm and the threshold current density is 667 A/cm^2 under pulsed operation. The pulsed lasers can operate up to 286 K.展开更多
We theoretically investigate spin transport in the elliptical ring and the circular ring with Rashba spin-orbit interaction. It is shown that when Rashba spin-orbit interaction is relatively weak, a single circular ri...We theoretically investigate spin transport in the elliptical ring and the circular ring with Rashba spin-orbit interaction. It is shown that when Rashba spin-orbit interaction is relatively weak, a single circular ring can not realize spin flip, however an elliptical ring may work as a spin-inverter at this time, and the influence of the defect of the geometry is not obvious. Howerver if a giant Rashba spin-orbit interaction strength has been obtained, a circular ring can work as a spin-inverter with a high stability.展开更多
We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smoo...We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.展开更多
We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special t...We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. To identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. Our experiment reveals that some composition redistribution or other related ordering processes may occur in the quantum-well layer during annealing. Annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells.展开更多
In this work,we achieve high count-rate single-photon output in single-mode(SM)optical fiber.Epitaxial and dilute InAs/GaAs quantum dots(QDs)are embedded in a GaAs/AlGaAs distributed Bragg reflector(DBR)with a micro-p...In this work,we achieve high count-rate single-photon output in single-mode(SM)optical fiber.Epitaxial and dilute InAs/GaAs quantum dots(QDs)are embedded in a GaAs/AlGaAs distributed Bragg reflector(DBR)with a micro-pillar cavity,so as to improve their light emission extraction in the vertical direction,thereby enhancing the optical SM fiber’s collection capabil-ity(numerical aperture:0.13).By tuning the temperature precisely to make the quantum dot exciton emission resonant to the micro-pillar cavity mode(Q~1800),we achieve a fiber-output single-photon count rate as high as 4.73×10^(6) counts per second,with the second-order auto-correlation g2(0)remaining at 0.08.展开更多
The emerging hybrid integrated quantum photonics combines the advantages of different functional components into a single chip to meet the stringent requirements for quantum information processing.Despite the tremendo...The emerging hybrid integrated quantum photonics combines the advantages of different functional components into a single chip to meet the stringent requirements for quantum information processing.Despite the tremendous progress in hybrid integrations of III-V quantum emitters with silicon-based photonic circuits and superconducting single-photon detectors,on-chip optical excitations of quantum emitters via miniaturized lasers towards single-photon sources(SPSs)with low power consumptions,small device footprints,and excellent coherence properties is highly desirable yet illusive.In this work,we present realizations of bright semiconductor SPSs heterogeneously integrated with on-chip electrically-injected microlasers.Different from previous one-by-one transfer printing technique implemented in hybrid quantum dot(QD)photonic devices,multiple deterministically coupled QD-circular Bragg Grating(CBG)SPSs were integrated with electrically-injected micropillar lasers at one time via a potentially scalable transfer printing process assisted by the wide-field photoluminescence(PL)imaging technique.Optically pumped by electrically-injected microlasers,pure single photons are generated with a high-brightness of a count rate of 3.8 M/s and an extraction efficiency of 25.44%.Such a high-brightness is due to the enhancement by the cavity mode of the CBG,which is confirmed by a Purcell factor of 2.5.Our work provides a powerful tool for advancing hybrid integrated quantum photonics in general and boosts the developments for realizing highly-compact,energy-efficient and coherent SPSs in particular.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 60376025.
文摘A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.
基金supported by the Major Program of the National Natural Science Foundation of China(Grant Nos.61790581,61790582,and 61790584)the National Natural Science Foundation of China(Grant No.61435012)the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)
文摘The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser(SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epitaxial structure,grown on Te-doped(001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector(DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 μm wavelength operating near room temperature was achieved using a 3% output coupler.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60625405 and 10734060, and the National Basic Research Program of China under Grant No 2006CB921504.
文摘A bilayer stacked InAs/GaAs quantum dot structure grown by molecular beam epitaxy on an In0.05Ga0.95As metamorphic buffer is investigated. By introducing a InGaAs：Sb cover layer on the upper InAs quantum dots （QDs） layers, the emission wavelength of the QDs is extended successfully to 1.533 μm at room temperature, and the density of the QDs is in the range of 4× 10^9-8 ×10^9cm^-2. Strong photoluminescence （PL） intensity with a full width at half maximum of 28.6meV of the PL spectrum shows good optical quality of the bilayer QDs. The growth of bilayer QDs on metamorphic buffers offers a useful way to extend the wavelengths of GaAs-based materials for potential applications in optoeleetronic and quantum functional devices.
