Magnetoresistive random access memories(MRAMs)have drawn the attention of radiation researchers due to their potential high radiation tolerance.In particular,spin-orbit torque MRAM(SOT-MRAM)has the best performance on...Magnetoresistive random access memories(MRAMs)have drawn the attention of radiation researchers due to their potential high radiation tolerance.In particular,spin-orbit torque MRAM(SOT-MRAM)has the best performance on endurance and access speed,which is considered to be one of the candidates to replace SRAM for space application.However,little attention has been given to theγ-ray irradiation effect on the SOT-MRAM device yet.Here,we report the Co-60 irradiation results for both SOT(spin-orbit torque)magnetic films and SOT-Hall devices with the same stacks.The properties of magnetic films are not affected by radiation even with an accumulated dose up to 300 krad(Si)while the magnetoelectronic properties of SOTHall devices exhibit a reversible change behavior during the radiation.We propose a non-equilibrium anomalous Hall effect model to understand the phenomenon.Achieved results and proposed analysis in this work can be used for the material and structure design of memory cell in radiation-hardened SOT-MRAM.展开更多
We construct the Hall-bar device with the size of several hundred nanometers based on the HZO/Co multiferroic heterojunction. A remarkable voltage-controlled magnetism is observed in the device that possesses both fer...We construct the Hall-bar device with the size of several hundred nanometers based on the HZO/Co multiferroic heterojunction. A remarkable voltage-controlled magnetism is observed in the device that possesses both ferroelectric property and perpendicular magnetic anisotropy(PMA). The nucleation field and coercivity can be modulated by voltage pulse while saturation field keeps stable. The non-volatile and reversible voltage-controlled magnetism is ascribable to interfacial charges caused by ferroelectric polarization. Meanwhile, the effective anisotropy energy density(Ku) can also be controlled by voltage pulse, a decrease of 83% and increase of 28% in Kuare realized under-3-V and 3-V pulses,respectively. Because the energy barrier is directly proportional to Ku under a given volume, a decreased or enhanced energy barrier can be controlled by voltage pulse. Thus, it is an effective method to realize low-power and high-stability magneto-resistive random-access memory(MRAM).展开更多
基金This work is financially supported by Strategic Priority Research Program of the CAS(Grant No.XDA18000000)Youth Innovation Promotion Association of CAS(Grant No.2015097).
文摘Magnetoresistive random access memories(MRAMs)have drawn the attention of radiation researchers due to their potential high radiation tolerance.In particular,spin-orbit torque MRAM(SOT-MRAM)has the best performance on endurance and access speed,which is considered to be one of the candidates to replace SRAM for space application.However,little attention has been given to theγ-ray irradiation effect on the SOT-MRAM device yet.Here,we report the Co-60 irradiation results for both SOT(spin-orbit torque)magnetic films and SOT-Hall devices with the same stacks.The properties of magnetic films are not affected by radiation even with an accumulated dose up to 300 krad(Si)while the magnetoelectronic properties of SOTHall devices exhibit a reversible change behavior during the radiation.We propose a non-equilibrium anomalous Hall effect model to understand the phenomenon.Achieved results and proposed analysis in this work can be used for the material and structure design of memory cell in radiation-hardened SOT-MRAM.
基金supported by Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDA18000000)the Fund from the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2015097)Guangzhou City Research and Development Program in Key Fields (Grant No. 202103020001)。
文摘We construct the Hall-bar device with the size of several hundred nanometers based on the HZO/Co multiferroic heterojunction. A remarkable voltage-controlled magnetism is observed in the device that possesses both ferroelectric property and perpendicular magnetic anisotropy(PMA). The nucleation field and coercivity can be modulated by voltage pulse while saturation field keeps stable. The non-volatile and reversible voltage-controlled magnetism is ascribable to interfacial charges caused by ferroelectric polarization. Meanwhile, the effective anisotropy energy density(Ku) can also be controlled by voltage pulse, a decrease of 83% and increase of 28% in Kuare realized under-3-V and 3-V pulses,respectively. Because the energy barrier is directly proportional to Ku under a given volume, a decreased or enhanced energy barrier can be controlled by voltage pulse. Thus, it is an effective method to realize low-power and high-stability magneto-resistive random-access memory(MRAM).