基金Supported partly by the National Natural Science Foundation of China under Grand Nos 60607016 and 60625405, the National Basic Research Programme of China and the National High Technology Research and Development Programme of China.
文摘We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500×10μm^2 ridge waveguide laser, the lazing wavelength is centred at 1.508 μm and the threshold current density is 667 A/cm^2 under pulsed operation. The pulsed lasers can operate up to 286 K.
基金Project supported by the National Natural Science Foundation of China(Grant No.11504016)
文摘We theoretically investigate spin transport in the elliptical ring and the circular ring with Rashba spin-orbit interaction. It is shown that when Rashba spin-orbit interaction is relatively weak, a single circular ring can not realize spin flip, however an elliptical ring may work as a spin-inverter at this time, and the influence of the defect of the geometry is not obvious. Howerver if a giant Rashba spin-orbit interaction strength has been obtained, a circular ring can work as a spin-inverter with a high stability.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60607016 and 60625405, and the National Basic Research Programme of China.
文摘We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.
基金Supported by the National Natural Science Foundation of China under Grant No 90201026, the National High Technology Research and Development Programme of China, the Special Funds for Major State Basic Research Project, and Post-doctoral Science Foundation of China.
文摘We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. To identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. Our experiment reveals that some composition redistribution or other related ordering processes may occur in the quantum-well layer during annealing. Annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells.
基金supported by the Key-Area Research and Development Program of Guangdong Province(Grant No.2018B030329001)the National Key Technologies R&D Program of China(2018YFA0306101)+2 种基金The Scientific Instrument Developing Project of the Chinese Academy of Science(YJKYYQ20170032)the National Natural Science Foundation of China(61505196)the Program of Beijing Academy of Quantum Information Sciences(Grant No.Y18G01).
文摘In this work,we achieve high count-rate single-photon output in single-mode(SM)optical fiber.Epitaxial and dilute InAs/GaAs quantum dots(QDs)are embedded in a GaAs/AlGaAs distributed Bragg reflector(DBR)with a micro-pillar cavity,so as to improve their light emission extraction in the vertical direction,thereby enhancing the optical SM fiber’s collection capabil-ity(numerical aperture:0.13).By tuning the temperature precisely to make the quantum dot exciton emission resonant to the micro-pillar cavity mode(Q~1800),we achieve a fiber-output single-photon count rate as high as 4.73×10^(6) counts per second,with the second-order auto-correlation g2(0)remaining at 0.08.
基金National Natural Science Foundation of China(62035017,12074442)National Key Research and Development Program of China(2018YFA0306103)+1 种基金Science and Technology Program of Guangzhou(202103030001)Hisilicon Technologies CO.,LIMITED and the national super-computer center in Guangzhou.
文摘The emerging hybrid integrated quantum photonics combines the advantages of different functional components into a single chip to meet the stringent requirements for quantum information processing.Despite the tremendous progress in hybrid integrations of III-V quantum emitters with silicon-based photonic circuits and superconducting single-photon detectors,on-chip optical excitations of quantum emitters via miniaturized lasers towards single-photon sources(SPSs)with low power consumptions,small device footprints,and excellent coherence properties is highly desirable yet illusive.In this work,we present realizations of bright semiconductor SPSs heterogeneously integrated with on-chip electrically-injected microlasers.Different from previous one-by-one transfer printing technique implemented in hybrid quantum dot(QD)photonic devices,multiple deterministically coupled QD-circular Bragg Grating(CBG)SPSs were integrated with electrically-injected micropillar lasers at one time via a potentially scalable transfer printing process assisted by the wide-field photoluminescence(PL)imaging technique.Optically pumped by electrically-injected microlasers,pure single photons are generated with a high-brightness of a count rate of 3.8 M/s and an extraction efficiency of 25.44%.Such a high-brightness is due to the enhancement by the cavity mode of the CBG,which is confirmed by a Purcell factor of 2.5.Our work provides a powerful tool for advancing hybrid integrated quantum photonics in general and boosts the developments for realizing highly-compact,energy-efficient and coherent SPSs in particular.
